1. An Integrated SiC CMOS Gate Driver for Power Module Integration.
- Author
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Barlow, Matthew, Ahmed, Shamim, Francis, A. Matt, and Mantooth, H. Alan
- Subjects
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HIGH performance computing , *SILICON carbide , *MODULATION-doped field-effect transistors , *GATES , *HIGH temperature electronics - Abstract
With high-temperature power devices available, the support circuitry required for efficient operation, such as a gate driver, is needed as part of a complete high-temperature solution. The design of an integrated silicon carbide (SiC) gate driver using a 1.2-μm complementary metal–oxide–semiconductor (CMOS) process is presented. Adjustable drive strength is added to facilitate a minimal external component requirement for high-temperature power modules and lays the groundwork for dynamic adjustment of drive strength. The adjustable drive strength feature demonstrates a capability of reducing overshoot and controlling dv/dt dynamically. Measurement of the gate driver was performed driving a power mosfet gate over temperature, exceeding 500 °C. High-speed and high-voltage room temperature evaluation is provided, demonstrating a system capable of high performance over temperature. The driver accomplishes better than 75 ns of rise and fall time driving the Cree CPM3-0900-0065B from room temperature to over 500 °C indicating that it will be ideal for integration into an all-SiC power module where driver, protection circuits, and power devices are fabricated in SiC. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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