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The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the 'magnetic' aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0-100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon. [ABSTRACT FROM AUTHOR]

Time resolved photoluminescence (TRPL) and transient absorption (TA) spectroscopy reveal an ultrafast charge transfer (CT) process, with an electron localization time constant 39±9 ps, between the ZnO host and the Cu dopants in Cu-doped ZnO nanowires. This CT process effectively competes with the ZnO band edge emission, resulting in the quenching of the ZnO UV emission. TRPL measurements show that the UV decay dynamics coincides with the buildup of the Cu-related green emission. TA measurements probing the state-filling of the band edge and defect states provide further support to the CT model where the bleaching dynamics concur with the TRPL lifetimes. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate the coexistence of nonvolatile memory (NVM) and volatile threshold switching (VTS) behaviors in an Ag-embedded sodium-alginate-based memristor using the current pulse mode. High and low compliance currents allow the device to present stable and reliable NVM and VTS behaviors, respectively. Specifically, NVM and VTS behaviors randomly occur under a compliance current of 40 μA. On this basis, four polygon Boolean operations (AND, OR, NOT, and XOR) and physical unclonable functions (PUFs) with an inter-class Hamming distance of 50.75% are demonstrated simultaneously in memristive devices. Adopting PUF keys, image encryption and decryption are implemented by executing the XOR logic operation. Our memristive devices have the ability of in-memory computing and providing PUFs simultaneously and thus great potential for hardware security applications. [ABSTRACT FROM AUTHOR]

Spin torque nano-oscillators (STNOs) hold significant promise for communication and bio-inspired computing applications. However, their modulation capability is constrained by a dilemma between frequency window and linewidth reduction, particularly in hypercritical conditions like the presence of an external magnetic field. This poses a notable challenge in the practical application of STNOs. Here, we report a unique type of all-electrical compact STNOs that employ the tilted magnetic anisotropy (TMA), which can efficiently promote the linewidth Δf reduction and precisely modulate oscillation frequency ranging from 495 to 556 MHz. The developed STNOs consist of a ferromagnetic reference layer with tunable TMA, wherein the spin transfer torque along the tilted spin polarization direction elaborates a self-oscillation of magnetic moments in the free layer without application of magnetic field. The free layer equips in a magnetic droplet oscillation mode, and the oscillation frequency can be modulated either synergistically or independently by varying the current intensity and/or the TMA angle. Nevertheless, the TMA angle primarily governs the deformation of the magnetic droplet and the corresponding oscillation frequency and linewidth. Moreover, a unique 4 × 4 STNO array with optimized input current and TMA configuration is proposed to execute the reservoir computing hardware training based on nonlinear dynamic oscillation phase-coupling characteristics, promising a diverse synchronization map with high kernel quality and low generation rank for highly reliable pattern classification implementation. The developed STNOs possess a simple structure, nonlinearity, high frequency tunability, and compatibility with CMOS processes, enabling them a fundamental component for large-scale integration of advanced hardware in neuromorphic computing. [ABSTRACT FROM AUTHOR]

A thermal-assisted electroforming (TAE) method is proposed to address the current overshoot issue and improve the resistive switching (RS) performance of electrochemical metallization (ECM) memory with a Cu/amorphous carbon (a-C)/Pt structure. In the initial electroforming process, thermal treatment can promote the electrochemical formation of metallic conductive filament (CF). The required electroforming voltage is reduced, and the undesirable overshoot current is suppressed. As a result, the RS performance of the cell is improved, including reduced RS parameter fluctuations, enlarged off/on ratio, and enhanced cycling endurance. The cell can be operated with a low compliance current (ICC) of 50 μA, which is among the lowest value of reported a-C-based ECM memories. Benefit from the low ICC, multilevel memory with five nonvolatile resistance states in a single cell is obtained. The main role of the TAE method is interpreted as to avoid the extreme high-temperature caused by the overshoot current. Conductive-atomic force microscopy mapping implies that the suppression of overshoot current can avoid over-injection of Cu cations into the a-C layer, facilitating CF with a simple structure and low randomness. The present work offers a feasible approach for addressing the current overshoot issue and improving the performance of ECM memory. [ABSTRACT FROM AUTHOR]