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Element doping/alloying is a common strategy to tune the electrical and thermal transports of thermoelectric (TE) materials, but the doping/alloying limit of foreign elements in many TE materials is usually very low, bringing a great challenge to improve the TE performance. In this work, beyond the classic principle of “like dissolves like,” it is found that choosing the compound with a severely distorted lattice and diversified chemical bonding as the matrix also facilitates achieving a high doping/alloying limit. Taking ductile semiconductors as an example, this work shows that gold (Au) element is nearly immiscible in Ag2S and Ag2Te, but has a relatively high alloying limit in complex Ag2S0.5Te0.5 meta‐phase. Au in Ag2S0.5Te0.5 significantly decreases the carrier concentration and improves the TE performance, but scarcely changes the mechanical properties. Consequently, Ag1.99Au0.01S0.5Te0.5 demonstrates both a high figure‐or‐merit of 0.95 at 550 K and extraordinary room‐temperature ductility. This work offers an effective and general strategy to develop stabilized doped/alloyed TE materials. [ABSTRACT FROM AUTHOR]

Deformable thermoelectrics have great potential in self‐powered flexible or hetero‐shaped electronics. The exceptional room‐temperature plasticity recently discovered in several inorganic semiconductors makes it possible to develop new thermoelectric (TE) materials with both high performance and intrinsic deformability. Nonetheless, all the known plastic or ductile TE materials are n‐type semiconductors. It is urgent to explore p‐type counterparts for device design and fabrication. In this study, the first p‐type plastic inorganic TE material is reported. Via alloying Cu in n‐type plastic Ag2S0.7Se0.3 to modulate the charged crystal defects, (Ag1−xCux)2S0.7Se0.3 (x = 0.7–0.8) can simultaneously realize good plasticity and p‐type conduction. Particularly, (Ag0.2Cu0.8)2S0.7Se0.3 with a hexagonal structure shows a maximum zT of 0.42 at 800 K. Via the introduction of Cu deficiencies, the good plasticity is well maintained while the maximum zT is greatly enhanced to 0.95 at 800 K, a record‐high value for plastic TE materials. This study is expected to accelerate the development of plastic TE semiconductors and full‐inorganic deformable TE devices for the application in hetero‐shaped power generators. [ABSTRACT FROM AUTHOR]

Keywords: defect engineering; flexible electronics; plastic inorganic semiconductors; thermoelectrics EN defect engineering flexible electronics plastic inorganic semiconductors thermoelectrics 1 1 1 06/21/21 20210617 NES 210617 In article number 2100883, Pengfei Qiu, Tian-Ran Wei, Xun Shi, and co-workers develop the first p-type plastic inorganic thermoelectric material. Thermoelectrics: p-Type Plastic Inorganic Thermoelectric Materials (Adv. Defect engineering, flexible electronics, plastic inorganic semiconductors, thermoelectrics. [Extracted from the article]