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Abstract In this work, we theoretically investigate the structural dependence of intersubband absorption of InGaAsSb/GaAs single quantum well structures. We begin by analyzing the impact of In and Sb incorporation on the critical thickness, conduction band offset and band gap energy. The first two electron energy levels E 12 and the corresponding wavelength were made for the In x Ga 1− x As 1- y Sb y /GaAs system and are analyzed in detail by solving the Schrödinger equation. Also, we have investigated effects of composition and well width on the intersubband absorption. In addition, the wavelength and absorption coefficient of the ISBT can be adjusted and optimized by changing the composition and the width of the SQW. Finally, strain effects on intersubband absorption and on the peak response wavelength have also been systematically studied. Our study shows that InGaAsSb/GaAs SQW will play a key role in research of electronics and photonic devices in the future. Highlights • Studied the effects of structural parameters on the Intersubband transition of InGaAsSb/GaAs QWs. • Absorption coefficient dependency on the InGaAsSb structural parameters has been investigated. • The effects of these parameters are numerically studied. • Effect of the strain on peak wavelength and on the maximum absorption has been verified. • InGaAsSb/GaAs is a good candidate as a novel material system for optoelectronic intersubband devices. [ABSTRACT FROM AUTHOR]