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This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Current concerns regarding greenhouse gas-related environmental effects, energy security, and the rising costs of fossil fuel-based energy has renewed interest in solar energy in general and photovotaics in particular. Exploring state-of-the-art developments from a practical point of view, Nanotechnology for Photovoltaics examines issues in increas

Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical and their technological aspects. Volume 29 consists of chapters pulled from Hari Singh Nalwa's forthcoming Handbook of Thin Film Materials (ISBN: 0-12-512908-4). The chapters were selected because they deal exclusively with amorphous film structures and because they have a common relevance to semiconductor, or electronic, devices and circuits. These are subjects not yet stressed in the Thin Films series.

Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial interfaces and on ways of reducing transition regions in films and film-type devices, on the processes of crystallization and recrystallization of amorphous films, and on thermodynamic conditions, mechanisms and kinetic parameters of accelerated crystallization.