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Glass with the composition of 50SiO 2 -25Na 2 O-10ZnO-10BaO-5Al 2 O 3 (in mol%) was used as the matrix for the growth of PbSe QDs. The viscosity-temperature relations of the glass were obtained through Vogel-Tammann-Fulcher equation. PbSe QDs were precipitated in this silicate glasses with the heat-treatment temperatures ( T H ) ranging from 490 to 540 °C for fixed duration of 10 h, corresponding to the glass-viscosity 10 11.2 –10 8.9 Pa·s. Meanwhile, the absorption peaks from PbSe QDs shifted from 872 nm to 2134 nm, and the PL peaks shifted from 1104 nm to 2185 nm. To study the PbSe QDs growth kinetics, the glasses were heat treated at 500, 520 and 540 °C for 1–20 h. Changes in diameter of PbSe QDs exhibited strong time dependencies (i.e. D ~ t 0.17 , T H = 520 °C), while the time dependencies were much smaller than that predicted by the classical Lifshitz-Slyozov-Wagner (LSW) theory (D ~ t 1/3 ) and the higher T H leads to the smaller growth exponent. [ABSTRACT FROM AUTHOR]

ZnSe and ZnS nanocrystals (NCs) were precipitated in glasses through heat-treatment. High resolution transmission electron microscope image confirmed that ZnSe NCs were formed in the silicate glasses, and the X-ray diffraction patterns confirmed that ZnS NCs were precipitated in the borosilicate glasses. Absorption shoulders of the ZnSe NCs and ZnS NCs appeared at ~ 2.76 eV and ~ 3.78 eV, corresponding to the bandgap energies of bulk ZnSe and ZnS crystals, respectively. Instead of the intrinsic emissions, broad-band visible photoluminescence from the surface defects or color centers in the glasses was observed from these ZnSe or ZnS NCs. [ABSTRACT FROM AUTHOR]

Abstract: Optical properties of PbS quantum dots (QDs) precipitated inside the oxide glass matrix were investigated. Photoluminescence (PL) from the PbS QDs showed peak wavelengths located at 1170–1680nm with widths of 150–550nm. Radii of QDs in glasses were 2.3–4.7nm depending upon the thermal treatment. Peak wavelengths of PL bands shifted as much as 70nm as the temperatures and excitation irradiances increased. Calculated effective local temperatures indicated that these shifts of PL spectra were associated with local heating induced by the temperatures and laser beam. [Copyright &y& Elsevier]

Abstract: CdSe quantum dots (QDs) were precipitated in silicate glasses under various durations and temperatures of heat-treatment. Absorption and photoluminescence (PL) spectra of the QDs showed the quantum confinement effect from CdSe QDs. When the glass was heat-treated for 10h, estimated average QD sizes increased from 5.2nm when the glass was heat-treated at 490°C and to 6.9nm when it was treated at 500°C. When the glass was heat-treated at 480°C, estimated average QD sizes were 4.9nm after 20h and 5.3nm after 30h. The PL peak position was independent of the excitation wavelengths; this result indicates that the size distribution of CdSe QDs was narrow. [ABSTRACT FROM AUTHOR]

• Adjusting optical performance of PbS QDs embedded glass to cover the whole telecommunication bands. • Revealing the absorption cross sections of PbS QDs at 1040 nm are 4–13 × 10−16 cm2, the bi- and tri-excitons lifetime is ∼60 and ∼10 ps. • Obtaining the broadband net gain in 1500–1620 nm in single PbS QDs embedded glass with a threshold of < N >=4.1. • Achieving a maximum gain time of ∼20 ps and gain coefficient of >120 cm−1 for PbS QDs embedded glass. Lead sulfide quantum dots (PbS QDs) have a unique performance in the near-infrared (NIR) range. In-situ precipitation of PbS QDs in glass not only improves the stability, but also is easy to be fabricated fiber compatible with silicon photonics. In this work, we reveal that absorption cross sections of PbS QDs at 1040 nm are 4–13 × 10−16 cm2, the bi- and tri-excitons lifetime are∼60 and ∼10 ps due to the trap-assisted Auger recombination using transient absorption (TA). Furthermore, we demonstrate the broadband net gain in 1500–1600 nm in single PbS QDs embedded glass with a gain threshold of < N >= 4.1 (averaged number of excitons), and achieve the maximum gain time of ∼20 ps and gain coefficient of >120 cm−1. These results illustrate the existing obstacles to achieve the net gain in PbS QDs embedded glass, which is important for applications on fiber amplifiers, NIR laser and high-capacity telecommunication. [ABSTRACT FROM AUTHOR]

