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In this article, SnxCu1−xI thin-film transistors were fabricated on a glass substrate, with CuI doped with varying concentrations of SnI2 serving as the channel and chitosan as the dielectric. When x = 0.06, the device exhibited optimal performance: a current on/off ratio of 2.56 × 105, a subthreshold slope of 31.67 mV/dec, a threshold voltage of 1.33 V, and a saturated field-effect mobility of 21.75 cm2 V−1 s−1. Due to the electric double layer effect of chitosan, the operating voltage of the devices was reduced to below 2 V. Simulations were also conducted on the behavior and functionality of artificial synapses, such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Building upon the functionalities of artificial synapses, the Sn0.06Cu0.94I neuromorphic transistors simulated the fundamental pain perception function of biological nociceptors. Finally, the effects of bias stress and laser irradiation on the devices were investigated, indicating the excellent stability of the Sn0.06Cu0.94I neuromorphic transistors. Fabricated via the solution process, this low-voltage neuromorphic transistors hold significant implications for applications in bionic sensing systems and neuromorphic chip technology. [ABSTRACT FROM AUTHOR]

This article investigated the effect of geometric structural parameters on flow patterns and pressure drops and gas–liquid mixing effects of gas–liquid mixing devices. The computational fluid dynamics software FLUENT was used to calculate the airflow inside the mixer of a compressed air–foam gas–liquid mixing device with different cone angles, foam flow rates, air inlet inclination angles, and pipeline diameters. The results obtained are the pressure distribution, the liquid volume fraction, and the liquid phase streamlines in the mixing device. The numerical simulation results showed that for a gas–liquid mixing device, the optimal inlet inclination angle was 60°–70°, and the mixing effect of an equal diameter mixer was better than that of a variable diameter mixer, but it would reduce the mixing efficiency of the air and foam. The optimal pipeline diameter of the conveying pipeline was 190 mm, and the optimal cone angle of the mixing device was 55°. [ABSTRACT FROM AUTHOR]

Wide bandgap β-Ga2O3 is an ideal candidate material with broad application prospects for power electronic components in the future. Aiming at the application requirements of β-Ga2O3 in space photoelectric devices, this work studies the influence of 40 MeV Si ion irradiation on the microstructure and optical properties of β-Ga2O3 epi-wafers. Raman spectroscopy analysis confirms that Si ion irradiation destroys the symmetric stretching mode of tetrahedral–octahedral chains in β-Ga2O3 epi-wafers, and the obtained experimental evidence of irradiation leads to the enhanced defect density of VO and VGa–VO from x-ray photoelectron spectroscopy. Combined with first-principles calculations, we conclude that most configurations of VO and VGa–VO are likely non-radiative, leading to quenching of experimental photoluminescence intensity. Unraveling optical degradation mechanism and predicting the optical application of β-Ga2O3 devices in the space environment by combining ground irradiation experiments with first-principles calculations still be one of the focuses of research in the future. [ABSTRACT FROM AUTHOR]

Indium phosphide is widely used in electronics and photovoltaic devices due to its high electro-optical conversion efficiency, high electron mobility, and good radiation resistance. Defects are the main limitation for the performance of InP devices. In this work, based on hybrid functional with finite size correction, electronic properties of intrinsic and H-related defects have been investigated in InP. We found that PIn defect is the most stable intrinsic defect with the lowest formation energy. Defect signals detected experimentally are defined by our calculated results. Experimentally observed electron traps with the energy level of EC −0.66 eV and EC −0.68 eV are ascribed to the transition level ɛ(−1/−2) and ɛ(−2/−3) of In vacancies. The hydrogenated vacancies in InP have been systematically reported in the present work. Formation energies of H-related defects indicate that hydrogen atoms prefer to bind to In vacancy than P vacancy. The formation energy of In vacancy decreases with the addition of H, while that of P vacancy increases. For hydrogenated In vacancies, it captures fewer electrons than bare In vacancies when the Fermi level is close to CBM. Especially for the VIn −3H structure, it is 0 charge state in all Fermi levels so that it will not tend to capture electron or hole. Our work is helpful to explain experimental phenomena and radiation-induced damages and improve the performance of InP devices. [ABSTRACT FROM AUTHOR]

The extinction spectra of a three-layered metal nanoshell, which consists of a particle with a dielectric core, a middle Ag (Au) layer, and an outer Au (Ag) shell, have been investigated by means of the Mie theory. With a decrease in the outer shell thickness or the middle layer thickness, the wavelengths of the localized surface plasmon resonance (LSPR) for SiO2–Ag–Au (SiO2–Au–Ag) nanoshells show distinct redshifts and the full widths at half maximum (FWHMs) for the dipole peaks in the extinction spectra decrease first and then increase. We have further investigated the influence of the embedding medium on the LSPRs for SiO2–Ag–Au and SiO2–Au–Ag nanoshells and found that the resonance wavelengths of the particles show redshift and the FWHM of the dipole peak increases with increasing the dielectric constant of the embedding medium. The calculated results indicate that the LSPR of the three-layered gold-silver nanoshells can be controlled to the near-infrared region by changing the geometry, which has practical biomedical application. [ABSTRACT FROM AUTHOR]

