1. Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning.
- Author
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Cardinali, G., Hjort, F., Prokop, N., Enslin, J., Cobet, M., Bergmann, M. A., Gustavsson, J., Ciers, J., Häusler, I., Kolbe, T., Wernicke, T., Haglund, Å., and Kneissl, M.
- Subjects
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TIME-resolved spectroscopy , *SURFACE emitting lasers , *EMISSION spectroscopy , *SURFACE roughness , *ROOT-mean-squares , *POWER density - Abstract
The performance of vertical-cavity surface-emitting lasers (VCSELs) is strongly dependent on the spectral detuning between the gain peak and the resonance wavelength. Here, we use angle-resolved photoluminescence spectroscopy to investigate the emission properties of AlGaN-based VCSELs emitting in the ultraviolet-B spectral range with different detuning between the photoluminescence peak of the quantum-wells and the resonance wavelength. Accurate setting of the cavity length, and thereby the resonance wavelength, is accomplished by using doping-selective electrochemical etching of AlGaN sacrificial layers for substrate removal combined with deposition of dielectric spacer layers. By matching the resonance wavelength to the quantum-wells photoluminescence peak, a threshold power density of 0.4 MW/cm2 was achieved, and this was possible only for smooth etched surfaces with a root mean square roughness below 2 nm. These results demonstrate the importance of accurate cavity length control and surface smoothness to achieve low-threshold AlGaN-based ultraviolet VCSELs. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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