1. AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique.
- Author
-
Deng, Qiufang, Guo, Lu, Liang, Song, Sun, Siwei, Xie, Xiao, Zhu, Hongliang, and Wang, Wei
- Subjects
- *
ELECTROABSORPTION , *BANDWIDTHS , *OPTICAL modulators , *LIGHT transmission , *OPTICAL fibers - Abstract
AlGaInAs electroabsorption-modulated lasers (EMLs) fabricated by identical epitaxial layer technique are demonstrated. The EML device shows an infinite characteristic temperature when the temperature ranges from 20 o C to 30 o C. The integrated modulator has static extinction ratios of larger than 20 dB at a reverse bias voltage of − 2 V. The small signal modulation bandwidth of the modulator is larger than 11 GHz. At 10 Gb/s data modulation, the dynamic extinction ratio is about 9.5 dB in a back to back test configuration. Because only a simple fabrication procedure is needed, our EMLs are promising low cost light sources for optical fiber transmission applications. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF