1. Electronic structure and transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films.
- Author
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Liang, Yuqi, Luo, Bingcheng, Dong, Huijuan, and Wang, Danyang
- Subjects
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THIN films , *ELECTRONIC structure , *ELECTRONIC band structure , *X-ray photoelectron spectroscopy , *BAND gaps - Abstract
High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr 0.2 Sn 0.2 Ti 0.2 Hf 0.2 Nb 0.2)O 3 thin films annealed at various temperatures. By means of X-ray photoelectron spectroscopy and absorption spectrum, it is found that the conduction-band-minimum shifts downward and the valence-band-maximum shifts upward with the increase of annealing temperature, leading to the narrowed band gap. Electrical resistance measurements confirmed a semiconductor-like behavior for all the thin films. Two charge transport mechanisms, i.e. , the thermally-activated transport mechanism at high temperatures and the activation-less transport mechanism at low temperatures, are identified by a self-consistent analysis method. These findings provide a critical insight into the electronic band structure and charge transport behavior of Ba(Zr 0.2 Sn 0.2 Ti 0.2 Hf 0.2 Nb 0.2)O 3 , validating it as a compelling high-entropy oxide material for future electronic/energy-related technologies. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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