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We propose a new design of the atom bottom-up technique that uses an optical trapping tool to form the atom trapping layer within a thin film grating. By using a PANDA ring resonator, where atoms can be trapped, pumped and controlled by light, where finally, the trapped atoms/molecules can be selected, filtered, and embedded within the required thin film grating layers, which later can form the nanobattery. In application, P-type or N-type atom can be prepared, trapped and embedded within the desired thin film layers, where finally, the nanobattery can be manipulated. The theoretical background of light pulse in a PANDA ring resonator is also reviewed. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1097-1100, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26691 [ABSTRACT FROM AUTHOR]

In this paper, an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity is designed and proposed. Two essential aspects of this novel device have been investigated, which include the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. The vertical-reflection-type switches have been investigated with an asymmetric cavity that consists of 12 periods of GaAs/Al0.8Ga0.2As and 25 periods for the front and back mirrors, respectively. The thicknesses of the GaAs and AlGaAs layers are chosen to be 89 and 102 nm, respectively. To give a dot-in-a-well (DWELL) structure, the 65 nm dimension of Si was recommended to deposit within a 20 nm AlAs QW. Results obtained have shown that all-optical switching via the QD excited states has been achieved with a time constant down to 275-fs and over 29.5 nm tunable wavelengths. These results demonstrated that QDs within a vertical cavity have great potential to realize low-power, consumption polarization-insensitive and micrometer-sized switching devices for future optical communication and signal processing systems. [ABSTRACT FROM AUTHOR]

In present work, an inorganic dopant TiO2 nanoparticles are introduced into the PDPP3T polymer host material and deposited as thin films via spin coating. Different solvent are investigated to get efficient dispersion of TiO2 nanoparticles as well as effective dissolution of PDPP3T material. The role of TiO2 particles towards optical absorption of PDPP3T material is studied by preparing different PDPP3T/TiO2 blend ratios and annealed at different temperatures. Toluene is found an efficient solvent for the dispersion of TiO2 nanoparticles as well as dissolution of PDPP3T material. Significant increase in optical absorption in UV region 300-400nm is observed for the PDPP3T/TiO2 blend ratio 1:0.2 and the annealing temperature 310oC. The deposited thin film with four layers have demonstrated significant blue shift in peak wavelength and increase in the absorption in UV region (300-400nm). XRD analysis reveals amorphous nature of all deposited thin film. No significant variations in chemical structure are observed with increase in thickness of deposited layer. The addition of TiO2 particle in PDPP3T material significantly enhanced the optical absorption in UV region. [ABSTRACT FROM AUTHOR]