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Magnetoactive soft materials, typically composed of magnetic particles dispersed in a soft polymer matrix, are finding many applications in soft robotics due to their reversible and remote shape transformations under magnetic fields. To achieve complex shape transformations, anisotropic, and heterogeneous magnetization profiles must be programmed in the material. However, once programmed and assembled, magnetic soft actuators cannot be easily reconfigured, repurposed, or repaired, which limits their application, their durability, and versatility in their design. Here, magnetoactive soft composites are developed from squid‐derived biopolymers and NdFeB microparticles with tunable ferromagnetic and thermomechanical properties. By leveraging reversible crosslinking nanostructures in the biopolymer matrix, a healing‐assisted assembly process is developed that allows for on‐demand reconfiguration and magnetic reprogramming of magnetoactive composites. This concept in multi‐material modular actuators is demonstrated with programmable deformation modes, self‐healing properties to recover their function after mechanical damage, and shape‐memory behavior to lock in their preferred configuration and un‐actuated catch states. These dynamic magnetic soft composites can enable the modular design and assembly of new types of magnetic actuators, not only eliminating device vulnerabilities through healing and repair but also by providing adaptive mechanisms to reconfigure their function on demand. [ABSTRACT FROM AUTHOR]

Recent experiments have shown the ability to introduce an anisotropy energy to the energy landscape of a thin-film nanomagnet through the use of mechanical strain. Assuming this strain-induced anisotropy is large enough, the low-energy state of the nanomagnet is altered and can be used to initialize the magnetization along a given axis. Utilizing this effect, we propose a more energy efficient method of nanomagnet reversal through spin-transfer torque (STT). This is accomplished by first initializing the magnetization to a high-energy state and then applying a short current pulse to nudge the magnetization in the appropriate energy basin. Using extensive numerical simulations, we qualitatively analyze this type of reversal and find the optimal parameters for reliable functionality while in the presence of thermal noise. We demonstrate that despite negating the initial portion of nominal STT reversal, where the STT must fight against the damping torque of the initial energy-basin, the magnitude of spin current required for our proposed strain-mediated reversal is equivalent to the nominal case. However, the strain-meditated reversal is beneficial by minimizing the spin-current pulsewidth necessary for reliable operation allowing for large energy savings. Assuming the strain-anisotropy is significantly larger than the nanomagnet’s internal free-axis anisotropy, strain-mediated reversals offer a 10 \times energy reduction over nominal STT reversals. [ABSTRACT FROM AUTHOR]

Ferrimagnetic insulators with perpendicular magnetic anisotropy are of particular interest for spintronics due to their ability to mitigate current shunting in spin–orbit torque heterostructures and enable low switching energy, high-density storage magnetic devices. Rare earth iron garnet Tm3Fe5O12 (TmIG) is one such material where prior studies have shown that the negative magnetostriction coefficient and isotropic in-plane tensile strain enable the magnetoelastic anisotropy to overcome the demagnetization energy and stabilize perpendicular magnetic anisotropy. However, the investigation of the tunability of the magnetoelastic anisotropy between thin films that possess perpendicular magnetization and quantification of the magnetoelastic constants has not been reported. Here, we quantify the evolution of magnetic anisotropy in (111)-oriented, epitaxial, 17 nm thick thin films of TmIG using a systematic variation of in-plane epitaxial strain (ranging 0.49%–1.83%) imposed by a suite of commercially available garnet substrates. Within the confines of the imposed strain range and deposition condition, the distortion from cubic symmetry is found to be approximately linear within the in-plane strain. The magnetic anisotropy field can be tuned by a factor of 14 in this strain range. The magnetoelastic anisotropy constant, B2, is found to be approximately constant (∼2500 kJ m−3) and more than 2× larger than the reported bulk value (∼1200 kJ m−3) for a cubic distortion between 90.17° and 90.71°. B2 is found to decrease at cubic distortions of 90.74° and larger. Our results highlight strain engineering, and its limitations, for control of perpendicular magnetic anisotropy. [ABSTRACT FROM AUTHOR]

A memristor array has emerged as a potential computing hardware for artificial intelligence (AI). It has an inherent memory effect that allows information storage in the form of easily programmable electrical conductance, making it suitable for efficient data processing without shuttling of data between the processor and memory. To realize its full potential for AI applications, fine-tuning of internal device dynamics is required to implement a network system that employs dynamic functions. Here, we provide a perspective on multicationic entropy-stabilized oxides as a widely tunable materials system for memristor applications. We highlight the potential for efficient data processing in machine learning tasks enabled by the implementation of "task specific" neural networks that derive from this material tunability. [ABSTRACT FROM AUTHOR]

