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Layered transition-metal dichalcogenides (TMDs) have recently attracted intense scientific and engineering interest because of their unique semiconducting and opto-electronic properties. We investigated the pressure-induced structural phase transition of layered semiconductor molybdenum disulfide (MoS2) using Raman spectroscopy and studied its metallization using infrared (IR) spectroscopy under both non-hydrostatic and quasi-hydrostatic conditions. Under quasi-hydrostatic and non-hydrostatic conditions, we found that the structural phase transition from 2 Hc stacking to 2 Ha stacking starts at approximately 16 and 21 GPa, respectively, and finishes at ∼35 and ∼41 GPa, respectively. Furthermore, the structural phase transition was followed by a semiconductor-to-metal (S-M) electronic transition. The pressure point of metallization under quasi-hydrostatic conditions is ∼5 GPa lower than that under non-hydrostatic conditions. [ABSTRACT FROM AUTHOR]

Single crystalline C60 nanotubes having face-centered-cubic structure with diameters in the nanometer range were synthesized by a solution method. In situ Raman and photoluminescence spectroscopy under high pressure were employed to study the structural stabilities and transitions of the pristine C60 nanotubes. A phase transition, probably because of the orientational ordering of C60 molecules, from face-centered-cubic structure to simple cubic structure occurred at the pressure between 1.46 and 2.26 GPa. At above 20.41 GPa, the Raman spectrum became very diffuse and lost its fine structure in all wavenumber regions, and only two broad and asymmetry peaks initially centered at 1469 and 1570 cm-1 were observed, indicating an occurrence of amorphization. This amorphous phase remained to be reversible until 31.1 GPa, and it became irreversible to the ambient pressure after the pressure cycle of 34.3 GPa was applied. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]