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As the trend towards the densification of integrated circuit (IC) devices continues, the complexity of interfaces involving dissimilar materials and thermo-mechanical interactions has increased. Highly integrated systems in packages now comprise numerous thin layers made from various materials. The interfaces between these different materials represent a vulnerable point in ICs due to imperfect adhesion and stress concentrations caused by mismatches in thermo-mechanical properties such as Young's modulus, coefficients of thermal expansion (CTE), and hygro-swelling-induced expansion. This study investigates the impact of thermal variations on the fracture behavior of three bi-material interfaces used in semiconductor packaging: epoxy molding compound–silicon (EMC–Si), silicon oxide–polyimide (SiO2–PI), and PI–EMC. Using double cantilever beam (DCB) tests, we analyzed these interfaces under mode I loading at three temperatures: −20 °C, 23 °C, and 100 °C, under both quasi-static and cyclic loading conditions. This provided a comprehensive analysis of the thermal effects across all temperature ranges in microelectronics. The results show that temperature significantly alters the failure mechanism. For SiO2–PI, the weakest point shifts from silicon at low temperatures to the interface at higher temperatures due to thermal stress redistribution. Additionally, the fracture energy of the EMC–Si interface was found to be highly temperature-dependent, with values ranging from 0.136 N/mm at low temperatures to 0.38 N/mm at high temperatures. SiO2–PI's fracture energy at high temperature was 42% less than that of EMC–Si. The PI–EMC interface exhibited nearly double the crack growth rate compared to EMC–Si. The findings of this study provide valuable insights into the fracture behavior of bi-material interfaces, offering practical applications for improving the reliability and design of semiconductor devices, especially in chip packaging. [ABSTRACT FROM AUTHOR]

Chip packaging engineering has evolved significantly to meet the performance demands of integrated circuits (IC) and micro-electromechanical systems (MEMS). Layers, mainly composed of metals, ceramics, and polymers are utilized to safeguard circuits and facilitate electrical connections. While, mechanical testing ensures bonding properties and reliability of bi-material interfaces in these components, there is a lack of discussion on the advantages and disadvantages of different test methods. Environmental factors, notably humidity and temperature, pose significant challenges, with a gap in understanding each condition's impact on interfaces. This review aims to provide comprehensive insights into the mechanical characterization of bi-material interfaces and their response to environmental conditions. It's divided into two main parts: a review of mechanical approaches in characterizing bi-material interfaces, including strength and quasi-static fracture tests and the presentation of test results considering temperature and humidity influence. The paper highlights the effects of humidity and high temperatures on the interface fracture energy, primarily due to the properties of polymeric materials in packaging for different interfaces. Additionally, it offers a summarized approach for selecting testing setups based on the desired interface. [ABSTRACT FROM AUTHOR]

Semiconductor advancements demand greater integrated circuit density, structural miniaturization, and complex material combinations, resulting in stress concentrations from property mismatches. This study investigates the failure in two types of interfaces found in chip packages: silicon–epoxy mold compound (EMC) and polyimide–EMC. These interfaces were subjected to quasi-static and fatigue loading conditions. Employing a compliance-based beam method, the tests determined interfacial critical fracture energy values, ( G I C ), of 0.051 N/mm and 0.037 N/mm for the silicon–EMC and polyimide–EMC interfaces, respectively. Fatigue testing on the polyimide–epoxy interface revealed a fatigue threshold strain energy, ( G t h ), of 0.042 N/mm. We also observed diverse failure modes and discuss potential mechanical failures in multi-layer chip packages. The findings of this study can contribute to the prediction and mitigation of failure modes in the analyzed chip packaging. The obtained threshold energy and crack growth rate provide insights for designing safe lives for bi-material interfaces in chip packaging under cyclic loads. These insights can guide future research directions, emphasizing the improvement of material properties and exploration of the influence of manufacturing parameters on delamination in multilayer semiconductors. [ABSTRACT FROM AUTHOR]

Examining crack propagation at the interface of bimaterial components under various conditions is essential for improving the reliability of semiconductor designs. However, the fracture behavior of bimaterial interfaces has been relatively underexplored in the literature, particularly in terms of numerical predictions. Numerical simulations offer vital insights into the evolution of interfacial damage and stress distribution in wafers, showcasing their dependence on material properties. The lack of knowledge about specific interfaces poses a significant obstacle to the development of new products and necessitates active remediation for further progress. The objective of this paper is twofold: firstly, to experimentally investigate the behavior of bimaterial interfaces commonly found in semiconductors under quasi-static loading conditions, and secondly, to determine their respective interfacial cohesive properties using an inverse cohesive zone modeling approach. For this purpose, double cantilever beam specimens were manufactured that allow Mode I static fracture analysis of the interfaces. A compliance-based method was used to obtain the crack size during the tests and the Mode I energy release rate ( G I c ). Experimental results were utilized to simulate the behavior of different interfaces under specific test conditions in Abaqus. The simulation aimed to extract the interfacial cohesive contact properties of the studied bimaterial interfaces. These properties enable designers to predict the strength of the interfaces, particularly under Mode I loading conditions. To this extent, the cohesive zone modeling (CZM) assisted in defining the behavior of the damage propagation through the bimaterial interfaces. As a result, for the silicon–epoxy molding compound (EMC) interface, the results for maximum strength and G I c are, respectively, 26 MPa and 0.05 N/mm. The second interface tested consisted of polyimide and silicon oxide between the silicon and EMC layers, and the results obtained are 21.5 MPa for the maximum tensile strength and 0.02 N/mm for G I c . This study's findings aid in predicting and mitigating failure modes in the studied chip packaging. The insights offer directions for future research, focusing on enhancing material properties and exploring the impact of manufacturing parameters and temperature conditions on delamination in multilayer semiconductors. [ABSTRACT FROM AUTHOR]