Since the resurgence of multiferroics research, significant advancement has been made in the theoretical and experimental investigation of the electric field control of magnetization, magnetic anisotropy, magnetic phase, magnetic domains, and Curie temperature in multiferroic heterostructures. As a result of these advances, multiferroic heterostructures are on a trajectory to impact spintronics applications through the significantly reduced energy consumption per unit area for magnetization switching (1–500 μJ cm−2) when compared to that of current-driven magnetization switching (0.2–10 mJ cm−2). Considering this potential impact, it becomes necessary to understand magnetoelectric switching dynamics and characteristic switching times. The body of experimental work investigating magnetoelectric switching dynamics is rather limited, with the majority of room temperature converse magnetoelectric switching measurements reported having employed relatively long voltage pulses. Recently, however, the field has started to consider the kinetics of the switching path in multiferroic (and ferroelectric) switching. Excitingly, the results are challenging our understanding of switching processes while offering new opportunities to engineer the magnetoelectric effect. Considering the prospects of multiferroics for beyond-CMOS applications and the possible influence on operational speed, much remains to be understood regarding magnetoelectric switching kinetics and dynamics, particularly at reduced dimensions and under the influence of boundary effects resulting from strain, electrostatics, and orientation. In this article, we review magnetoelectric switching in multiferroic heterostructures for the electric field control of magnetism. We then offer perspectives moving toward the goal of low energy-delay spintronics for computational applications. [ABSTRACT FROM AUTHOR]

The development of high performance wide-bandgap AlGaN channel transistors with high current densities and reduced Ohmic losses necessitates extremely highly doped, high Al content AlGaN epilayers for regrown source/drain contact regions. In this work, we demonstrate the achievement of semi-metallic conductivity in silicon (Si) doped N-polar Al0.6Ga0.4N grown on C-face 4H-SiC substrates by molecular beam epitaxy. Under optimized conditions, the AlGaN epilayer shows smooth surface morphology and a narrow photoluminescence spectral linewidth, without the presence of any secondary peaks. A favorable growth window is identified wherein the free electron concentration reaches as high as ∼1.8 × 1020 cm−3 as obtained from Hall measurements, with a high mobility of 34 cm2/V·s, leading to a room temperature resistivity of only 1 mΩ·cm. Temperature-dependent Hall measurements show that the electron concentration, mobility, and sheet resistance do not depend on temperature, clearly indicating dopant Mott transition to a semi-metallic state, wherein the activation energy (Ea) falls to 0 meV at this high value of Si doping for the AlGaN films. This achievement of semi-metallic conductivity in Si doped N-polar high Al content AlGaN is instrumental for advancing ultrawide bandgap electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

The Nernst effect describes a linear relationship between orthogonal components of a magnetic field, a temperature gradient, and a resulting transverse electric field. A non-local electrical measurement, where injection and detection are physically separated on the specimen, serves as a versatile and effective platform for measuring spin and thermal effects due to the avoided interference with a charge current directly. Here, we quantify the Nernst coefficient of Pt, a common material for spin injection in non-local geometries, by a non-local electrical measurement under modulated temperature and magnetic field and finite element analysis for modeling heat transfer. We determine the Nernst coefficient of Pt from room temperature (8.56 nV K − 1 T − 1 ) to 10 K (29.3 nV K − 1 T − 1 ). Beyond the quantification of the Nernst coefficient, our results show that careful consideration of the thermal properties of the thermal sink and electrode materials is needed when making an interpretation of non-local electrical measurements. [ABSTRACT FROM AUTHOR]

Entropy-stabilized oxides are single-phase, multicomponent oxides that are stabilized by a large entropy of mixing, ΔS, overcoming a positive enthalpy. Due to the −TΔS term in the Gibbs' free energy, G, it can be hypothesized that entropy-stabilized oxides demonstrate a robust thermal stability. Here, we investigate the high temperature stability (1300–1700 °C) of the prototypical entropy-stabilized rocksalt oxide (MgCoNiCuZn)0.2O in air. We find that at temperatures >1300 °C, the material gradually loses Cu and Zn with increasing temperature. Cu is lost through a selective melting as a Cu-rich liquid phase is formed. Zn is sublimed from the rocksalt phase at approximately similar temperatures to those corresponding to the Cu loss, significantly below both the melting temperature of ZnO and its solubility limit in a rocksalt phase. The elemental loss progressively reduces the entropy of mixing and results in a multiphase solid upon quenching to room temperature. We posit that the high-temperature solubility of Cu and Zn is correlated providing further evidence for entropic stabilization over general solubility arguments. [ABSTRACT FROM AUTHOR]

Functional thin film superlattices with stability in extreme environments can lead to transformative performance in optical and thermal applications such as thermophotovoltaics. In this work, key issues associated with defects that prevent layer-by-layer growth in epitaxial, low-miscibility oxide superlattices are investigated. Layer protrusions, approximately 8 nm wide and 3 nm thick, arise from a strain relaxation mechanism in 8 nm bilayer superlattices of Ba(Zr0.5Hf0.5)O3/MgO and propagate through the subsequent superlattice layers forming an inverted pyramid structure that is spatially phase offset from the matrix. The density and size of these defects scales with the number of interfaces in the sample, indicating that surface roughness during growth is a significant factor in the formation of these defects. In situ high temperature transmission electron microscopy (1000 °C, in vacuo) measurement reveals that phase decomposition of Ba(Zr0.5Hf0.5)O3 and decoherence of the superlattice is nucleated by these defects. This work highlights that achieving optimum growth conditions is imperative to the synthesis of single-crystalline superlattices with sharp interfaces for optimized performance in extreme environments. [ABSTRACT FROM AUTHOR]

