1. Structural, morphological, compositional, optical and electrical properties of Sb2Se3 thin films deposited by pulsed laser deposition.
- Author
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Yang, Ke, Li, Bing, and Zeng, Guanggen
- Subjects
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PULSED laser deposition , *THIN films , *BAND gaps , *OPTICAL properties , *OPTOELECTRONIC devices , *SOLAR cells - Abstract
Sb 2 Se 3 is a promising absorber for thin film solar cells due to its nontoxicity, low cost, earth abundance and excellent photovoltaic properties. However, few reports focus on Sb 2 Se 3 thin films prepared by pulsed laser deposition (PLD). Here we successfully deposited Sb 2 Se 3 thin films at different substrate temperatures by PLD. Structural, morphological, compositional, optical and electrical properties of Sb 2 Se 3 thin films were characterized. Results show that Sb 2 Se 3 thin films exhibit orthorhombic phase with good crystallinity and higher substrate temperature can distinctly improve crystal quality. Optical band gap is about 1.30 eV, 1.20 eV, 1.18 eV and 1.16 eV for Sb 2 Se 3 thin films deposited at 370 °C, 390 °C, 410 °C and 430 °C, respectively. In addition, the atomic ratio of selenium to antimony is 3/2, entirely consistent with the stoichiometry ratio of Sb 2 Se 3. Image 1 • Sb 2 Se 3 thin films were prepared on glass at different substrate temperatures by KrF PLD. • The atomic ratio of selenium to antimony was 3/2, entirely consistent with the stoichiometry ratio of Sb 2 Se 3. • Optical band gap was estimated to be 1.30 eV, 1.20 eV, 1.18 eV and 1.16 eV for Sb 2 Se 3 thin films deposited at 370 °C, 390 °C, 410 °C and 430 °C respectively. • High substrate temperature improved crystal quality. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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