Search

Abstract: Thermally evaporated ZnO thin films have been irradiated with 100MeV Au8+ ions at different fluence from 5×1011 ions/cm2 to 5×1013 ions/cm2. The optical and structural properties of the irradiated and pristine films were studied using Fourier transform infrared spectroscopy (FTIR), UV–visible absorption spectroscopy, photoluminescence (PL), atomic force microscopy (AFM) and XRD. FTIR results showed that for low fluence, the transmittance of the film decreased and increased again at higher fluence but Zn–O bond remains unaffected by irradiation. As revealed from the absorption spectra, absorption edge is not changed by the irradiation but the optical absorption is increased. The AFM study of the films implied that roughness decreased at low fluence values up to 5×1012 ions/cm2 and at higher fluences the roughness increased. [Copyright &y& Elsevier]

The control of polarization rotation (PR) is a key issue of applying undoped zinc oxide (ZnO) as information storage devices. A systematic study of ZnO thin films by conducting piezoresponse force microscopy (PFM) technique on samples with different electrodes, film thicknesses, and deposition oxygen partial pressures, P O 2 allows disclosing the possible factors those affecting the PR behavior. The results clearly indicate that higher work function conductive material, such as Pt, is a promising candidature as the top electrode and bottom electrode to ensure the PR occur and maintain in ZnO films. From the effects of film thickness study, PR behavior can be observed in film downscaled to 15 nm. However, in order to avoid current leakage and maintain the rotated polarization state, thicker film with about 240 nm is preferred. In addition, in the film deposited with a low P O 2 (>5 × 10−6 Torr), more atomic point defects such as oxygen vacancy may lead the sample into a large leakage current and deteriorate the PR behavior. Hence, by this systematic study, it is proved that the PR behavior of undoped ZnO thin films can be optimized with proper deposition parameters. Image 1 • Possible factors affecting the PR behavior are studied comprehensively. • Pt is a promising electrode candidature for PR behavior comparing with Au and ITO. • Unambiguous PR behavior is found in film with a thickness reduced to 15 nm. • P O 2 below 5 × 10−6 Torr might hinder the PR behavior. [ABSTRACT FROM AUTHOR]

Abstract: Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals. The deposited and annealed films were characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), uv–vis spectroscopy (UV–VIS) and photoluminescence (PL) measurements. FT-IR results of the films show the vibrational features of Si–O–Si and Zn–O bonds. UV–VIS spectra of the deposited film shows the band edge of ZnO. The XRD results of the films annealed at 750°C and 1000°C indicate the growth of ZnO nanocrystals with average crystallite sizes between 7nm and 26nm. PL measurements of the deposited film show a broad visible luminescence peak which can be due to ZnO. These results suggest the growth of ZnO nanocrystals in silica matrix. [Copyright &y& Elsevier]