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO2), a water-insoluble GeO2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga2O3. The subsequent realization of single-crystalline r-GeO2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties. [ABSTRACT FROM AUTHOR]

We report on the demonstration of ferroelectricity in ScxAl1-xN grown by molecular beam epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for ScxAl1-xN films with Sc contents in the range of 0.14–0.36. Sc0.20Al0.80N, which is nearly lattice-matched with GaN, exhibiting a coercive field of ∼ 4.2 MV/cm at 10 kHz and a remnant polarization of ∼135 μC/cm2. After electrical poling, Sc0.20Al0.80N presents a polarization retention time beyond 105 s. No obvious fatigue behavior can be found with up to 3 × 105 switching cycles. The work reported here is more than a technical achievement. The realization of ferroelectric single-crystalline III–V semiconductors by molecular beam epitaxy promises a thickness scaling into the nanometer regime and makes it possible to integrate high-performance ferroelectric functionality with well-established semiconductor platforms for a broad range of electronic, optoelectronic, and photonic device applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • A type-I band alignment was determined for Y 0.07 Al 0.93 N/GaN heterojunction. • Demonstration of YAlN-based HEMT with remarkable carrier transport properties. • Identification of key factors impacting temperature-dependent transport properties. Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and significantly enhanced linear and nonlinear optical properties. Yttrium (Y), a Sc substitute, is also capable of similar properties when alloyed with III-nitride materials, but its potential has remained largely unexplored. In this study, we present the first experimental investigation into the energy band gap alignment and transport properties of a YAlN based high-electron-mobility transistor (HEMT) structure. Our measurements revealed a type-I band alignment for the Y 0.07 Al 0.93 N/GaN heterojunction, with a small valence band offset of −0.1 eV and conduction band offset of 2.2 eV. We then developed a novel Y 0.07 Al 0.93 N/AlN/GaN heterojunction-based HEMT and evaluated its transport properties. A mobility of 1000 cm2/Vs, a sheet electron concentration of 4.2 × 1013 cm2, and a sheet resistance of 148 Ω/□ were measured at room temperature, which are among the best values reported for rare earth element-containing nitride epitaxial heterostructures. We have further performed temperature-dependent Hall measurements and identified the dominant factors affecting transport properties at different temperature ranges. The excellent electrical characteristics and compatibility with mainstream semiconductor technology represent a significant step forward in the development of next-generation multifunctional HEMTs. [ABSTRACT FROM AUTHOR]

We propose a heterostructure device comprised of magnets and piezoelectrics, which significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low-voltage operation, nonreciprocity, nonvolatility, cascadability, and thermal reliability of the original ASL device. Moreover, by utilizing the deterministic switching of a magnet from the saddle point of the energy profile, the device is more efficient in terms of energy and delay and is robust to thermal fluctuations. The results of simulations show that compared to ASL devices, the proposed device achieves $21\times $ shorter delay and $27\times $ lower energy dissipation per bit for a 32-bit arithmetic-logic unit. [ABSTRACT FROM AUTHOR]

We report an initial experimental survey of spin Hall torques generated by the rare-earth metals Gd, Dy, Ho, and Lu, along with comparisons to first-principles calculations of their spin Hall conductivities. Using spin torque ferromagnetic resonance (ST-FMR) measurements and dc-biased ST-FMR, we estimate lower bounds for the spin Hall torque ratio, ξSH, of ≈0.04 for Gd, ≈0.05 for Dy, ≈0.14 for Ho, and ≈0.014 for Lu. The variations among these elements are qualitatively consistent with results from first principles [density-functional theory (DFT) in the local density approximation with a Hubbard-U correction]. The DFT calculations indicate that the spin Hall conductivity is enhanced by the presence of the partially filled ƒ orbitals in Dy and Ho, which suggests a strategy to further strengthen the contribution of the ƒ orbitals to the spin Hall effect by shifting the electron chemical potential. [ABSTRACT FROM AUTHOR]

The carrier effective mass plays a crucial role in modern electronic, optical, and catalytic devices and is fundamentally related to key properties of solids such as the mobility and density of states. Here we demonstrate a method to deterministically engineer the effective mass using spatial confinement in metallic quantum wells of the transition metal oxide IrO2. Using a combination of in situ angle-resolved photoemission spectroscopy measurements in conjunction with precise synthesis by oxide molecular-beam epitaxy, we show that the low-energy electronic subbands in ultrathin films of rutile IrO2 have their effective masses enhanced by up to a factor of 6 with respect to the bulk. The origin of this strikingly large mass enhancement is the confinement-induced quantization of the highly nonparabolic, three-dimensional electronic structure of IrO2 in the ultrathin limit. This mechanism lies in contrast to that observed in other transition metal oxides, in which mass enhancement tends to result from complex electron-electron interactions and is difficult to control. Our results demonstrate a general route towards the deterministic enhancement and engineering of carrier effective masses in spatially confined systems, based on an understanding of the three-dimensional bulk electronic structure. [ABSTRACT FROM AUTHOR]