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When experimental resources are significantly constrained, resolution V fractional factorial designs are often prohibitively large for experiments with 6 or more factors. Resolution IV designs may also be cost prohibitive, as additional experimentation may be required to de-alias active 2-factor interactions (2FI). This paper introduces 20-run no-confounding screening designs for 6 to 12 factors as alternatives to resolution IV designs. No-confounding designs have orthogonal main effects, and since no 2FI is completely confounded with another main effects or 2FI, the experimental results can be analyzed without follow-on experimentation. The paper concludes with the results of a Monte Carlo simulation used to assess the model-fitting accuracy of the recommended designs. [ABSTRACT FROM AUTHOR]

Abstract: In this paper, we develop new governing equations for thermo‐gradient‐dependent theory of plasticity. They include the coupled effects of thermal elastic‐plastic theory, including balance and constitutive equations. To demonstrate the salient feature of the gradient‐dependent model of plasticity, particular attention is addressed to isotropic hardening with second sound effects to eliminate the paradox of infinite speed of thermal signals. The resulting system of partial differential equations formally describes the coupled thermomechanical behavior of the gradient‐dependent elasto‐plastic system. Then, we develop an appropriate state‐space form and, by using the semigroup theory, we prove the well‐posedness and the exponential stability of the thermo‐gradient‐dependent elasto‐plastic one‐dimensional problem. Finally, we perform numerical simulations to validate the proposed model and to show its capability. [ABSTRACT FROM AUTHOR]

In this paper, a unified cubic flux-controlled memristor is proposed, and how to choose its parameters to obtain an appropriate memristor is investigated. The relevant frequency band of the exciting source that enables the memristor to keep its characteristics (call it mem-frequency band) is analyzed, and the matter of high mem-frequency is also clinched. Based on the trend of their i-v curves versus time, the memristors are divided into two types: P and N. The design, simulations and experiments of the circuits for the presented memristor model are given to describe its dynamical behaviors. The results from simulations and experiments are in good agreement with the theoretical analysis, which are of special guidance for designing such device to satisfy the requirements in practical engineering. Copyright © 2014 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]