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To address some of the challenges of asynchronous design, we propose a new, decomposable asynchronous logic block architecture based on our TH $x2$ programmable threshold cell, and we use it to implement common threshold functions found in asynchronous, null convention logic circuits. At a minimum, programmable gate arrays require a programmable logic cell that can implement a complete set of logic. It is well known that a NAND function forms a complete set of logic, and in null convention logic, the TH12 and TH22 threshold cells are used to form a basic two-input NAND function. The TH $x2$ threshold cell is capable of performing both TH12 and TH22 operations, so it too forms a complete set of logic. In this paper, we present our eight-transistor mask-programmable gate array logic cell, 16-transistor field-programmable gate array logic cell, and new decomposable field-programmable gate array logic block architecture, all based on the TH $x2$ threshold cell and suitable for implementing null convention logic asynchronous functions. To minimize the TH $x2$ threshold cell area for both TH12 and TH22 modes, we designed a layout with common Euler paths and no diffusion breaks for both modes. The highly compact nature of the TH $x2$ threshold cell–along with the symmetry of the mask- and field-programmable gate array logic cells–made it an ideal candidate for an asynchronous field-programmable logic block structure. This paper is part of an ongoing project, and it only addresses the programmable logic block architecture, not a complete FPGA fabric. [ABSTRACT FROM AUTHOR]

In this paper, we describe a design of a mixed-signal circuit for an binary neuron (a.k.a perceptron, threshold logic gate) and a methodology for automatically embedding such cells in ASICs. The binary neuron, referred to as an FTL (flash threshold logic) uses floating gate or flash transistors whose threshold voltages serve as a proxy for the weights of the neuron. Algorithms for mapping the weights to the flash transistor threshold voltages are presented. The threshold voltages are determined to maximize both the robustness of the cell and its speed. The performance, power, and area of a single FTL cell are shown to be significantly smaller (79.4%), consume less power (61.6%), and operate faster (40.3%) compared to conventional CMOS logic equivalents. Also included are the architecture and the algorithms to program the flash devices of an FTL. The FTL cells are implemented as standard cells, and are designed to allow commercial synthesis and P&R tools to automatically use them in synthesis of ASICs. Substantial reductions in area and power without sacrificing performance are demonstrated on several ASIC benchmarks by the automatic embedding of FTL cells. The paper also demonstrates how FTL cells can be used for fixing timing errors after fabrication [ABSTRACT FROM AUTHOR]

Field-Coupled Nanocomputing technologies have great potential to surpass CMOS technology because of their lower power consumption and higher device concentration. To ease the burden of placement and routing (P&R) problems for FCN circuits, many delicate two-dimensional clocking schemes have been proposed, upon which algorithms can solve the P&R problems more strategically. In this paper, we propose a two-level optimization strategy by using a genetic algorithm (GA) combined with an enhanced A* algorithm. Some circuit design requirements, such as clock synchronization, layout area, etc., are cleverly designed in the fitness value function of the GA. Numerical results demonstrate the effectiveness of the hybrid algorithm. In particular, compared to current tools, such as fiction and Ropper, the proposed algorithm can achieve an optimal solution with a higher success rate and a sizeable applicable circuit scale. In addition, the concept of design rule checking (DRC) was proposed in FCN and integrated into the algorithm, making the P&R results mapping from gate-level to cell-level more smoothly. Besides, the number of cross wires is significantly reduced, and the distribution of IO ports can be more effectively controlled. [ABSTRACT FROM AUTHOR]

The performance of nanoscale semiconductor technologies has become susceptible to high temperatures and aging phenomena. While guard-bands have conventionally been used to combat degradation-induced timing violations, approximations have recently been leveraged to compensate for degradations in lieu of adding timing guard-bands, without a loss in performance. However, only simple approximation techniques such as truncation have been considered in prior work. In this paper, a wide range of approximate arithmetic circuits including adders and multipliers using various sophisticated approximation techniques are investigated to cope with aging- and temperature-induced degradations. To this end, approximate circuits are first characterized for their delay increase under degradations. With this, we then determine the approximation level required to compensate for guard-bands under different degradations. Degradation-aware logic synthesis results show that the simple use of truncated arithmetic circuits leads to a higher quality loss compared to using other approximate circuits. However, a truncated multiplier has the lowest error distance towards a reliable operation in 10 years. The approximate multipliers with configurable error recovery are most suitable when the level of degradation is higher, e.g., at a temperature of 70 °C. The characterization of degradation at the circuit level is then used for design exploration at the architecture level without the need for further gate-level simulations. For three different image processing applications, experimental results show that guard-bands can be mitigated while maintaining an output result with a high visual quality. [ABSTRACT FROM AUTHOR]

