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This paper proposes a new high-gain soft-switching dc–dc topology based on a switched inductor boost converter (SIBC). A conventional SIBC as a high gain boost topology has the issues of high conduction loss in switching diodes and high switching loss in the main switches. Also, it has severe electromagnetic interference (EMI) issue due to high-frequency ringing formed by parasitic inductance and diode junction capacitors. The new topology is derived with the objective of achieving zero voltage switching (ZVS) turn on of the main switch. Instead of adding extra active clamp zero voltage transition (ZVT) path at the switching node, the proposed topology augments the auxiliary ZVT path to the switching diode path. This is achieved by replacing the switching diodes with synchronous switches. The new topology can achieve soft switching for all the switches and alleviate the EMI issue. All the diodes achieve zero current switching (ZCS) turn off without reverse recovery. Auxiliary switches have ZCS turn on and ZVS turn off, and the main switches have ZVS turn on. The soft-switching SIBC also reduces the conduction loss in the switching diodes. A numerical simulation in PLECS and a prototype hardware are built corresponding to a micro-inverter application with 100 kHz switching frequency. Peak power conversion efficiency of 94.76% is achieved in the hardware prototype with Si devices. [ABSTRACT FROM PUBLISHER]

Achieving high efficiency and high power density features of intermediate bus converter (IBC) in data center application is very critical. This paper proposes a nonisolated switched-tank dc–dc converter (STC) to meet the high requirement of IBC. The proposed STC has fixed voltage conversion ratio. Theoretical analysis provides the guideline for designing resonant tank and nonresonant tank as well as selecting proper deadtime for the proposed circuit. With resonant operation feature of the proposed circuit, zero current switching is realized on all switching devices to help the high-efficiency operation of the proposed converter. Through the proposed design methodology in this paper, power loss on switching devices and planar inductors can be minimized. In addition, detailed power loss analysis and breakdown provide hints for further efficiency improvement. Simulation has been performed to validate the operating principle of the proposed STC. A designed 6x STC (450 W nominal/600 W maximum) based on eGaNFETs is demonstrated. With 54 V typical input voltage, the output of the 6x STC is 9 V. The GaN-based prototype achieves a peak efficiency of 98.55%. Also, it achieves 97.18% efficiency and 750 W/in3 power density at 450 W. [ABSTRACT FROM AUTHOR]