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• Broadband NIR organic photodetectors based on low bandgap polymers and fullerenes heterojunctions with tunable EQE and responsivity. • Additive layer-by-layer deposition and thickness control achieved via inkjet printing. • Achieved control over the active material thickness and optical filtering in the UV–vis region while enhancing the NIR detection. • This strategy can lead to realization of multi-color OPDs arrays without the utilization of color filters. The use of printing technologies is widely recognized to be a major advantage for the deployment of large-area organic electronics and there is still plenty of room for exploring new strategies to exploit printing of solution processable conductors and semiconductors. In this paper, we show for the first time how an additive layer-by-layer deposition, achieved through inkjet printing, enables the fabrication of broadband organic photodetectors with a flat responsivity spectrum extending to the near-infrared (NIR). The use of narrow bandgap polymers enables light detection up to 1.1 μm. By controlling the photoactive layer thickness in a range between 150 nm and 4 μm, we could filter the contribution from UV and Vis absorption to the photocurrent, while keeping light detection in the NIR. The visible detection efficiency decreases of a 70% at 425 nm for thicknesses going from 250 nm up to 2 μm, while the NIR detection decreases only of 31% at 950 nm, and increases of 26% at 1020 nm. This photoactive layer thickness dependent UV–vis optical filtering enables the control over the shape of the responsivity spectra. [ABSTRACT FROM AUTHOR]

The reduction of dark current is required to enhance the signal-to-noise ratio and decrease the power consumption in photodetectors. This is typically achieved by introducing additional functional layers to suppress carrier injection, a task that proves to be challenging especially in printed devices. Here we report on the successful reduction of dark current below 100 nA cm −2 (at −1 V bias) in an inkjet printed photodetector by the insertion of an electron blocking layer based on poly[3-(3,5-di-tert-butyl-4-methoxyphenyl)-thiophene], while preserving a high quantum yield. Furthermore, the electron blocking layer strongly increases the surface energy of the hydrophobic photoactive layer, therefore simplifying the printing of transparent top electrodes from water based formulations without the addition of surfactants. [ABSTRACT FROM AUTHOR]