Single-electron transistors (SETs) exhibit a unique characteristic of Coulomb oscillation which can find many digital applications with area efficiency. More specifically, both MOS and SET devices can be used to implement XOR gates with almost the same area costs regardless of the number of their inputs, outperforming pure CMOS solutions. As multiple-input XOR gates are abundant in the finite field polynomial multiplication which represents the most frequent computation in elliptic curve cryptosystem, hybrid SET-MOS technology can substantially reduce the area cost for this application. This paper presents polynomial multiplication architectures with hybrid SET-MOS transistors and explores Karatsuba-algorithm based multiplication for further area optimization. Simulations show that the proposed hybrid SET-MOS implementations can typically provide around 37% savings in terms of gate count compared to their traditional CMOS counterparts. [ABSTRACT FROM AUTHOR]

This paper presents a tunable new deadtime control circuit providing an optimal delay for power converter optimization. Our method can reduce the deadtime loss while improving the efficiency and power density of a given power converter. The circuit presents a reconfigurable delay element to generate a wide range of deadtime for different power conversion applications with varying loads and input voltages. The optimal deadtime equation for buck converters is derived, and its dependency on the input voltage and load is discussed. Experimental results show that the presented circuit can provide a wide range of deadtime delays, ranging from 9.2 ns to 1000 ns. The power consumption of the presented circuit is measured for different capacitive loads ($\text{C}_{\mathrm {L}}$) and operating frequencies (${f}_{\mathrm {s}}$). The circuit consumed a power between 610 $\mu \text{W}$ and $850~\mu \text{W}$ across the measured deadtime ranges while $\text{C}_{\mathrm {L}} =12$ pF, $\text{V}_{\mathrm {dd}} =3.3$ V, and $\text{f}_{\mathrm {s}}=200$ kHz. The proposed deadtime generator can operate up to 18 MHz when the minimum deadtime of 9.2 ns is selected. The presented circuit occupies an area of $150\mu $ m $\times 260\mu \text{m}$. The fabricated chip is connected to a buck converter to validate the operation of the proposed circuit. The efficiency of a typical buck converter with minimum $\text{T}_{\mathrm {DLH}}$ and optimal $\text{T}_{\mathrm {DHL}}$ at $\text{I}_{\mathrm {Load}} =25$ mA is improved by 12% compared to a converter with a fixed deadtime of $\text{T}_{\mathrm {DLH}} =\,\,\text{T}_{\mathrm {DHL}} =12$ ns. [ABSTRACT FROM AUTHOR]

A 3D architecture made up of a CMOS layer combined with a 3D stack of bipolar memristor crossbar arrays provides an innovative approach to hardware support for utilizing the strength of CMOS combined with the strength of memristors. Memristors have been evaluated for implementing a broad spectrum of applications such as memory, computations, hardware-based security primitives, cryptography, etc., and numerous studies have shown that memristors are desirable candidates for such applications. This paper proposes a novel 3D memristive crossbar architecture (i.e., a stack of memristive crossbar arrays built on top of CMOS substrate) with a specific focus on the way of connecting the crossbar arrays to the CMOS layer. The proposed architecture is configurable and allows restructuring crossbar arrays and creating 1D arrays with adjustable sizes. The proposed architecture enables parallel and pipeline computations where data can move or be processed in planes perpendicular to the stacked crossbar arrays. In addition, the proposed architecture is scalable meaning that stacks of crossbar arrays can be connected without additional overhead. This paper shows examples of implementing a full adder, a 4-bit look-ahead carry generator, and an 8-bit multiplexer. Simulations and area, delay, and power analysis demonstrate the behavior of the proposed 3D circuit. [ABSTRACT FROM AUTHOR]

