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A novel vertical architecture for all-printed organic electrochemical transistors, based on poly(3, 4-ethylenedioxythiophene):poly(styrene sulfonate), realized on flexible substrates, is reported. The transistors are manufactured along both faces of plastic or paper substrates and via connections are realized using laser ablation or simple punch through using a pin. Successful modulation of the electric current that flows between the two sides of the substrate is achieved using electrolyte-gating and electrochemical modulation of the electronic charge transport of the bulk of the transistor channel. In addition to this, the transistors are exhibiting fast switching and high ON/OFF current ratios. [ABSTRACT FROM AUTHOR]

Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (loT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within loT applications. [ABSTRACT FROM AUTHOR]