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Organic–inorganic metal halide perovskites have recently attracted enormous interest in the field of resistive switching memories owing to their unique electrical properties. Unfortunately, two challenges, the inadequate long-term stability and the toxicity of lead, largely hinder their further practical application. Herein, a 1D all-inorganic lead-free CsCu2Br3 perovskite is proposed for resistive switching devices to resolve these issues. The CsCu2Br3-based resistive switching devices exhibit typical bipolar resistive switching behavior with low set voltage, high on/off ratio (103), stable retention properties (>2 × 104 s), and endurance (200 cycles) in air. The unencapsulated CsCu2Br3-based device still maintains resistive switching characteristics while stored in ambient environment for over 2 months. Moreover, four on-state multilevel information storage behavior has been observed by regulating the value of compliance current during set process. The resistive switching behavior is dominated by the formation and fracture of conductive filaments, which are induced by the movement of Br − ions under electrical bias. This work offers the opportunity and strategy for the design of air-stable and environment-friendly metal halide perovskite-based memory devices. [ABSTRACT FROM AUTHOR]

Cs2AgBiBr6 double perovskite nanocrystals (NCs) are materials within the halide perovskite family with promising application potential, owing to their nontoxicity and excellent stability. Herein, Cs2AgBiBr6 NCs were synthesized and their photo-physical properties were investigated in detail. The temperature-dependent photoluminescence (PL) test confirms that their PL mechanism is dependent on the competition between the PL originating from carrier recombination in the conduction band and that in the self-trapping states. Their carrier recombination constants (involving the monomolecular, bimolecular, and Auger recombination rate constants) were obtained from transient absorption data and indicated that the monomolecular recombination decreases with the lowering of temperature, while the bimolecular and Auger recombination show opposite trends. The nonlinear optical properties were studied based on the Z-scan technique, with a two-photon absorption cross section of approximately 1906 GM. Our results suggest that Cs2AgBiBr6 NCs can be extensively applied in the field of optoelectronics, and conventional electronic switches will benefit from the excellent carrier dynamics and nonlinear optical properties. [ABSTRACT FROM AUTHOR]