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This paper deals with the analysis of TRIP steel HCT690 deformation behaviour. The mechanical properties and deformation characteristics of the tested material are determined using selected material tests and tests that consider the required stress states used to define the yield criterion boundary condition and subsequent deformation behaviour in the region of severe plastic deformation. The measured data are subsequently implemented in the numerical simulation of sheet metal forming, where they are used as input data for the computational process in the form of a selected material model defining the yield criterion boundary and, furthermore, the material hardening law during deformation of the material. The chosen numerical simulation process corresponds to the sheet metal forming process, including the subsequent spring-back of the material, when the force does not affect the material. Furthermore, the influence of the chosen computational model and selected process parameters on the deformation and spring-back process of the material is evaluated. In addition to that, at the end of the paper, the results from the numerical simulation are compared with experimentally produced sheet stamping. [ABSTRACT FROM AUTHOR]

Integrated optical isolators are important building blocks for photonic integrated chips. Despite significant advances in isolators integrated on silicon-on-insulator (SOI) platforms, integrated isolators on GaAs-on-insulator platforms are rarely reported. In this paper, two structural designs of optical isolators based on the TM basic mode of GaAs-on-insulator are proposed. The non-reciprocal phase shift (NRPS) of GaAs/Ce:YIG waveguides with different geometric structures are calculated using numerical simulation. The isolators achieve 35 dB isolation bandwidths greater than 53.5 nm and 70 nm at 1550 nm, with total insertion losses of 2.59 dB and 2.25 dB, respectively. A multi-mode interferometric (MMI) coupler suitable for these two structures is proposed. In addition, suitable manufacturing processes are discussed based on the simulated process tolerances. [ABSTRACT FROM AUTHOR]