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Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Thanks to their considerable advantages, index modulation and orthogonal frequency division multiplexing (OFDM) are considered to be promising candidates for future wireless communications. This book focuses on the index modulation techniques for OFDM communications systems, which allow information to be conveyed not only via constellation symbols, but also by the indices of various transmission entities in OFDM systems, such as signal constellations, spreading codes, and pilots. The book discusses representative transmitter and receiver designs, optimization and performance analysis of index modulation based on various transmission entities. It first introduces readers to constellation-based index modulation via a combinatorial approach, including the classical index modulation scheme and two embodiments of information-guided precoding for OFDM systems. It further discusses constellation-based index modulation via a permutational approach, including the basic, generalized, and diversity-enhancing forms. It then describes how the spreading code is used to design an index modulated spread spectrum for OFDM systems, and the extensions to multi-code and multi-user scenarios. In addition it explores information guided pilot insertion for OFDM systems, followed by applications to carrier phase tracking and channel estimation. Lastly, the book highlights a number of open problems and discusses future research directions in the general field of index modulation. Intended for professionals and researchers in the field of wireless communications, this book is also a valuable resource for advanced-level electrical engineering and computer science students.

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.