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Sb 2 Se 3 is a promising absorber for thin film solar cells due to its nontoxicity, low cost, earth abundance and excellent photovoltaic properties. However, few reports focus on Sb 2 Se 3 thin films prepared by pulsed laser deposition (PLD). Here we successfully deposited Sb 2 Se 3 thin films at different substrate temperatures by PLD. Structural, morphological, compositional, optical and electrical properties of Sb 2 Se 3 thin films were characterized. Results show that Sb 2 Se 3 thin films exhibit orthorhombic phase with good crystallinity and higher substrate temperature can distinctly improve crystal quality. Optical band gap is about 1.30 eV, 1.20 eV, 1.18 eV and 1.16 eV for Sb 2 Se 3 thin films deposited at 370 °C, 390 °C, 410 °C and 430 °C, respectively. In addition, the atomic ratio of selenium to antimony is 3/2, entirely consistent with the stoichiometry ratio of Sb 2 Se 3. Image 1 • Sb 2 Se 3 thin films were prepared on glass at different substrate temperatures by KrF PLD. • The atomic ratio of selenium to antimony was 3/2, entirely consistent with the stoichiometry ratio of Sb 2 Se 3. • Optical band gap was estimated to be 1.30 eV, 1.20 eV, 1.18 eV and 1.16 eV for Sb 2 Se 3 thin films deposited at 370 °C, 390 °C, 410 °C and 430 °C respectively. • High substrate temperature improved crystal quality. [ABSTRACT FROM AUTHOR]

CuSbSe 2 has been a potential absorber layer for thin film solar cells by reason of its attractive photovoltaic properties and environmentally friendly constituent elements. In this work, high-quality CuSbSe 2 thin film was prepared by pulsed laser deposition (PLD) and further in-situ annealing. Structural, morphological, compositional and optical properties of the unannealed and annealed films were characterized and compared separately. The results proved the existence of CuSbSe 2 , Sb 2 Se 3 and Cu 3 SbSe 3 in the unannealed film. With the rising of deposition temperature, the content of Sb 2 Se 3 increased significantly. Moreover, in-situ annealing at 350 °C can effectively reduce the Sb 2 Se 3 and Cu 3 SbSe 3 in the film. The atomic ratio of Cu:Sb:Se in the annealed film is estimated to be 25.45:26.29:48.27, basically consistent with the stoichiometry ratio of CuSbSe 2. Both annealed and unannealed CuSbSe 2 films revealed a high absorption coefficient greater than 104 cm−1. The optical band gap of the annealed film was about 1.15eV, which meets the requirements for the absorber layer of solar cells. •High-quality CuSbSe 2 thin film was successfully prepared by pulsed laser deposition •The effect of deposition temperature on CuSbSe 2 thin film prepared by pulsed laser deposition was explored •In-situ annealing was applied to reduce impurities and promote the formation of CuSbSe 2 •It would be helpful for the applications of CuSbSe 2 in solar cells in the future. [ABSTRACT FROM AUTHOR]