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The bidirectional CLLC resonant converter has distinguished potential in battery chargers and energy storage systems for its advantages in soft switching and bidirectional power flow capability. However, traditional CLLC converters generally adopt symmetrical design to maintain bidirectional symmetrical characteristics, which means the secondary LC network is designed to be equal to the primary LC network after reflection. The symmetrical design is only suitable for voltage grade matching scenarios where a wide voltage range is not required, such as CLLC-type dc transformers. Whereas in the field of bidirectional chargers, due to the wide voltage range of battery, there are significant differences in the characteristics required between charging and discharging mode, which makes symmetrical design no longer applicable. To cope with this issue, this paper proposes a novel design methodology of CLLC based on parameter equivalent and time domain model. With the parameter equivalent principle, the CLLC resonant tank with arbitrary parameters is investigated to satisfy the requirements of wide voltage range for bidirectional charger application. Compared with the symmetrical design, the proposed method can meet the requirements of bidirectional gain within preset frequency range and guarantee the achievement of zero-voltage switching under required load conditions with the minimum reactive power. In addition, the area product capacity of the magnetic part of the CLLC resonant tank is minimized based on the parameter equivalent principle. Finally, experiments have been performed on a 1 kW prototype to confirm the validity and feasibility of the proposed design methodology. [ABSTRACT FROM AUTHOR]

The snubber circuit is a cost-effective solution to reduce the severe turn-off overvoltage and oscillation caused by the fast switching characteristics of SiC MOSFET. However, the turn-on switching losses will significantly increase as the snubber decouples the power loop parasitic inductance during the switching process. In this article, the effect of the power loop parasitic inductance on the switch performance of SiC MOSFETs and the quasi-zero voltage switching (QZVS) turn-on condition are studied. On this basis, an SiC MOSFET overvoltage and oscillation suppression circuit (OVSC) with not only the switching losses optimization feature but also the clamping energy feedback characteristic is proposed. The overvoltage and oscillation can be effectively suppressed by clamping capacitors, and those capacitors do not participate in the switching process until the overvoltage occurs, which is of benefit to the switching losses reduction compared with the other normal snubber circuits. Besides, the turn-off overvoltage and oscillation energy stored in the clamping capacitors can be feedback to dc and load side through a passive branch composed of an energy feedback inductor and a diode. The experimental studies and comprehensive comparison studies are carried out to verify the validity of the proposed OVSC. The experimental results show that OVSC has excellent overvoltage and oscillation suppression performance and can significantly reduce the switching losses. [ABSTRACT FROM AUTHOR]

The gallium nitride high electron mobility transistors (GaN HEMTs) are a superior candidate for the new-generation power electronics systems with higher efficiency and power density. However, due to the unique reverse characteristics, the reverse voltage drop of GaN HEMTs is much higher than that of diode. The deadtime loss in GaN-based bridge converters will be comparable to switching losses if the deadtime is not optimized. To optimize the deadtime for higher efficiency, this article proposes an accurate analytical model of GaN HEMTs, including circuit's parasitic inductances, the nonlinear capacitances, the unique reverse characteristics, etc. Taking a GaN-based synchronous buck converter as the example, the proposed model is realized, which fully uses the datasheet to avoid additional experiments. In order to accurately measure the switching current for validation, a novel parasitics-based current measurement method is proposed. The proposed model is verified by simulation in LTspice and experiment, and good agreement is shown. Based on the accurate analytical model, the deadtime is optimized for different load currents to improve the efficiency within the full load range. Compared with the fixed deadtime of 15 ns, the increase of efficiency can be up to 8%. This work will promote the high-frequency application of GaN HEMTs. [ABSTRACT FROM AUTHOR]