Abstract: The size and spatial distribution of PbS QDs in glasses need to be controlled in order to achieve desired optical characteristics. This paper reports on the use of several rare-earth oxides such as Ho2O3, Er2O3, and La2O3 to control the size of PbS QDs in silicate glasses. Additions of rare-earth oxides result in blue shifts of the absorption bands from 1344nm to 930nm, and the wavelengths of PL bands can be controlled between 1421nm and 1035nm. Additions of up to 0.8mol% of Ho2O3 decreased the diameters of PbS QDs from 4.82nm to 3.02nm. The same tendencies were found for both Er2O3 and La2O3 additions, although the size of PbS QDs increased as the ionic radius of rare-earth ions increased. It is proposed that clusters of RE–O bonds act as nucleating agents for the precipitation of PbS QDs. [Copyright &y& Elsevier]

Lead chalcogenide quantum dots have particular optoelectronic properties induced by the quantum confinement effects and have promising potentials towards applications in infrared spectral range. Modulation of the optoelectronic properties of lead chalcogenide quantum dots is mainly based on the thermal treatment. In this work, precipitation and optical properties of alloyed PbSe x S 1-x quantum dots in glasses are investigated. Composition, size, absorption, and photoluminescence properties of PbSe x S 1-x quantum dots are modulated by chalcogen elements in glasses and thermal treatment. By adjusting the concentration of ZnSe and ZnS in the glasses, average diameters of the PbSe x S 1-x quantum dots are tuned in the range of 8.1–16.1 nm, their absorption peak wavelengths are tuned in the range of 724–2497 nm, and photoluminescence bands are tuned in the range of 1016–2165 nm with full width at half maximum in the range of 167–517 nm. Fraction of Se in the PbSe x S 1-x quantum dots precipitated in glasses is dependent on the concentrations of ZnSe and ZnS in the glass and heat-treatment temperature. Increase in concentration of S in the glasses results in the reduction of relative fraction of Se in the PbSe x S 1-x quantum dots formed in glasses. More importantly, high heat-treatment temperature promotes the enrichment of Se in PbSe x S 1-x quantum dots, and Se fraction in PbSe x S 1-x quantum dots increases from 0.69 to 0.89, from 0.53 to 0.85, from 0.47 to 0.79, and from 0.45 to 0.76 for those precipitated in glasses with ZnSe/(ZnSe+ZnS) molar ratios of 0.545, 0.375, 0.286, and 0.231, respectively. Increase in ZnSe/(ZnSe+ZnS) molar ratios in glasses also leads to reduction in diameter of PbSe x S 1-x quantum dots formed in glasses. These alloyed PbSe x S 1-x quantum dots also exhibit improved photoluminescence quantum yields and enhanced resistance to thermal quenching of photoluminescence. [Display omitted] [ABSTRACT FROM AUTHOR]

• Highly luminescent CsPbBr3 PQDs are successfully embedded in a stable tellurite glass host. The influence of structural changes on PL properties is studied. • The enhancement mechanisms related to the Ag doping and structural changes are revealed. • The PLQYs of CsPbBr3 are significantly enhanced to 33.9% in tellurite glasses. Highly luminescent CsPbBr 3 perovskite quantum dots (PQDs)-doped tellurite glasses are prepared by the cost-effective and reproducible melt-quenching and thermal heating method. The photoluminescence quantum yields (PLQYs) are significantly enhanced to 33.9% by glass structural modification and Ag doping. The enhancement mechanisms especially that related to the Ag doping are comprehensively discussed according to high-resolution transmission electron microscope analysis and the first-principles calculation for the first-time. The glass structure dependences of PL emissions are studied as a function of temperature from 78 K to 318 K. Based on the optimized glass sample, robust temperature-, irradiation- and high-current-resistant (up to the highest level of 300 mA yet reported) white light-emitting diode module is realized with an external quantum yield of 20%, a luminous efficiency of 65 lm/W, a correlated color temperature of 4063 K and a good color stability. [ABSTRACT FROM AUTHOR]