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Your search keyword '"Bagherzadeh, Nader"' showing total 20 results

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Start Over You searched for: Author "Bagherzadeh, Nader" Remove constraint Author: "Bagherzadeh, Nader" Publication Year Range Last 10 years Remove constraint Publication Year Range: Last 10 years Database Academic Search Index Remove constraint Database: Academic Search Index Publisher elsevier b.v. Remove constraint Publisher: elsevier b.v.
20 results on '"Bagherzadeh, Nader"'

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1. Voltage island based heterogeneous NoC design through constraint programming.

3. On-chip parallel and network-based systems.

4. CLBM: Controlled load-balancing mechanism for congestion management in silicon interposer NoC architecture.

5. Application partitioning and mapping for bypass channel based NoC.

6. Energy and performance-aware application mapping for inhomogeneous 3D networks-on-chip.

7. On the design of hybrid routing mechanism for mesh-based network-on-chip.

8. Reliable and Energy Efficient MLC STT-RAM Buffer for CNN Accelerators.

9. IRHT: An SDC detection and recovery architecture based on value locality of instruction binary codes.

10. Toward efficient implementation of basic balanced ternary arithmetic operations in CNFET technology.

11. Hospital enterprise Architecture Framework (Study of Iranian University Hospital Organization).

12. High-performance ternary operators for scrambling.

13. Quantum-dot cellular automata circuits with reduced external fixed inputs.

14. Design of quaternary 4–2 and 5–2 compressors for nanotechnology.

15. A 3D universal structure based on molecular-QCA and CNT technologies.

16. Ternary cyclic redundancy check by a new hardware-friendly ternary operator.

17. Robust and energy-efficient carbon nanotube FET-based MVL gates: A novel design approach.

18. Designing quantum-dot cellular automata counters with energy consumption analysis.

19. A novel digital fuzzy system for image edge detection based on wrap-gate carbon nanotube transistors.

20. A high-performance fully programmable membership function generator based on 10 nm gate-all-around CNTFETs.

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