Current sense resistor (CSR) is widely used due to cost and integration considerations in industrial applications. However, when CSRs are used to sense transient currents caused by power device switching, especially fast-switching silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) with high di/dt, even a tiny parasitic inductance in CSRs bring a significant impact on its sensing performance. This article proposes a low-cost well-performance and easy-to-design current sensing circuit that uses the CSRs and an LR compensation network (LRCN) to compensate for the effect of parasitic inductance on transient current sensing. In order to support the parameter selection of the LR network, the effects of parameters such as parasitic capacitance, parasitic inductance, and loads on the performance of the proposed current sensing circuit are analyzed in detail. Meanwhile, a parasitic inductance measurement method that only needs passive probes is proposed to measure and calculate the parasitic inductance of CSRs. This circuit can not only sense the transient current on the printed circuit board level but also observe the transient current on the oscilloscope through a coaxial cable connection. Finally, experimental studies under an inductive load double pulse test setup with SiC mosfets are carried out to verify the validity and feasibility of the proposed transient current sensing circuit. Only a high self-resonant frequency inductor and a surface mounted device resistor are needed to form the LR network to fully compensate the effect of parasitic inductance on CSRs. [ABSTRACT FROM AUTHOR]

Compared with silicon insulated-gate bipolar transistor, silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (mosfet) presents good features that it clearly shows on its switching and thermal performance. However, the fast switching speed of SiC mosfet makes it much more difficult for solving the dynamic voltage imbalance problem caused by the parameter fluctuations of the SiC mosfets and drive circuits when they are connected in series. This article proposes an effective gate drive circuit and its dynamic voltage balancing control method to tackle this issue. The proposed method not only balances the dynamic voltage during high-speed switching but also adapts to the variation of the dc-bus voltage by utilization of overdrive control method (ODCM). Furthermore, to widen the control range of the ODCM, a switched-capacitor compensation method by switching and combining different drive capacitors into different values is proposed. The operation principles and the parameter design method are discussed in detail. The performance of the proposed series-connected SiC mosfets gate drive circuit and its dynamic voltage balancing control method is validated by experimental results. The dynamic voltage can be well balanced within the design range. [ABSTRACT FROM AUTHOR]

It is found out that using reverse coupled inductors could effectively improve power density and dynamic performance of multiphase interleaved point of load converters. Thus, it is of great significance to conduct a research about design and fabrication of ultrathin coupled inductors for system 3-D integration. The aim of this paper is to explore the structures, modeling, and fabrication of ultrathin coupled inductors based on low-temperature cofired ceramic (LTCC) technology. Four structures classified by shapes and relative positions of windings are introduced and compared. Simple but effective analytic models are set up to calculate self-inductance, leakage inductance, and coupling coefficient for quick design, and a design guideline is summarized according to the models. We made a 1.3-mm-thick LTCC coupled inductor and two competing coil coupled inductors, and compared their characteristics and performance. They are tested in a 12-V input and 1.2-V/40-A output two-phase interleaved buck converter at three different switching frequencies. Core loss and winding loss of the inductors are quantified by simulation. Compared with conventional coil coupled inductors, the LTCC coupled inductor has higher power density and light load efficiency. Besides, it could also help to improve the transient performance of converters for its higher coupling coefficient. [ABSTRACT FROM AUTHOR]

For bidirectional CLLC resonant converters, synchronous rectification (SR) is a key technique that can reduce the conduction losses in rectifying side by replacing the diodes with the switches’ channel. However, existing methods suffer from either complex hardware, or incomplete and imprecise control effect. Aiming at solving these problems, this article proposes a digital sensorless SR algorithm based on the time-domain model under a hybrid modulation for CLLC converters. The proposed approach can precisely enable the SR drive action within almost the whole load range and without any additional hardware, e.g., antiparallel diode, SR IC, and high bandwidth sensor. Its implementation only needs to measure dc signals (e.g., the output current), rather than any high-frequency resonant signals. Additionally, the presented algorithm can be easily implemented on a digital controller. Finally, experiments have been performed on a prototype to verify the validity and applicability of the presented SR algorithm. [ABSTRACT FROM AUTHOR]

Semiconductor devices based solid-state circuit breakers (SSCBs) are promising in the dc power distribution system as protective equipment for their ultrashort action time. This letter proposes a topology of SSCB using series connected silicon carbide (SiC) metal oxide semiconductor field effect transistors (mosfets), which only requires a single isolated gate driver. The SSCB has very low cost and high reliability because it only has 13 components including passive components and diodes apart from two SiC mosfets to achieve both balanced voltage distribution during short-circuit interruption duration and reliable positive gate voltage during on-state. The SSCB prototype is built and experimentally verified to interrupt 75 A short-circuit current under the dc-bus voltage of 1200 V within 1.5 μs. [ABSTRACT FROM AUTHOR]