By their very nature, Spin Waves (SWs) excited at the same frequency but different amplitudes, propagate through waveguides and interfere with each other at the expense of ultra-low energy consumption. In addition, all (part) of the SW energy can be moved from one waveguide to another by means of coupling effects. In this paper we make use of these SW features and introduce a novel non Boolean algebra based paradigm, which enables domain conversion free ultra-low energy consumption SW based computing. Subsequently, we leverage this computing paradigm by designing a non-binary spin wave adder, which we validate by means of micro-magnetic simulation. To get more inside on the proposed adder potential we assume a 2-bit adder implementation as discussion vehicle, evaluate its area, delay, and energy consumption, and compare it with conventional SW and 7 nm CMOS counterparts. The results indicate that our proposal diminishes the energy consumption by a factor of $3.14 \times $ and $6 \times $ , when compared with the conventional SW and 7 nm CMOS functionally equivalent designs, respectively. Furthermore, the proposed non-binary adder implementation requires the least number of devices, which indicates its potential for small chip real-estate realizations. [ABSTRACT FROM AUTHOR]

Stacked MOS power amplifiers (PA) are commonly used in SOI nodes but also have the potential to be realized in bulk CMOS nodes. In this paper they are analyzed in millimeter wave regimes. The study focuses on the key limiting factors and in particular the optimum number of transistors from which the key performance parameters such as maximum possible operating frequency, output power, and efficiency are achieved. Based on the analysis, design trade-offs of stacked MOS PAs are presented. The frequency dependency of the optimum load presented to each stack is analyzed to express the overall performance of the mentioned PA topologies as a new optimization method. Additionally, it is shown how the optimal load variations translate into amplitude-to-amplitude/phase (AM-AM/PM) conversion distortions. The validity of the analysis is examined against simulations. The simulations are performed based on 8M1P CMOS 28nm technology and electromagnetic simulations in ADS Momentum. [ABSTRACT FROM AUTHOR]

Recurrent Neural Networks (RNNs) have emerged as one of the most popular neural networks for processing time-series problems, widely used in machine translation, automatic speech recognition, and other natural language processing applications. However, conventional RNNs suffered from vanishing and exploding gradients, resulting in poor network performance in applications with long-term input information. As a variant of RNN, Long Short-Term Memory (LSTM) had been proposed to tackle this issue. Nevertheless, at the same time, LSTM introduces gating units and many additional parameters, which makes it challenging to be implemented directly on resource-limited platforms, such as Field Programmable Gate Arrays (FPGAs). This work first investigated the overall maximum achievable compression rates of different gating units and their correlations. Then, Gating Units Level Balanced Compression (GBC) strategy is proposed. After Top- $k$ pruning, the proposed GBC strategy can attain a compression rate of $36.6\times $ for LSTM. Further, the theoretical analysis indicates that for the existing gating units level LSTM compression variants, the GBC strategy still has further potential for compression. A complementary compression of the GBC strategy is performed on the existing coupled-gate LSTM to verify the analysis. Experimental results show that GBC achieves an additional $32\times $ (overall $42.7\times $) compression rate with negligible accuracy loss. Finally, hardware experiments conducted on Xilinx ADM-PCIE-7V3 FPGAs also demonstrate that the accelerator designed in this paper achieves an improvement of 7.4%-191.5% in energy efficiency compared to the state-of-the-art designs. [ABSTRACT FROM AUTHOR]

The search for a compatible application of memristor-CMOS logic gates has remained elusive, as the data density benefits are offset by slow switching speeds and resistive dissipation. Active microdisplays typically prioritize pixel density (and therefore resolution) over that of speed, where the most widely used refresh rates fall between 25–240 Hz. Therefore, memristor-CMOS logic is a promising fit for peripheral I/O logic in active matrix displays. In this paper, we design and implement a ternary 1–3 line decoder and a ternary 2–9 line decoder which are used to program a seven segment LED display. SPICE simulations are conducted in a 50-nm process, and the decoders are synthesized on an Altera Cyclone IV field-programmable gate array (FPGA) development board which implements a ternary memristor model designed in Quartus II. Our approach to logic synthesis demonstrates a potential way forward for simulating large-scale memristor-CMOS circuits without embedded RRAM for functional verification, and our SPICE results show an improvement in data density of a variety of decoders by a factor between 3.6-8.5. While the switching speed of memristors are one of several bottlenecks to using them in combinational logic, the comparatively slow refresh rates of typical microdisplays indicate this to be a tolerable trade-off, which promotes data density over speed. [ABSTRACT FROM AUTHOR]

The robustness of current and voltage references to process, voltage and temperature (PVT) variations is paramount to the operation of integrated circuits in real-world conditions. However, while recent voltage references can meet most of these requirements with a handful of transistors, current references remain rather complex, requiring significant design time and silicon area. In this paper, we present a family of simple current references consisting of a two-transistor (2T) ultra-low-power voltage reference, buffered onto a voltage-to-current converter by a single transistor. Two topologies are fabricated in a 0.18- $\mu \text{m}$ partially-depleted silicon-on-insulator (SOI) technology and measured over 10 dies. First, a 7T nA-range proportional-to-absolute-temperature (PTAT) reference intended for constant- $g_{m}$ biasing of subthreshold operational amplifiers demonstrates a 0.096-nA current with a line sensitivity (LS) of 1.48 %/V, a temperature coefficient (TC) of 0.75 %/°C, and a variability $(\sigma /\mu)$ of 1.66 %. Then, two 4T+1R $\mu \text{A}$ -range constant-with-temperature (CWT) references with (resp. without) TC calibration exhibit a 1.09- $\mu \text{A}$ (resp. 0.99- $\mu \text{A}$) current with a 0.21-%/V (resp. 0.20-%/V) LS, a 38-ppm/°C (resp. 290-ppm/°C) TC, and a 0.87-% (resp. 0.65-%) $(\sigma /\mu)$. In addition, portability to common scaled CMOS technologies, such as 65-nm bulk and 28-nm fully-depleted SOI, is discussed and validated through post-layout simulations. [ABSTRACT FROM AUTHOR]

The divider is one of the most complex hardware units in Stochastic Computing (SC); even though several new designs have been presented to reduce the computation latency of the conventional divider, all of them still require a considerable number of clock cycles. Moreover, they incur in low performance due to the employed arithmetic computational scheme. In this paper, a Delta Sigma Modulator (DSM) based stochastic divider is proposed. As an entirely digital circuit, the proposed divider offers the best computation latency and accuracy over all existing stochastic dividers found in the technical literature (with a typical reduction between 66.8% and 96.9% in the number of clock cycles and a reduction from $10^{\mathrm {-3.4}}$ to $10^{\mathrm {-3.9}}$ in the average mean square error for a 10-bit resolution). An SC-based Neural Network (NN) is considered as an initial case study to evaluate the advantages of the proposed design in an emerging application; results show that the proposed divider enables an SC-based NN to achieve a higher classification accuracy and hardware efficiency than existing designs. To show the flexibility of the proposed divider design, its application to Sobol-based sequences is also presented; also in this case, its superiority over other designs is confirmed. These features make the proposed design very attractive for hardware-constrained platforms; moreover, such a novel design approach that incorporates ideas from analog/mixed signal circuit design into a digital circuit design, can motivate other researchers to design efficient SC designs using similar schemes. [ABSTRACT FROM AUTHOR]

This paper presents two high-efficiency charge pumps (CPs) by utilizing the gate voltage boosting technique (GVBT). Unlike traditional bulk-CMOS and all-NMOS CPs, an input bias voltage is independently applied to the gate terminal, and it improves the current driving capability without the need of large pumping capacitors or high-frequency clocks. Meanwhile, the GVBT decouples the state of transistors from the clocks connected to the pumping capacitor, and it can eliminate the reversion loss in both main and auxiliary circuits. Fabricated in a 0.18- $\mu \text{m}$ standard CMOS technology, the single-stage all-NMOS CP achieved a maximum output voltage of 6.589 V and a peak power efficiency of 80.08%. We also implemented the bulk-CMOS CP with GBVT for comparison, the single-stage all-NMOS CP achieved $\sim 1.24\times $ more output voltage than the bulk-CMOS CP under a load current of 1.5 mA. The voltage errors of the all-NMOS CP between the analytical and the measured results are less than 7%. [ABSTRACT FROM AUTHOR]

This paper presents a series of multi-stage hybrid memristor-CMOS ternary combinational logic stages that are optimized for reducing silicon area occupation. Prior demonstrations of memristive logic are typically constrained to single-stage logic due to the variety of challenges that affect device performance. Noise accumulation across subsequent stages can be amortized by integrating ternary logic gates, thus enabling higher density data transmission, where more complex computation can take place within a smaller number of stages when compared to single-bit computation. We present the design of a ternary half adder, a ternary full adder, a ternary multiplier, and a ternary magnitude comparator. These designs are simulated in SPICE using the broadly accessible Knowm memristor model, and we perform experimental validation of individual stages using an in-house fabricated Si-doped HfOx memristor which exhibits low cycle-to-cycle variation, and thus contributes to robust long-term performance. We ultimately show an improvement in data density in each logic block of between $5.2\times - 17.3\times $ , which also accounts for intermediate voltage buffering to alleviate the memristive loading problem. [ABSTRACT FROM AUTHOR]

This paper presents the analysis and design of an oscillator-doubler architecture which is used to generate THz signals. In this architecture, the doubler obtains the optimum fundamental-frequency load impedance for second harmonic generation without causing problems related to instability. The oscillator creates voltages close to the optimum voltage condition, which leads to maximum power being delivered to the doubler connected to the oscillator tank. Compared to a signal generator composed of an oscillator and a conventional doubler with short-circuit load at the fundamental frequency, the proposed circuit has higher output power and DC-to-THz conversion efficiency. Based on this architecture, a 0.3-THz signal generator is designed in 40-nm CMOS. In this 0.3-THz signal generator, an inductor-sharing configuration is proposed to increase the transistor size in the cross-coupled oscillator, thus increasing the power density of the signal generator. Besides, the impact of the doubler fundamental-frequency load impedance on the conversion gain of the doubler is introduced. Also, a method of suppressing the unwanted mode in the cross-coupled oscillator is proposed. The output of this circuit is radiated through on-chip antennas. The measured radiated power and the DC-to-THz efficiency of the chip are -3.8 dBm and 0.37%, respectively, with an output frequency tuning range of 4.8%. [ABSTRACT FROM AUTHOR]

This paper presents a gate driver for a GaN-based half-bridge structure operating in a buck converter with input voltage >40 V or a boost converter with output voltage >30 V. Two 500 pF on-chip capacitors are utilized to construct three-level gate drivers, providing a near- $V_{{\text {DD}}}$ negative voltage for gate of the rectifier switch to eliminate the induced pulse on the gate from the high dv / dt slew rate of $V_{\text {X}}$ when the main switch is turned on. The dead time controller tunes the delay of the gate signal of the rectifier switch by sensing the slope of $V_{\text {X}}$ , thus the near-optimal zero-voltage switching can be achieved with deviation < 3 ns. The GaN driver is implemented with a 0.18- $\mu \text{m}$ BCD process. The efficiencies can be improved by 8.33% and 6.87% at light load in a buck and a boost converter due to the dead-time control. The peak efficiencies of 20 V–12 V and 12 V–18 V conversions are 86.37% and 84.39%, respectively. [ABSTRACT FROM AUTHOR]

Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named crossed-AND (C-AND), in which each storage cell consists of a single ferroelectric transistor. The write operation is performed using different write schemes and different absolute voltages, to account for the asymmetric switching voltages of the FeFET. It enables writing an entire wordline in two consecutive cycles and prevents current and power through the channel of the transistor. During the read operation, the current and power are mostly sensed at a single selected device in each column. The read scheme additionally enables reading an entire word without read errors, even along long bitlines. Our Simulations demonstrate that, in comparison to the previously proposed AND architecture, the C-AND architecture diminishes read errors, reduces write disturbs, enables the usage of longer bitlines, and saves up to 2.92X in memory cell area. [ABSTRACT FROM AUTHOR]

In the Mesochronous Pipeline (MP), the clock period is the maximal of differences between the maximum/minimum delays of all stages. This value is less than the maximum delay between the memory elements, so MP is operating faster than the conventional pipeline (CP). To take full advantages of MP, in this paper, Automated Mesochronous Pipeline Scheduler (AMPS) for high performance digital circuits, is proposed which provides all allowed partitioning options generated by register allocation procedures obtained with varying maximum delay differences of stages. This allows a designer to select from design space produced by AMPS based on the desired specification. Unlike the traditional MP, AMPS utilizes automated scripts to extract the timing characteristics of the synchronizers and gates. This enables a designer to explore trade-offs between latency, power, and frequency. To evaluate our toolset, an 8-bit Carry Increment Adder (CIA), a 4-bit Binary-Coded Decimal (BCD) adder, a 4-bit ALU, and a set of circuits from ISCAS85 and ISCAS89 benchmarks are considered. All circuit level simulations are performed in the 65nm CMOS standard technology node. AMPS improves the frequency for its best solutions about 127.94% (on average) in comparison to the conventional pipeline scheme. [ABSTRACT FROM AUTHOR]

This paper presents a discrete-time low-noise amplifier for miniaturized sensor nodes. Such amplifier achieves a noise efficiency factor of 1.01 and a power efficiency factor of 1.63, improving the noise efficiency of an analog front-end. The proposed preamplifier employs discrete-time parametric amplification by modulating the capacitance of a MOS varactor. The sampling noise is minimized by adopting a high oversampling ratio of the input voltage, leading to an input-referred noise of 520 nVrms in a 1 kHz bandwidth. Also, the power consumption is reduced by using a 34-phase stepwise charging technique. The multiphase soft-charging technique is implemented using multiple time-interleaved cells and allows to significantly reduce the current consumption without introducing any significant penalty in terms of additional noise or area occupation. A two-stage parametric amplifier is introduced to provide higher gain, and suppress the noise contribution of the following amplifier chain. The proposed two-stage complementary preamplifier is followed by a third continuous-time stage, that employs a current-reuse inverter-based architecture. The contribution to the total noise efficiency factor of such amplifier is attenuated by the gain of the previous two-stage parametric preamplifier. As a result, the third stage provides gain programmability, while degrading the NEF of the entire chain by less than 10%. [ABSTRACT FROM AUTHOR]

This paper investigates the metastability of true single-phase clock (TSPC) D flip flops (DFFs) and its impact on the resolution of Vernier time-to-digital converters (TDCs). The mechanisms of the metastability of TSPC DFFs are investigated and the analytical expressions of setup time and hold time are obtained. A shunt capacitor technique capable of reducing setup time and hold time to zero with no power and delay penalty is proposed. The impact of PVT (process, voltage, temperature) on the effectiveness of the proposed technique is quantified using simulation. Vernier TDCs, both right-shifting and left-shifting, with untuned and tuned DFFs are designed in TSMC 130 nm 1.2 V CMOS technology and analyzed using Spectre with BSIM3V3 device models. Simulation results demonstrate TDCs with tuned DFFs enjoy zero conversion error while the right-shifting and left-shifting TDCs with untuned DFFs have 1-bit and 5-bit conversion errors or 11% and 56% error rates, respectively. [ABSTRACT FROM AUTHOR]

In recent decades, the performance of binary computers has escalated through transistor scaling. However, due to the impotent forecasts of transistor scaling, ternary systems are regaining attention. Among many ternary device candidates, a passive device called memristor that is based on resistance switching is considered a good candidate when integrated with MOSFETs. Therefore, in this paper, we design various terna-ry logic based on memristors and MOSFETs from primitive logic to sequential logic and perform a thorough diagnosis for circuit design. We highlight design issues that should be resolved (e.g., signal distortion and high static current) and present practical solutions such as “Strength Design.” Then, we report a proper design methodology of sequential circuits considering the spike phenomena of memristor-based gates. We present 16 novel ternary logic cells and circuitry, including the design of the first balanced ternary full-adder (TFA) and memristor-based ternary pulsed-latch (MTPL). By our TFA, we emphasize that it is possible to design the most practical ternary circuits using memristors and MOSFETs. Our TFA uses 97 transistors and 87 memristors, which is the most reasonable TFA design that has the highest potential to be implemented in the near future. Besides, the proposed MTPL uses 16 transistors and 10 memristors, and it occupies only 72.7% of the silicon area, compared to the master-slave ternary flip-flop. [ABSTRACT FROM AUTHOR]

In this paper we propose a novel approach called Multi-Folded (MF) MOS Current Mode Logic (MCML) which can be applied to a generic MCML gate (i.e., with a fan-in higher than two). The idea is implemented by alternating NMOS and PMOS differential pairs and properly introducing current mirrors between the adjacent levels of logic. The proposed approach allows a minimum power supply equal to the one of a MCML inverter and we show analytically the advantages in terms of speed and power consumption against the conventional implementation. The approach has been validated with post-layout simulations considering a commercial 28nm FD-SOI CMOS technology and a supply voltage as low as 0.6V. In particular, OR/NOR gates with 3, 4, and 5 inputs implemented both with the conventional 2-inputs MCML gates implementation (Fin2) and the proposed MF MCML have been compared. Results show a reduction in the power consumption of the MF MCML equal to 3/4, 2/3 and 5/8 for the OR3, OR4 and OR5 logic functions respectively. Moreover, in terms of speed the Fin2 implementation has a delay at least 1.4 worst than the MF MCML, but is generally 1.7 worst than the proposed MF MCML gate. In this paper we have presented a novel approach which allows to implement MCML gates with a fan-in higher than 2 while keeping the minimum supply voltage as low as the one of a conventional MCML inverter. The proposed methodology, named Multi Folded MCML, born out by a generalization of the Folded MCML previously proposed by authors. The approach has been compared against the conventional Fin2 implementation (suited to implement arbitrarily logic function with a low power supply) both in terms of power consumption and propagation delay. The results have clearly demonstrated the advantages provided by the MF MCML. In particular, OR/NOR gates with 3-, 4-, and 5-inputs have been compared considering a commercial 28nm FD-SOI CMOS technology and a supply voltage as low as 0.6V. Post layout simulation results have shown that the MF gates outperform the conventional implementations in terms of propagation delay for all the considered logic functions. In particular, the propagation delay of the Fin2 implementation has been shown to be at least 1.4 times higher than the one of the MF MCML implementation and even 2 times higher for other logic functions. The power consumption of the MF gates has been shown to be 3/4, 2/3 and 5/8 than the one of the Fin2 implementations for the OR3, OR4 and OR5 logic functions respectively. Hence, the only drawback of the propose techniques seems due to a more complex design procedure. [ABSTRACT FROM AUTHOR]

Truncation is one of the most commonly used approaches for circuit-level approximate computing. This paper proposes a scheme for error compensation of arithmetic circuits in which a so-called padding is utilized to compensate at the output for the truncated bits of the input operands. Compensation relies on adjusting the output results of an arithmetic circuit; the padding takes a value determined by utilizing statistical information based on profiling an arithmetic circuit to reduce the average signed difference between the inexact and exact values and so the mean square error. An extensive analysis and simulation-based evaluation of error metrics are performed on signed truncated adders, multipliers and dividers; an excellent agreement is found. Additional design metrics such as power consumption and circuit complexity are also assessed. Different applications of approximate arithmetic circuits with the proposed output error compensation scheme are presented. Matrix multiplication and image processing (changing detection) are investigated to show the effectiveness of the scheme proposed in this paper. [ABSTRACT FROM AUTHOR]

This paper presents various techniques to achieve high efficiency for the bidirectional Cascaded-Buck-Boost converter. This converter has the features of low voltage across the switches and positive output voltage. The objective of this paper is to optimize the magnetics design to reduce the total losses in a low power non-isolated DC-DC circuit. A rigorous loss model with component nonlinearities is developed to determine the power loss distribution. It is validated by simulations and experiments. Based on the results of the power loss analysis and due to the low inductor profile and high efficiency target, nanocrystalline material will be the best candidate. Therefore, a new small volume low profile planar-nanocrystalline inductor is designed. Various deep de sign aspects for core and copper are discussed. The Finite-Element-Analysis (FEA) method is used to examine and visualize the inductor design. By implementing the planar-nanocrystalline inductor, a California Energy Commission (CEC) weighted efficiency of 99.05% for the buck mode and 98.98% for the boost mode are achieved with a peak efficiency of 99.24% and 99.21%, respectively. [ABSTRACT FROM AUTHOR]

Recently, integrating ferroelectric materials with nanotransistors such as carbon nanotube field-effect transistors (CNTFETs) has opened new doors for demonstrating a new generation of ultra-miniature circuits and systems. Utilizing the negative differential resistance effect in negative capacitance CNTFETs (NC-CNTFETs) has spurred the efforts for designing ultra-compact ternary circuits and systems similar to their binary structures. This paper presents an ultra-efficient ternary image edge detection hardware using NC-CNTFET technology. The proposed hardware is endowed with a noise reduction circuitry to mitigate the noise effects. Using four $1\times 3$ kernels and concatenating the image pixels, the proposed ternary hardware has been designed using only 50 transistors. The proposed ternary hardware at the circuit level shows, on average, 74% improvements regarding power delay-product (PDP) compared to the CNTFET-based counterparts. Our comprehensive simulations indicate that the proposed NC-CNTFET-based hardware shows a 40% improvement in data loss, 2.2 times improvement in performance ratio, and 1.14 times improvement in Pratt’s figure-of-merit, respectively, compared to the related designs. Our results accentuate that the proposed NC-CNTFET-based ternary hardware is a breakthrough achievement in demonstrating ultra-efficient and noise-immune ternary image processing circuits beyond the conventional binary counterparts. [ABSTRACT FROM AUTHOR]

The reduction of the nominal supply voltage of CMOS technologies with scaling comes with the decrease of the maximum tolerable voltage of the devices. This poses challenges in implementing circuit blocks that are compliant with standardized communication protocols or deal with off-chip signals in voltage domains larger than the nominal supply (e.g., 1.8 V, 3.3 V, 5 V). Design techniques such as cascoding, voltage shifting and adaptive biasing are effective at removing the need for customized voltage resistant input/output (I/O) devices since they prevent intolerable voltage drops. However, at the input of multiple-channel blocks, the design of switches of multiplexers results critical as the input and the output nodes can assume values beyond the signal range, causing harmful biasing configurations. This paper presents the architecture of a switch for input channel multiplexers able to handle signals up to twice the nominal supply voltage of the employed devices. Its effectiveness has been proved by implementing a 1.6V switch with the core MOS transistors of the 28nm CMOS technology with 0.96V nominal supply voltage. The comparison with a benchmark switch based on 1.8V I/O devices showed that both a larger area (slightly more than twice) and static current consumption ($40\mu \text{A}$) are required. [ABSTRACT FROM AUTHOR]

In this paper, we revisit Boole’s expansion theorem to propose a new synthesis method for implication logic circuits based on memristors. By rewriting the sum-of-products form of Boole’s expansion theorem in terms that are best suited for the implication logic, we develop a generalized rule to derive the sequence of operations needed to realize any logic function written in the classical AND-OR form. The proposed method leverages on multi-input operation, minimizing both the number of steps required to compute a given Boolean function and the number of memristors involved. Moreover, it allows using well-established methods of logic circuit optimization like binary decision diagrams, Karnaugh maps, and heuristic algorithms, that are already implemented in commercial CAD software. The proposed method allows a fair comparison between the performance of CMOS and implication logic implementations of the same logic function under the same degree of optimization, and is shown to outperform existing approaches. Possible device-circuit co-design strategies to optimize circuit performance are finally discussed. [ABSTRACT FROM AUTHOR]