1. Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition.
- Author
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Guo, Tianzhen, Wang, Dan, Yang, Yajun, Xiong, Xiaoyong, Li, Kelin, Zeng, Guanggen, Li, Bing, and Ghali, Mohsen
- Subjects
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PULSED laser deposition , *THIN films , *SOLAR cells , *PHOTOVOLTAIC cells , *BAND gaps , *ABSORPTION coefficients - Abstract
CuSbSe 2 has been a potential absorber layer for thin film solar cells by reason of its attractive photovoltaic properties and environmentally friendly constituent elements. In this work, high-quality CuSbSe 2 thin film was prepared by pulsed laser deposition (PLD) and further in-situ annealing. Structural, morphological, compositional and optical properties of the unannealed and annealed films were characterized and compared separately. The results proved the existence of CuSbSe 2 , Sb 2 Se 3 and Cu 3 SbSe 3 in the unannealed film. With the rising of deposition temperature, the content of Sb 2 Se 3 increased significantly. Moreover, in-situ annealing at 350 °C can effectively reduce the Sb 2 Se 3 and Cu 3 SbSe 3 in the film. The atomic ratio of Cu:Sb:Se in the annealed film is estimated to be 25.45:26.29:48.27, basically consistent with the stoichiometry ratio of CuSbSe 2. Both annealed and unannealed CuSbSe 2 films revealed a high absorption coefficient greater than 104 cm−1. The optical band gap of the annealed film was about 1.15eV, which meets the requirements for the absorber layer of solar cells. •High-quality CuSbSe 2 thin film was successfully prepared by pulsed laser deposition •The effect of deposition temperature on CuSbSe 2 thin film prepared by pulsed laser deposition was explored •In-situ annealing was applied to reduce impurities and promote the formation of CuSbSe 2 •It would be helpful for the applications of CuSbSe 2 in solar cells in the future. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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