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This work reports on direct crystallization of PbZr 0.53 Ti 0.47 O 3 (PZT) thin films on glass and polymeric substrates, using pulsed thermal processing (PTP). Specifically, xenon flash lamps deliver pulses of high intensity, short duration, broadband light to the surface of a chemical solution deposited thin film, resulting in the crystallization of the film. Structural analysis by X-ray diffraction (XRD) and transmission electron microscopy show the existence of perovskite structure in nano-sized grains (≤5 nm). Local functional analysis by band excitation piezoelectric spectroscopy and electrostatic force microscopy confirm the presence of a ferroelectric phase and retention of voltage-written polarization for multiple days. Based on structural and functional analyses, strategies are discussed for optimization of pulse voltage and duration for the realization of crystalline ferroelectric thin films. For ∼200 nm-thick PZT films on glass substrates, 500 μs-long pulses were required for crystallization, starting with 100 pulses at 350 V, 10 or 25 pulses at 400 V and in general lower number of pulses at higher voltages (resulting in higher radiant energy). Overall power densities of >6.4 kW/cm2 were needed for appearance of peaks corresponding to the perovskite phase in the XRD. Films on glass processed at 350–400 V had a higher degree of 111-oriented perovskite grains. Higher applied radiant energy (through increased pulse voltage or count) resulted in more random and/or partially 001-oriented films. For ∼1 μm-thick PZT films on polymeric substrates, 10 to 25 250 μs-long pulses at voltages ranging between 200 to 250 V, corresponding to power densities of ∼2.8 kW/cm2, were optimal for maximized perovskite phase crystallization, while avoiding substrate damage. [ABSTRACT FROM AUTHOR]

• Novel third-generation Ovonic memory materials have been synthesized. • Observed the significant electrical switching in thin-film samples. • Correlation between thermal stability and threshold switching voltage has been found. • Meyer-Neldel rule is observed in both d.c. conduction and resistive switching. The objective of the present research is to investigate the consequences of the incorporation of a small amount of Cd on the electrical switching behavior at high electric field 104 V/cm in Se 78-x Te 20 Sn 2 Cd x (x = 0, 2, 4, and 6) thin films. The thermal evaporation method has been utilized for thin-film deposition on a highly polished pyrographite substrate. The current-voltage (I-V) characteristics for the thin films of the examined samples exhibit a resistive switching of memory-type. The effect of ambient temperature and Cadmium content on the switching characteristics and voltage has been studied. The exponential decay in the observed average value of the switching voltage (V th) is found with the rise in temperature and Cd addition as well. An endeavor had been done to study the observed compositional dependence in terms of the thermal-induced glass transition temperature (T g), thermal stability, chemical bond approach, and lone-pair electrons (LP). On metal addition (Cd), the threshold voltage, glass transition temperature, and lone-pair electrons decrease while the chemical order network increases by the increase of the Cd-Se homopolar bonds. The switching phenomenon in amorphous Se 78-x Te 20 Sn 2 Cd x (0 ≤ x ≤ 6) thin films is elucidated according to an electro-thermal model based on the Joule-heating effect. [Display omitted] [ABSTRACT FROM AUTHOR]