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InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations of InN QDs were examined by x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to the bulk InN, arising from size dependent quantum confinement effect. The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of InN QDs were studied in a metal-semiconductor-metal configuration in the temperature range of 80-300 K. The I-V characteristics of lateral grown InN QDs were explained by using the trap model. [ABSTRACT FROM AUTHOR]

We report the change in electronic properties of the Ga/Si interface by monitoring the Ga(3d) core-level photoelectron spectra and electron diffraction induced by submonolayer Ga adsorption on Si(111)-7×7 surface. The spectra shows a flat band for submonolayer coverages, attributed to the metallic nature of the Si(111)-7×7 reconstruction and a premetallic band structure of two-dimensional Ga islands. At 1 ML, electron diffraction pattern shows metallic (7×7) to semiconducting (1×1) phase-transition and the spin-orbit split branching ratio of Ga(2p) core level attain the metallic bulk value, and the barrier assumes the Schottky-Mott value while full width half maxima and branching ratio attain bulk values. [ABSTRACT FROM AUTHOR]

Write once read many times (WORM) memory devices based on the resistive switching mechanism of a sputtered amorphous BaTiO3 (am-BTO) thin film in a metal–insulator–metal structure is fabricated on a FTO coated glass substrate with a silver top contact. Fabricated devices show the switching from a low-conductance state to a high-conductance state with the formation of conductive filament(s) in the am-BTO layer. The memory characteristics are investigated as a function of thickness of am-BTO layer, which is determined by varying the deposition time. Devices with all deposited thicknesses show data retention for more than 4000 s and 300 reading cycle. Devices with 180 nm thickness show a high on-off ratio on the order of 106. The fabricated WORM devices exhibit good reading-endurance and data-retention characteristics. [ABSTRACT FROM AUTHOR]

We report on a high-performance NO2 sensor based on a one dimensional MoS2 nanowire (NW) network. The MoS2 NW network was synthesized using chemical transport reaction through controlled turbulent vapor flow. The crystal structure and surface morphology of MoS2 NWs were confirmed by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. Further, the sensing behavior of the nanowires was investigated at different temperatures for various concentrations of NO2 and the sensor exhibited about 2-fold enhanced sensitivity with a low detection limit of 4.6 ppb for NO2 at 60 °C compared to sensitivity at room temperature. Moreover, it showed a fast response (16 s) with complete recovery (172 s) at 60 °C, while sensitivity of the device was decreased at 120 °C. The efficient sensing with reliable selectivity toward NO2 of the nanowires is attributed to a combination of abundant active edge sites along with a large surface area and tuning of the potential barrier at the intersections of nanowires during adsorption/desorption of gas molecules. [ABSTRACT FROM AUTHOR]

The increased usage of hydrogen as a next generation clean fuel strongly demands the parallel development of room temperature and low power hydrogen sensors for their safety operation. In this work, we report strong evidence for preferential hydrogen adsorption at edge-sites in an edge oriented vertically aligned 3-D network of MoS2 flakes at room temperature. The vertically aligned edge-oriented MoS2 flakes were synthesised by a modified CVD process on a SiO2/Si substrate and confirmed by Scanning Electron Microscopy. Raman spectroscopy and PL spectroscopy reveal the signature of few-layer MoS2 flakes in the sample. The sensor's performance was tested from room temperature to 150 °C for 1% hydrogen concentration. The device shows a fast response of 14.3 s even at room temperature. The sensitivity of the device strongly depends on temperature and increases from ~1% to ~11% as temperature increases. A detail hydrogen sensing mechanism was proposed based on the preferential hydrogen adsorption at MoS2 edge sites. The proposed gas sensing mechanism was verified by depositing ~2-3 nm of ZnO on top of the MoS2 flakes that partially passivated the edge sites. We found a decrease in the relative response of MoS2-ZnO hybrid structures. This study provides a strong experimental evidence for the role of MoS2 edge-sites in the fast hydrogen sensing and a step closer towards room temperature, low power (0.3 mW), hydrogen sensor development. [ABSTRACT FROM AUTHOR]

In this work, we report enhanced power conversion efficiency (PCE) of bulk heterojunction polymer solar cells by Förster resonance energy transfer (FRET) from samarium-doped luminescent gadolinium orthovanadate (GdVO4:Sm3+) quantum dots (QDs) to polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7) polymer. The photoluminescence emission spectrum of GdVO4:Sm3+ QDs overlaps with the absorption spectrum of PTB7, leading to FRET from GdVO4:Sm3+ to PTB7, and significant enhancements in the charge-carrier density of excited and polaronic states of PTB7 are observed. This was confirmed by means of femtosecond transient absorption spectroscopy. The FRET from GdVO4:Sm3+ QDs to PTB7 led to a remarkable increase in the power conversion efficiency (PCE) of PTB7:GdVO4:Sm3+:PC71BM ([6,6]-phenyl-C71-butyric acid methyl ester) polymer solar cells. The PCE in optimized ternary blend PTB7:GdVO4:Sm3+:PC71BM (1:0.1:1.5) is increased to 8.8% from 7.2% in PTB7:PC71BM. This work demonstrates the potential of rare-earth based luminescent QDs in enhancing the PCE of polymer solar cells. [ABSTRACT FROM AUTHOR]

Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H2 sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (~21.6 s) and recovery times (~27 s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H2 sensor operates at low temperature (~70°C) unlike the existing high temperature (>150°C) sensors. [ABSTRACT FROM AUTHOR]

We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm-1 in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy. [ABSTRACT FROM AUTHOR]

The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si(100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p-Si(100) substrates. These dots were found to be single crystalline and grown along [001] direction. The junction between these two materials exhibits a strong rectifying behavior at low temperatures. The average barrier height (BH) was determined to be 0.7 eV from current-voltage-temperature, capacitance-voltage, and flat band considerations. The band offsets derived from built-in potential were found to be ΔEC=1.8 eV and ΔEV=1.3 eV and are in close agreement with Anderson's model. [ABSTRACT FROM AUTHOR]