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The authors demonstrate a potential application of quantum dots for the detection of photons, showing that the Coulomb interaction resulting from the capture of photoexcited carriers by quantum dots produces a detectable change in the source-drain resistance of the transistor. This quantum effect is more pronounced with higher illumination, displaying staircase quantum steps with ΔV=4 mV on the I-V characteristics at room temperature, implying that the photocurrent is increased as the light intensity is increased. The responsitivity of device is R∼3.98×106 A/W for Vd=0.18 V, and external quantum efficiency is more than 8.6%. [ABSTRACT FROM AUTHOR]

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (Id) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, at up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the Id oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal–oxide–semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems. [ABSTRACT FROM AUTHOR]

Arrays of ZnO nanorods (NRs) were successfully converted into nanotubes (NTs), used as photoelectrodes in photoelectrochemical (PEC) cells after their sensitization with CdSe quantum dots (QDs) and a strong correlation between the PEC performance and geometrical structure of ZnO NTs@CdSe(QDs) and ZnO NRs@CdSe(QDs) was established under the same conditions. [ABSTRACT FROM AUTHOR]

Abstract In this review paper, we highlight the utilization of nanostructured quantum dots (QDs) in light-emitting diodes, biomedical, and energy-related applications. We discuss different preparation methods, cation-doping effects, and the optical applications of perovskite QDs. Cadmium selenide QDs are semiconductor materials with narrow bandgaps; therefore, their optical properties and electronic structures can be tuned. They can absorb photons (light energy) and convert multiple electron-hole pairs efficiently via multiple exciton generations. These effective light absorption properties are suitable for solar-driven water electrolysis processes and efficient photo-electrochemical lithium-air batteries. We focus on the utilization of upconverting nanoparticles in the field of biomedical applications. Suitable bandgap position, efficient charge separation, transportation, and photo-stability are the advantages of QD nanostructured materials. Hence, they are efficient and challenging candidates for the future. Graphical abstract In this review, we summarize the utilization of nanostructured quantum dots (QDs) in light-emitting diodes, biomedical, and energy-related applications. We discuss different preparation methods, cation-doping effects, and the optical applications of perovskite QDs which have excellent optical performance in the application of the light-emitting device. Besides, Cadmium selenide QDs can absorb photons (light energy) and convert multiple electron-hole pairs efficiently via multiple exciton generations. These effective light absorption properties are suitable for solar-driven water electrolysis processes and efficient photo-electrochemical lithium-air batteries. Moreover, upconverting nanoparticles have the unique performance in the field of biomedical applications. fx1 [ABSTRACT FROM AUTHOR]

Li-ion batteries play a significant role in portable electronic devices in the running world. However, the limited energy density still needs to be improved for the growing future. Hence, we developed a photocathode nanocomposite material composed of Cadmium Selenide/Zinc Sulfide Quantum Dots with Carbon nanotube (CdSe/ZnS QD@CNT) for an efficient and tunable performance of the photoelectrochemical Li–O 2 battery system to overcome the key issue of overpotential. The QD and CNT networks can provide efficient transportation paths of the electron–hole pairs and the O 2 gas and lithium ions, respectively. The charging voltage of the photoelectrode is 2.65–4.0 V; therefore, decreased overpotential was due to efficient oxidation of Li 2 O 2 by photoexcited electron–hole pairs by using QDs, resulting in a long-term operational stability over 100 cycles. On the basis of the advantages, the QDs exhibit efficient potential in Li–O 2 batteries. [ABSTRACT FROM AUTHOR]