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Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic.This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

Principles and Applications of ESR Spectroscopy fills the gap between the detailed monographs in ESR spectroscopy and the general textbooks in molecular physics, physical chemistry, biochemistry or spectroscopy. The latter only briefly explain the underlying theory and do not provide details about applications, while the currently available ESR textbooks are primarily focused on the technique as such. This text is based upon the authors'long experience of teaching the subject to a mixed audience, in the extreme case ranging from physics to biology. The potential of the method is illustrated with applications in fields such as molecular science, catalysis and environmental sciences, polymer and materials sciences, biochemistry and radiation chemistry/physics. Theoretical derivations have in general been omitted, as they have been presented repeatedly in previous works. The necessary theory is instead illustrated by practical examples from the literature.

Materials science is the prime example of an interdisciplinary science. It - compasses the?elds of physics, chemistry, material science, electrical en- neering, chemical engineering and other disciplines. Success has been o- standing. World-class accomplishments in materials have been recognized by NobelprizesinPhysicsandChemistryandgivenrisetoentirelynewtechno- gies. Materials science advances have underpinned the technology revolution that has driven societal changes for the last?fty years. Obviouslytheendisnotinsight!Futuretechnology-basedproblemsd- inatethecurrentscene.Highonthelistarecontrolandconservationofenergy and environment, water purity and availability, and propagating the inf- mation revolution. All fall in the technology domain. In every case proposed solutions begin with new forms of materials, materials processing or new arti?cial material structures. Scientists seek new forms of photovoltaics with greater e?ciency and lower cost. Water purity may be solved through surface control, which promises new desalination processes at lower energy and lower cost. Revolutionary concepts to extend the information revolution reside in controlling the “spin” of electrons or enabling quantum states as in quantum computing. Ion-beam experts make substantial contributions to all of these burgeoning sciences.

Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera…), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.

Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu, Japan, October 14 – 19, 2007