1. Photodetector with artificial atoms of silicon.
- Author
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Hu, Shu-Fen, Liao, Ting-Wei, and Huang, Chao-Yuan
- Subjects
- *
QUANTUM dots , *QUANTUM electronics , *PHOTONS , *LIGHT , *PHYSICS - Abstract
The authors demonstrate a potential application of quantum dots for the detection of photons, showing that the Coulomb interaction resulting from the capture of photoexcited carriers by quantum dots produces a detectable change in the source-drain resistance of the transistor. This quantum effect is more pronounced with higher illumination, displaying staircase quantum steps with ΔV=4 mV on the I-V characteristics at room temperature, implying that the photocurrent is increased as the light intensity is increased. The responsitivity of device is R∼3.98×106 A/W for Vd=0.18 V, and external quantum efficiency is more than 8.6%. [ABSTRACT FROM AUTHOR]
- Published
- 2007
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