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The magnetocrystalline anisotropy of La0.67Ba0.33MnO3 (LBMO) epitaxial films suffering large compressive strain on LaAlO3 (LAO) substrates (LBMO/LAO) was investigated by ferromagnetic resonance (FMR) in the temperature range between 2 and 320 K. By mapping out the dependence of the FMR position on the angle between the applied magnetic field and crystallographic axes of the films, a large easy-plane anisotropy has been found in such compressive strained LBMO films, which is in contrast to the general tendency presented in strained manganite films. Furthermore, the excellent epitaxial crystallographic orientation due to the LAO substrates gives rise to an appreciable fourfold symmetry of the in-plane anisotropy with easy-axis along the [110] direction. The results are discussed by taking tolerance factor and giant magnetostriction of Ba-doped manganites into account. [ABSTRACT FROM AUTHOR]

Epitaxial growth of CoSi[sub 2] by solid state reaction of Co/a-Si/Ti/Si(100) is investigated. A Ti/a-Si composite interlayer is used to modify the diffusion barrier and influence the epitaxial growth process. The epitaxial quality of the CoSi[sub 2] is improved compared to the film grown by Co/Ti/Si reaction. A multielement amorphous layer is formed by a solid-state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si while limiting the supply of Co atoms. CoSi[sub 2] grows as the first phase and the growth interface of the epitaxial CoSi[sub 2] is at both the CoSi[sub 2]/Si and CoSi[sub 2]/CoSi interfaces. Investigation of the growth kinetics shows that the activation energy of CoSi[sub 2] formation is larger than that without an amorphous Si layer. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]