1. A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications.
- Author
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Lyu, Gang, Wang, Yuru, Wei, Jin, Zheng, Zheyang, Sun, Jiahui, Zhang, Long, and Chen, Kevin J.
- Subjects
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MODULATION-doped field-effect transistors , *GALLIUM nitride , *POWER transistors , *HYBRID power , *SILICON carbide , *THRESHOLD voltage - Abstract
A 1200-V/100-mΩ silicon carbide (SiC) junction field-effect-transistor (JFET)/ gallium nitride (GaN) high-electron-mobility-transistor (HEMT) hybrid power switch is demonstrated, which features a flip-chip copackaged cascode configuration incorporating a vertical SiC JFET and a lateral GaN-HEMT. The high-voltage SiC-JFET provides the high-voltage blocking capability while the low-voltage GaN-HEMT enables the normally-off gate control with superior switching characteristics. Compared to conventional SiC-JFET/Si-mosfet cascode devices, the SiC-JFET/GaN-HEMT cascode device exhibits fast switching speed, which has been validated by systematic characterizations including static/dynamic device-level measurements and board-level hard-switching tests. Meanwhile, the device is free from several notorious issues of high-voltage GaN power transistors such as dynamic on-state resistance degradation and threshold voltage shift. Such a wide-bandgap semiconductor-based hybrid switch is suitable to be deployed in high-power and high-efficiency power conversion systems. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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