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Temperature-dependent material attrition and subsurface lattice damage of single-crystal AlN at various scratching depths/forces are investigated at atomic level using molecular dynamics simulation. An ultimate removal precision of depth down to monolayer of AlN is achieved based on the present temperature-dependent critical conditions. The number of worn atoms, positively influenced by temperature due to the reduction of hardness, increases exponentially with increasing normal force in the plastic domain. Archard-type wear coefficient K values calculated at different temperatures increase linearly with normal force, and the slope is independent of temperature. Independently of load and temperature, a wear coefficient normalized with the tangential contact area, K / A tang , is developed to interpret the removal efficiency of AlN substrate with diamond abrasive. • Temperature-dependent plastic removal of AlN was elucidated at atomic level via MD simulation. • Increasing temperature can promote wear of GaN primarily due to the reduction of hardness. • Atomic layer removal of AlN is realized over a wide temperature range. • Temperature-independent wear coefficient increases linearly with normal load. • A normalized wear coefficient, K / A tang , is developed to interpret the removal efficiency of AlN with diamond abrasive. [ABSTRACT FROM AUTHOR]