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With the trend of electronic information technology towards miniaturization, integration and intelligence, higher requirements are put forward for the performance of dielectric ceramic materials. In this paper, a series of doped samples Sm 2 O 3 -xZnO (x = 0, 0.1, 0.2, 0.4, 0.6, 0.8) were successfully prepared by the traditional solid state reaction method, and the complex dielectric properties of the ceramic samples were investigated as a function of temperature (100 K–400 K) and frequency (102–106 Hz) separately. A new phase Zn 6.76 Sm 2.58 O 10.6 was found in all samples, and all samples were complex. At a higher temperature, 350 K, with the increase of ZnO doping content, the maximum dielectric constant is 434.7, the dielectric loss is as low as 0.0098, and the dielectric performance is significantly increased compared with room temperature. UV–Vis DRS test showed that the absorbance of the sample increased with the increase of ZnO content, and the side reaction showed that the dielectric constant and dielectric loss of the sample were improved under the action of UV light. These provide an experimental basis for the application of samarium based dielectric ceramics. [ABSTRACT FROM AUTHOR]