1. Full InGaN red light emitting diodes.
- Author
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Dussaigne, A., Barbier, F., Damilano, B., Chenot, S., Grenier, A., Papon, A. M., Samuel, B., Ben Bakir, B., Vaufrey, D., Pillet, J. C., Gasse, A., Ledoux, O., Rozhavskaya, M., and Sotta, D.
- Subjects
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LIGHT emitting diodes , *INDIUM gallium nitride , *NITROGEN , *QUANTUM efficiency , *QUANTUM wells , *BUFFER layers , *DELAYED fluorescence - Abstract
The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec, namely, InGaNOS, a n-doped buffer layer formed by a set of InxGa1−xN/GaN superlattices, thin InyGa1−yN/InxGa1−xN multiple quantum wells, and a p doped InxGa1−xN area. p-doped InGaN layers are first studied to determine the optimal Mg concentration. In the case of an In content of 2%, an acceptor concentration of 1 × 1019/cm3 was measured for a Mg concentration of 2 × 1019/cm3. Red electroluminescence was then demonstrated for two generations of LEDs, including chip sizes of 300 × 300 μm2 and 50 × 50 μm2. The differences between these two LED generations are detailed. For both devices, red emission with a peak wavelength at 620 nm was observed for a pumping current density of 12 A/cm2. Red light-emission is maintained over the entire tested current range. From the first to the second LED generation, the maximum external quantum efficiency, obtained in the range of 17–40 A/cm2, was increased by almost one order of magnitude (a factor of 9), thanks to the different optimizations. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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