Two-dimensional molybdenum disulfide (2D MoS2) has great application prospects in the field of optoelectronic devices. Defect engineering is an effective way to regulate the electronic and optical properties of 2D MoS2. However, defect controlling on 2D materials remains a major challenge. Fluorine, as the most electronegative element, may cause many interesting phenomena after doping in 2D materials. So far, there have been no reports on the effect of fluoride ion (F− ion) irradiation on 2D material properties. In this paper, the monolayer MoS2 (ML-MoS2) synthesized by the chemical vapor deposition method was taken as the research object, and defects with controllable densities were produced by 30 keV F− ion irradiation, in which the defects were dominated by S vacancies. Based on Raman, photoluminescence, and x-ray photoelectron spectroscopy, it is shown that the ion irradiation-induced defects significantly affect the optoelectronic properties of MoS2. We also observed the p-doping of ML-MoS2, which is attributed to the introduction of F− ions and the electron transfer from MoS2 to O2 at defect adsorption sites. This study reveals that 2D materials could be effectively doped or compensated using irradiation technology, potentially fabricating novel 2D electrical devices through defect engineering. [ABSTRACT FROM AUTHOR]

A hydrogen sensor is created on the basis of an acoustic topological material with a coiled structure. Compared to traditional hydrogen sensors, the sensor does not possess a sensitive layer and works with the shift of a topological interface state induced by hydrogen. The sensor is composed of two phononic crystals with distinct topological characteristics, and an interface state is achieved at the interface of both phononic crystals. When hydrogen is introduced into the sensor, the density and the sound velocity of the gas in the sensor change, which shifts the frequency of the interface state. Thus, the concentration of hydrogen can be obtained by measuring the frequency shift of the interface state. Due to the absence of a sensitive layer, the sensor operates without a chemical sorption process, and the performance of the sensor is marginally influenced by working conditions, temperature, and humidity. Theoretical analysis, numerical simulations, and experimental results show that in different background gases, synthetic air, nitrogen, and argon, the sensor exhibits relative sensitivities of 0.50, 0.50, and 0.37, which do not change with the working conditions. Additionally, the sensor possesses a rapid response, a good linearity and robustness, and a long lifespan. Furthermore, the sensor is designed based on a coiled structure, which considerably improves the space utilization and decreases the bulk. [ABSTRACT FROM AUTHOR]

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to − 0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques. [ABSTRACT FROM AUTHOR]

The weak peak at ultraviolet region observed by Zhu and Zhang in gold nanoshells should not be ascribed to the coupling of the “quadruple resonance,” which may be interpreted in terms of the contributions of the interband transitions in the Au layer. In addition, the quasistatic theory used by Zhu and Zhang is not suitable for investigation of the optical properties of gold nanoshells when the total radius of the shell is larger than the quasistatic limit. Furthermore, it is obvious that the strength and position of the local field factor peak should vary with the radial distance and the polar angle. [ABSTRACT FROM AUTHOR]

Inspired by the human brain's capacity as a powerful biological computer capable of simultaneously processing a vast array of cognitive tasks, many emerging artificial synapse devices have been developed in recent years. Electric-double-layer (EDL) transistors based on interfacial ion-modulation have attracted widespread attention for simulating synaptic plasticity and neural functions. Here, low-voltage EDL p-type thin-film transistors (TFTs) are fabricated on glass substrates, with Ni-doped cuprous iodide (Ni0.06Cu0.94I) as the channel and chitosan as the dielectric. The electrical performance of the Ni0.06Cu0.94I TFTs is investigated: current on/off ratio of 6.4 × 104, subthreshold swing of 33 mV/dec, threshold voltage of 1.38 V, operating voltage of 2 V, and saturation field-effect mobility of 15.75 cm2 V−1 s−1. A dual in-plane gate OR logic operation is demonstrated. Importantly, by applying single voltage pulses, dual voltage pulses, and multiple voltage pulses to the gate, the Ni0.06Cu0.94I transistors exhibited typical synaptic characteristics, including short-term potentiation, short-term depression, long-term potentiation, long-term depression, paired-pulse facilitation, and spiking-rate-dependent plasticity. Furthermore, the synaptic transistor can also simulate the learning–forgetting–relearning process of the human brain. These remarkable behaviors of voltage-stimulated synaptic transistors have potential for neuromorphic applications in future artificial systems. [ABSTRACT FROM AUTHOR]

Electron traps in AlGaN/GaN high electron mobility transistors were studied by combining theoretical and experimental methods. Energy levels about EC-0.9 eV due to irradiation are identified by deep-level transient spectroscopy (DLTS). Two electron traps, H1 (EC-0.63 eV) and H2 (EC-0.9 eV), were observed in the DLTS spectra. H1 was produced in device or material manufacturing, and H2 was caused by displacement damage. First, we reported that the signal peak of H2 can contribute from three defects labeled H2-1, H2-2, and H2-3 with energies EC-0.77 eV, EC-0.9 eV, and EC-0.98 eV, respectively. According to defect migration temperature and first principles calculation results, it is found that different configurations of di-nitrogen vacancy structures are the source of EC-0.77 eV and EC-0.9 eV signals. The defect of EC-0.98 eV is more stable at high temperatures, which may be related to gallium vacancy. [ABSTRACT FROM AUTHOR]

