1. Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator.
- Author
-
Wang Hui-Tao, Zhou Dai-Bing, Zhang Rui-Kang, Lu Dan, Zhao Ling-Juan, Zhu Hong-Liang, Wang Wei, and Ji Chen
- Subjects
- *
INDIUM gallium arsenide phosphide , *INDIUM phosphide , *QUANTUM wells , *QUANTUM confined Stark effect , *ELECTROABSORPTION , *FINITE element method - Abstract
We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f−3 dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF