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As a key component of high‐performance switches and routers, the packet forwarding engine (PFE) is mainly responsible for selecting the appropriate output port for tens of thousands of packets within an extremely short time frame. However, the performance of PFE is determined by the selected group membership algorithm. This paper puts forth a hybrid strategy–caching scalar‐pair and vectors routing and forwarding (CSVRF), consisting of virtual output port bitmap caching (VOPBC) and fractional‐N SVRF to address major multicast forwarding issues such as scalability by using content addressable memory. In CSVRF, a virtual output port bitmap cache is introduced, which includes the most popular combinations of output port bitmap and divides the big scalar‐pair into N sub‐groups to achieve parallel compute and the reusability of less bit‐length prime. The results demonstrate that the memory space and the forwarding latency are effectively reduced compared with previous work. In space efficiency, it only required 10% memory space compared with the original SVRF/fractional‐N SVRF, decreased 10% memory usage compared with pure VOPBC and nearly improved 1 to 4 orders of magnitude of packet processing time compared with the original SVRF and the fractional‐N SVRF respectively. [ABSTRACT FROM AUTHOR]

Spin-transfer torque magnetic RAM (STT-MRAM) is known as the most promising replacement for static random access memory (SRAM) technology in large last-level cache memories (LLC). Despite its high density, nonvolatility, near-zero leakage power, and immunity to radiation as the major advantages, STT-MRAM-based cache memory suffers from high error rates mainly due to retention failure (RF), read disturbance, and write failure. Existing studies are limited to estimate the rate of only one or two of these error types for STT-MRAM cache. However, the overall vulnerability of STT-MRAM caches, whose estimation is a must to design cost-efficient reliable caches, has not been studied previously. In this paper, we propose a system-level framework for reliability exploration and characterization of errors’ behavior in STT-MRAM caches. To this end, we formulate the cache vulnerability considering the intercorrelation of the error types including RF, read disturbance, and write failure as well as the dependency of error rates to workloads’ behavior and process variations (PVs). Our analysis reveals that STT-MRAM cache vulnerability is highly workload-dependent and varies by orders of magnitude in different cache access patterns. Our analytical study also shows that this vulnerability divergence significantly increases by PVs in STT-MRAM cells. To take the effects of system workloads and PVs into account, we implement the error types in gem5 full-system simulator. The experimental results using a comprehensive set of multiprogrammed workloads from SPEC CPU2006 benchmark suite on a quad-core processor show that the total error rate in a shared STT-MRAM LLC varies by 32.0× for different workloads. A further 6.5× vulnerability variation is observed when considering PVs in the STT-MRAM cells. In addition, the contribution of each error type in total LLC vulnerability highly varies in different cache access patterns and moreover, error rates are differently affected by PVs. The proposed analytical and empirical studies can significantly help system architects for efficient utilization of error mitigation techniques and designing highly reliable and low-cost STT-MRAM LLCs. [ABSTRACT FROM AUTHOR]

As the speed gap of the modern processor and the off-chip main memory enlarges, on-chip cache capacity increases to sustain the performance scaling. As a result, the cache power occupies a large portion of the total power budget. Spin transfer torque magnetic memory (STT-MRAM) is proposed as a promising solution for the low power cache design due to its high integration density and ultralow leakage power. Nevertheless, the high write power and latency of STT-MRAM become new barriers for the commercialization of this emerging technology. In this paper, we investigate the thermal effect on the access performance of STT-MRAM, and observe that the temperature can affect the write delay and energy significantly. Then, we explore the nonuniform cache access (NUCA) design of the chip-multiprocessors with STT-MRAM-based last level cache (LLC). A thermal aware data migration policy, called “Thermosiphon,” which takes advantage of the thermal property of STT-MRAM, is proposed to reduce the LLC write energy. This policy splits the LLC into different regions dynamically based on the thermal distribution monitored by thermal sensors available on-chip, and adaptively migrates write intensive data among different thermal regions considering the thermal gradient. Compared to the conventional NUCA design, our proposed design can save 41.2% write energy at most and 13.01% on average with negligible hardware overhead. [ABSTRACT FROM AUTHOR]

Due to serious problems of SRAM-based caches in nano-scale technologies, researchers seek for new alternatives. Among the existing options, STT-RAM seems to be the most promising alternative. With high density and negligible leakage power, STT-RAMs open a new door to respond to future demands of multi-core systems, i.e., large on-chip caches. However, several problems in STT-RAMs should be overcome to make it applicable in on-chip caches. High probability of write error due to stochastic switching is a major problem in STT-RAMs. Conventional Error-Correcting Codes (ECCs) impose significant area and energy consumption overheads to protect STT-RAM caches. These overheads in multi-core processors with large last-level caches are not affordable. In this paper, we propose Asymmetry-Aware Protection Technique (A$^2$ PT) to efficiently protect the STT-RAM caches. A$^2$ PT benefits from error rate asymmetry of STT-RAM write operations to provide the required level of cache protection with significantly lower overheads. Compared with the conventional ECC configuration, the evaluation results show that A $^2$ PT reduces the area and energy consumption overheads by about 42 and 50 percent, respectively, while providing the same level of protection. Moreover, A$^2$ PT decreases the number of bit switching in write operations by 28 percent, which leads to about 25 percent saving in write energy consumption. [ABSTRACT FROM AUTHOR]

For the sake of higher cell density while achieving near-zero standby power, recent research progress in Magnetic Tunneling Junction (MTJ) devices has leveraged Multi-Level Cell (MLC) configurations of Spin-Transfer Torque Random Access Memory (STT-RAM). However, in order to mitigate the write disturbance in an MLC strategy, data stored in the soft bit must be restored back immediately after the hard bit switching is completed. Furthermore, as the result of MTJ feature size scaling, the soft bit can be expected to become disturbed by the read sensing current, thus requiring an immediate restore operation to ensure the data reliability. In this paper, we design and analyze a novel Adaptive Restore Scheme for Write Disturbance (ARS-WD) and Read Disturbance (ARS-RD), respectively. ARS-WD alleviates restoration overhead by intentionally overwriting soft bit lines which are less likely to be read. ARS-RD, on the other hand, aggregates the potential writes and restore the soft bit line at the time of its eviction from higher level cache. Both of these two schemes are based on a lightweight forecasting approach for the future read behavior of the cache block. Our experimental results show substantial reduction in soft bit line restore operations, delivering 17.9 percent decrease in overall energy consumption and 9.4 percent increase in IPC, while incurring negligible capacity overhead. Moreover, ARS promotes advantages of MLC to provide a preferable L2 design alternative in terms of energy, area and latency product compared to SLC STT-RAM alternatives. [ABSTRACT FROM AUTHOR]

Spin-Transfer Torque RAM (STT-RAM) is a promising alternative to SRAM for implementing on-chip L2 and L3 caches. One of the most critical challenges in STT-RAM is reliability due to limited write endurance, which results in insufficient lifetime, as well as various types of errors. Previous studies have focused on either presenting various cache architectures/management techniques to improve the lifetime of STT-RAM caches or utilizing different Error Correcting Codes (ECCs) to protect against the permanent and transient errors. However, there is no quantitative analysis in the literature to determine the impact of ECCs on the lifetime of the STT-RAM caches. This paper formulates this impact and demonstrates that ECCs shorten the lifetime of STT-RAM cache lines by more than 50 percent due to ECCs high write activity. Then, we propose the Floating-ECC architecture for increasing the lifetime of the STT-RAM caches. The main idea is to evenly distribute the ECC write activity over all bits of cache lines by periodically relocating the ECC bits inside the cache lines. The simulation results for the most conventional ECC scheme, i.e., interleaved Single Error Correction-Double Error Detection (SEC-DED), show that Floating-ECC increases the lifetime of L2 and L3 caches by more than 318 percent and 254 percent, respectively. [ABSTRACT FROM PUBLISHER]

Magnetic Random Access Memory (MRAM) is a very promising emerging memory technology because of its various advantages such as nonvolatility, high density and scalability. In particular, Spin Orbit Torque (SOT) MRAM is gaining interest as it comes along with all the benefits of its predecessor Spin Transfer Torque (STT) MRAM, but is supposed to eliminate some of its shortcomings. Especially the split of read and write paths in SOT-MRAM promises faster access times and lower energy consumption compared to STT-MRAM. In this paper, we provide a very detailed analysis of SOT-MRAM at both the circuit- and architecture-level. We present a detailed evaluation of performance and energy related parameters and compare the novel SOT-MRAM with several other memory technologies. Our architecture-level analysis shows that a hybrid-combination of SRAM for the L1-Data-cache, SOT-MRAM for the L1-Instruction-cache and L2-cache can reduce the energy consumption by 60% while the performance increases by 1% compared to an SRAM-only configuration. Moreover, the retention failure probability of SOT-MRAM is 27\boldsymbol \times smaller than the probability of radiation-induced Soft Errors in SRAM, for a 65nm technology node. All of these advantages together make SOT-MRAM a viable choice for microprocessor caches. [ABSTRACT FROM PUBLISHER]

To reduce power consumption of CPU, nonvolatile cache memory has been expected by replacing conventional volatile cache memory based on SRAM. This paper describes nonvolatile cache memory hierarchy design using fast and low-power perpendicular (FL-p-) STT-MRAM. For L3, L2 and L1 cache, 1T-1MTJ with FL-p-STT-MRAM, 6T-2MTJ, and short write pulse based 6T-2MTJ having voltage-induced magnetization switching has been presented for the most suitable combination for the cache memory. [ABSTRACT FROM AUTHOR]