1. Modify the Schottky contact between fluorine-doped tin oxide front electrode and p-a-SiC:H by carbon dioxide plasma treatment.
- Author
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Li, Tiantian, Zhang, Xiaodan, Ni, Jian, Fang, Jia, Zhang, Dekun, Sun, Jian, Wei, Changchun, Xu, Shengzhi, Wang, Guangcai, and Zhao, Ying
- Subjects
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SILICON solar cells , *TIN oxides , *SCHOTTKY effect , *CARBON dioxide transportation , *ELECTRODES , *AMORPHOUS silicon , *CARBON monoxide spectra , *PLASMA gases - Abstract
Carbon dioxide plasma (COP) treatment of a fluorine-doped tin oxide (SnO 2 :F, FTO) front electrode was used for the fabrication of p–i–n hydrogenated amorphous silicon (a-Si:H) solar cells. The oxygen and carbon monoxide radicals in COP play important roles of de-doping and doping effects on the surface of FTO, respectively. Through changing the COP treatment time, the de-doping and doping effects could alter the number of oxygen vacancies for both the bulk and the surface of FTO, resulting in an increase in the work function ( W F ) and a decrease in the Schottky barrier at the p-a-SiC:H/FTO interface. Due to an increase in the W F from 4.16 eV to 4.34 eV after 95 s treatment, the open circuit voltage ( V oc ) of the a-Si:H solar cells increased from 915 mV to 965 mV and the fill factor ( FF ) increased from 67.7% to 74.4%. Although the short-circuit current density ( J sc ) decreased from 11.76 mA/cm 2 to 10.36 mA/cm 2 after 95 s COP treatment due to the weakness of Burstein–Moss (BM) shift and the recombination at FTO surface, the conversion efficiency of the a-Si:H solar cell was enhanced by 12.24% after 45 s COP treatment, accompanied by improving the V oc and FF with almost constant J sc . [ABSTRACT FROM AUTHOR]
- Published
- 2016
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