The advancement of acoustic metamaterials enables the highly efficient absorption of low-frequency noise with a subwavelength structure thickness, but the complexity of these structures often hinders their large-scale practical applications. Here, we propose a straightforward and compact acoustic metamaterial structure composed of Helmholtz resonators with side slits (HRSS) for low-frequency noise absorption. The introduction of side slits not only simplifies the overall structure but also allows for easy adjustment of acoustic characteristics. By adjusting the depth of the resonator within the slit across 25 distinct units, an absorption coefficient above 0.8 is realized from 470 to 930 Hz. This work demonstrates the extensive low-frequency sound absorption capability of HRSS, providing valuable insights into the design of future practical acoustic materials. [ABSTRACT FROM AUTHOR]

Transition metal dichalcogenides (TMDs) are regarded as a possible material platform for quantum information science and related device applications. In TMD monolayers, the dephasing time and inhomogeneity are crucial parameters for any quantum information application. In TMD heterostructures, coupling strength and interlayer exciton lifetimes are also parameters of interest. However, many demonstrations in TMDs can only be realized at specific spots on the sample, presenting a challenge to the scalability of these applications. Here, using multi-dimensional coherent imaging spectroscopy, we shed light on the underlying physics—including dephasing, inhomogeneity, and strain—for a MoSe2 monolayer and identify both promising and unfavorable areas for quantum information applications. We, furthermore, apply the same technique to a MoSe2/WSe2 heterostructure. Despite the notable presence of strain and dielectric environment changes, coherent and incoherent coupling and interlayer exciton lifetimes are mostly robust across the sample. This uniformity is despite a significantly inhomogeneous interlayer exciton photoluminescence distribution that suggests a bad sample for device applications. This robustness strengthens the case for TMDs as a next-generation material platform in quantum information science and beyond. [ABSTRACT FROM AUTHOR]

The potential and limitations of Rayleigh wave spectroscopy to characterize the elastic depth profile of heterogeneous functional gradient materials are investigated by comparing simulations of the surface acoustic wave dispersion curves of different profile-spectrum pairs. This inverse problem is shown to be quite ill posed. The method is then applied to extract information on the depth structure of a glass-ceramic (alumina) functionally graded material from experimental data. The surface acoustic wave analysis suggests the presence of a uniform coating region consisting of a mixture of Al2O3 and glass, with a sharp transition between the coating and the substrate. This is confirmed by scanning electron microscope with energy dispersive x-ray analysis. [ABSTRACT FROM AUTHOR]

In this Letter, a bilayer elastic C6v structure is proposed and used to precisely manipulate two topological nontrivial valley pseudo-spin states. According to the theoretical simulation results, the two elastic pseudo-spin states have opposite valley polarizations along propagation directions. Owing to the interlayer polarization and mixing effects of the elastic valley pseudo-spin states in the bilayer elastic C6v structure, the transport and prohibition of elastic valley pseudo-spin states and even the tunneling between layers are flexibly manipulated. The transmission efficiency of elastic valley pseudo-spin states across layers reaches 93%, which has also been confirmed in experiments by the laser ultrasonic method. The in-depth exploration of valley pseudo-spin states with layer indices further expands and enriches the research of valley pseudo-spin states in the elastic environment and lays the foundation for the further design of elastic topological devices. [ABSTRACT FROM AUTHOR]

Early detection and monitoring of heavy load induced plastic deformation in the structure is crucial for timely intervention before cracking occurs and the material completely fails. Ultrasound can be used for detecting plastic deformation provided the mechanical modulus, which can be probed via changes in velocities. This work presents a measurement scheme that makes use of optically detected, laser-induced surface acoustic waves (SAWs) for remote, real-time, online monitoring of the wave velocity during the elastic–plastic transition occurring in an aluminum plate undergoing a uniaxial tensile test and a dynamic fatigue test. Monochromatic SAWs were photoacoustically generated in a wavelength-controlled way through a transient thermal grating based laser ultrasonics excitation scheme. The SAWs were detected by a home-built photorefractive interferometer. The results reveal both regions of acceleration and slowing down, indicating that the material first stiffens and then starts to form microcracks that make it behave effectively softer for propagating SAWs. [ABSTRACT FROM AUTHOR]

We demonstrate the direct generation of optical vortex pulses with stable energy and changeable orbital angular momentum. Single Laguerre-Gaussian (LG0,l) laser modes were directly generated using a laser diode with output intensity profile of doughnut distribution. With passive Q-switching, vortex pulses with stable energy were obtained. Moreover, the topological charge was changeable by variation of the pump power. By a mode-converter and second harmonic generation, the LG0,2l mode was identified. It can be proposed that this pulsed laser should have promising applications in various fields based on its compact structure, stable and high pulse energy, and changeable orbital angular momentum. [ABSTRACT FROM AUTHOR]