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Topological insulator materials like HgTe exhibit unique electronic properties at their interfaces and so peculiar attention has to be paid concerning the growth optimization. Molecular beam epitaxy of tensile-strained HgTe/CdTe is investigated as a function of the growth temperature. Crystal quality is checked by using high resolution X-rays diffraction. By combining several material characterization techniques such as scanning transmission electronic microscopy, time-of-flight secondary ion mass spectroscopy and X-rays reflectivity, we report sharp interface morphology with nanometer-scale Hg/Cd diffusion lengths. [ABSTRACT FROM AUTHOR]

Abstract: Rutherford backscattering experiments under channeling conditions (RBS-c) have been carried out on Hg0.77Cd0.23Te (MCT) layers implanted with arsenic. Accurate damage profiles have been extracted through a simple formalism for implanted and annealed layers. Quantitative damage profiles are correlated with structural defects observed by bright-field scanning transmission electron microscopy (BF-STEM) and chemical composition measured by secondary ion mass spectrometry (SIMS). Evolution of damage for increasing ion implantation fluence has been investigated by these three complementary techniques. Evidence is found of irradiation induced annealing during implantation. A fast damage recovery has been observed for post-implantation thermal anneals. In the case of an implanted layer annealed during 1h, the damage profile, associated with arsenic concentration measurements, indicates the presence of complexes involving arsenic. [Copyright &y& Elsevier]

Abstract: Electron back-scattering diffraction (EBSD) can be successfully performed on SiC coatings for HTR fuel particles. EBSD grain maps obtained from thick and thin unirradiated samples are presented, along with pole figures showing textures and a chart showing the distribution of grain aspect ratios. This information is of great interest, and contributes to improving the process parameters and ensuring the reproducibility of coatings. [Copyright &y& Elsevier]