1. Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior.
- Author
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Ambrogio, Stefano, Balatti, Simone, McCaffrey, Vincent, Wang, Daniel C., and Ielmini, Daniele
- Subjects
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NONVOLATILE random-access memory , *CURRENT fluctuations , *FLUCTUATIONS (Physics) , *BURST noise , *THREE-dimensional display systems , *FINITE element method - Abstract
Resistive-switching memory (RRAM) is attracting a widespread interest for its outstanding properties, such as low power, high speed, and good endurance. A crucial concern for RRAM is the current fluctuation, which induces significant broadening of resistance levels in single-bit and multilevel applications. This paper addresses low-frequency fluctuations focusing on $1/f$ and random telegraph noise contributions in intrinsic, i.e., typical, cells. The current fluctuations are studied in both the time and frequency domains, and the analytical models are presented to predict the resistance broadening for different RRAM states. Finally, the resistance dependence of noise and broadening is studied with the support of a 3-D finite-element model. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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