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Water is the most essential element for human life after air, hence the amount and quality of water resources must be monitored by the appropriate government agencies. The goal of this research is to create and implement an IoT‐based rivers monitoring prototype system. Two basic components make up the proposed system: the first component represents the node points, and the second component represents the control point. In order to achieve continuous updates of the information via Internet from the node side, ESP32 with its built‐in Wi‐Fi adapter was utilized. The node should pinpoint three major situations, Normal, High. and Low of river water, and then transfer it using IoT to the control point to take an action depending on conditions at the river. © 2023 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC. [ABSTRACT FROM AUTHOR]

This effort develops and uses a smart stick to help blind individuals walk more safely and avoid hazards. This research paper involved to develop smart stick for blind people to help them to walk safely by avoiding obstructions, and at emergency conditions sent their location to person in charge like a doctor or relatives to help them accordingly. Three ultrasonic sensors are used in the proposed device’s architecture to detect obstructions at three different heights, low, mid, and high obstructions using speaker to alert the blind person. An emergency message with the location of the blind person’s phone is sent through a mobile app to the doctor or person in charge whenever the designed smart stick’s emergency button is touched, or the stick is dropped down. The Arduino Uno platform, Bluetooth model, MPU-6050 3-axis gyroscope as a position sensor, and microSd card module has been used to effectively implement the stick. At the testing stage, the device gave good results. The user received notifications in the form of voice messages and vibrations from the smart stick when it detects things or obstacles in front of them. Additionally, even though they cannot directly activate it, the automated emergency condition has been detection and activated. [ABSTRACT FROM AUTHOR]

This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography. [ABSTRACT FROM AUTHOR]

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness-based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current-voltage characteristics with different temperatures and gate oxide thickness values (Tox=1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET's temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (ΔI) within a working voltage range of 0-5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1-5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm. [ABSTRACT FROM AUTHOR]

This research paper is to define new rule to find the divisibility of stream of binary on any prime numbers 3, 5, 7 ...... with reminder 0. In general, the divisibility of binary numbers is most important in many digital circuits and mathematical applications. This paper explains this new rule for evaluating the divisibility of any binary number on any prime number greater than 2. This rule will depend on separating the binary number into blocks of bits then processes each block separately in a special procedure to find the possible divisibility on the prime number. After testing this new rule with prime numbers 3, 5, and 7 as a sample of prime numbers, the finding shows that this rule provides fast and true results. [ABSTRACT FROM AUTHOR]

This paper presents the temperature characteristics of a silicon nanowire transistor and its use as a temperature sensor. The OMEN nanowire simulation tool was used to investigate the temperature characteristics of the transistor. Current-voltage characteristics with different values of temperature for three orientations were simulated. The metal-oxide-semiconductor (MOS) diode connection suggests the use of the silicon nanowire transistor as a temperature nanosensor. © 2012 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. [ABSTRACT FROM AUTHOR]

The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET's designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 πS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V). The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not reduce its performance and efficiency in general. [ABSTRACT FROM AUTHOR]