This paper presents a new active gate drive (AGD) for switching performance improvement and overvoltage protection of high-power insulated gate bipolar transistors (IGBTs). In addition to the conventional gate drive (CGD) based on fixed voltage sources and fixed gate drive resistors, the proposed AGD has a complementary current source to provide extra gate drive current into the gate. Specific transient switching stages of the IGBT can be therefore accelerated, leading to higher switching speed and lower switching loss of the IGBT. Additionally, the turn-off voltage overshoot of the IGBT can be controlled at a preset reference value with a fast closed-loop overvoltage protection circuit. Moreover, the switching speed of the IGBT, including the turn-on/off delay times and the turn-on/off voltage slopes, can be effectively regulated with an adaptive switching speed control method. Accordingly, the gate drive is capable of operating the IGBT at specified delay times and fixed voltage slopes when varying the switching conditions (e.g., temperature, load current). The operation principle of the proposed AGD and control concept are presented. By comparing with the CGD, the proposed method is experimentally verified on a 3.3 kV/1.5 kA IGBT module in both double-pulse and multipulse tests. [ABSTRACT FROM PUBLISHER]

Distributed air-gap inductors have the advantage of reducing winding loss in high switching frequency dc/dc converters. However, they also have the disadvantage of uneven distribution of flux density, which inevitably leads to uncompleted utilization of magnetic material. This paper proposes a horizontal-winding multipermeability low-temperature cofired ceramic (LTCC) inductor to increase inductance and improve efficiency without the necessity of increasing inductor volume. For the purpose of simplicity, a two-permeability LTCC inductor is taken as an example for analysis and comparison. Design of such an inductor is demonstrated with the aid of 2-D finite elementary analysis simulation. A two-permeability LTCC inductor together with a single-permeability LTCC inductor is fabricated for measuring and testing. The measured results show the two-permeability inductor has higher inductance than the single-permeability inductor. Both inductors are tested in a 5-V input, 3.3-V output dc/dc converter to test their performances. The testing results show the two-permeability LTCC inductor could further improve the efficiency of high-frequency dc/dc converters compared with the single-permeability LTCC inductor. [ABSTRACT FROM AUTHOR]

Distributed air-gap inductors such as iron powder chip inductors and low-temperature cofired ceramic (LTCC) inductors have the advantage of low-fringing effect loss. However, the flux density nonuniformly distributes in the magnetic cores, which results in the magnetic material closer to the conductor becoming saturated while the magnetic material further away from the conductor is still not fully utilized. This paper proposes a multipermeability distributed air-gap inductor structure to increase inductance without the necessity of increasing the inductor volume. The best discrete permeability value is investigated. Based on the best discrete permeability value, inductance as well as the inductance density trends is calculated by varying the number of permeability layers under the condition that thickness for each layer is constant. Also, the inductance variations versus the number of permeability layers are also obtained under the condition that the inductor thickness is constant. A three-permeability inductor and a single-permeability inductor are fabricated to evaluate the proposed method. The measured results show that the three-permeability inductor has a much higher inductance than the single-permeability inductor for the entire load range. Both inductors are tested in a 5-V input, 3-V output dc/dc converter to compare their performances. The results show that the three-permeability inductor can further improve the efficiency of high-frequency dc/dc converters. [ABSTRACT FROM AUTHOR]

A high-efficiency high step-up dc–dc converter is proposed for renewable energy harvesting, where the sustainable power sources, such as PV panels and fuel cells, are characterized by low-voltage high-current output. The proposed converter employs the current-fed half-bridge structure to generate a square-wave current source. Then, a multiresonant tank is used to provide high voltage gain, absorb the parasitic parameters of the transformer, and create zero-current switching (ZCS) condition for all primary switches. By applying a single capacitor instead of LC for the output filter, the maximum voltage of the resonant capacitor is clamped to the output voltage, which reduces the circulating energy within the circuit and offers ZCS to the rectifying diodes. The operation principle is introduced and the steady-state analysis is also carried out for the derivation of the dc voltage gain and the ZCS conditions of the primary switches. The performance of the proposed converter was verified by a 150-W prototype. A peak efficiency of 95.2% was achieved by running the prototype at 255 kHz with 23-V input and 350-V output. [ABSTRACT FROM AUTHOR]