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The stability and performance challenges in conventional 3D perovskite solar cells (PSCs), attributed to perovskite structure and transport layers, prompt the exploration of 2D perovskites. However, the presence of transport layers and conventional contacts is still challenging as it creates interface defects and pinholes. In this study, a new transport‐layer‐free device structure, i.e., MXene–2D perovskites–MXene‐based metal–semiconductor–metal PSCs, is introduced to resolve the stability‐ and performance‐related issues. The proposed solar cell incorporates PeDAMAPb2I7 as the absorber layer and MXenes (Hf2NF2/Ta4C3F2) as electrodes. The Dion–Jacobson perovskites solar cell is also investigated for optimum thickness and defect tolerance level of PeDAMAPb2I7. In the results, it is indicated that the device delivered the maximum efficiency of 5.63% at a 500 nm thick absorber layer with a defect density of 1 × 1013 cm−3. Further, the quest to find suitable MXene contact for electron extraction is met by analyzing the proposed solar cell with nine different MXene layers (Hf2NF2, Hf2CF2, Zr2NF2, Ta2CF2, Ti4C3, Ti3C2, Zr2C, Sc2C, Ti2C). In the results, it is indicated that Hf2NF2 has a 3.2 eV work function, making it the optimal choice, achieving 5.63% efficiency. [ABSTRACT FROM AUTHOR]

Lead-free perovskite (LFP) materials are leading the photovoltaic (PV) market due to their nontoxic nature and good optoelectronic properties. It also increases the reliability and stability of perovskite solar cells (PSC). However, the performance of such materials is not upto the mark due to some inherent losses. Therefore, in this paper, the concept of a two-terminal monolithic tandem solar cell is utilized to mitigate the non-absorbed photon loss of the lead-free wide bandgap (1.8 eV) halide (WBH) PSC. For efficient absorption of top cell filtered spectrum, bottom cell has been designed with CZTSSe (1.1 eV) as active layer and tin (II) sulfide (Sn2S3) as back surface layer. Both LFP based top cell and CZTSSe based bottom cell have been analyzed under standalone conditions. Thereafter, to analyse the tandem configuration top cell is illuminated with AM1.5 G spectrum while for the bottom cell the unabsorbed spectrum by top cell has been used. To account for the mandate requirement of tandem cell designing current matching approach is utilized and LFP-CZTSSe tandem solar cell has been designed to deliver an efficiency of 16.6%. The obtained result shows the best current matching condition at 380 nm thick LFP and 550 nm thick CZTSSe, respectively, with a short circuit current density (JSC) of 14.9 mA/cm2. The final tandem device showed the power conversion efficiency of 16.6% with an open-circuit voltage (VOC) of 1.7 V. The obtained conversion efficiency is higher compared to till date experimental standalone conversion efficiency of LFP solar cells. Therefore, the proposed LFP-CZTSSe tandem solar cell would be a strong candidate in the PV industry delivering high efficiency at a cheap cost. [ABSTRACT FROM AUTHOR]

2D-perovskite has attracted notable interest for its ability to address the stability challenges related to traditional 3D-perovskite. Using proper contacts for 2D-perovskites is crucial to effectively eliminate pinhole creation and collect carriers. Therefore, in this study, MXene contacts have been employed with 2D-DJ-perovskite (DJP) solar cells to combine both benefits, resulting in enhanced stability, superior charge transport, and tunable energy levels without pinhole effects. Further, to improve efficiency and mitigate transmission-thermalization losses, this work also harnesses the remarkable tunable bandgap property of the DJ-P. The DJ-P layer's bandgap is adjusted by modifying its composition in this work. This is achieved by varying the number of inorganic layers (n) within the (PeDA)(MA) n-1 Pb n I 3n+1 , perovskite structure, ranging from 1 to 6 across the thickness of the DJ-P layer. Linear, parabolic, beta, and power law-grading profiles are employed in the DJP solar cell to determine the optimal composition for the DJ-P layer. The results demonstrate that power law grading yields the highest efficiency, reaching a maximum of 17.47 % with 1.05 V V OC. [ABSTRACT FROM AUTHOR]

• A novel sensor design employs a hetero-material arsenide/antimonide tunneling interfaced junctionless TFET. • Reduced drain current upon gas analyte exposure demonstrates effective gas detection. • Significantly improved sensitivity correlates with the notable disparity in Pd's work function. • Material-specific response uncovers distinct sensitivities and response profiles of Mo and Ag-based sensors. • The proposed sensor holds potential for diverse applications in environmental and industrial monitoring. This study presents a numerical analysis of a highly sensitive catalytic metal gate-based gas sensor utilizing a hetero-material arsenide/antimonide tunneling interfaced junctionless Tunnel Field-Effect Transistor (H-JLTFET). The sensor is designed to detect hydrogen, oxygen, and ammonia gases by modulating the work function of catalytic metals (Pd, Ag, and Mo) upon gas molecule adsorption. Simulation outcomes reveal the efficacy of the proposed sensor design across varying gas pressure levels. Once exposed to gas analytes, the drain current of the sensor declines specifying effective gas detection. Additionally, increased gas pressure improves gas molecule adsorption rate, and elevate polarized charge density. It leads to escalate the work function of catalytic metals yielding a greater threshold voltage (V fb) and inferior drain current. The estimation of sensitivity comprehends assessing current switching ratio (I ON /I OFF) of the sensor at various metal work functions and pressure levels. Notably, a substantial improvement in sensitivity is observed with a huge disparity in Pd's work function, ending at 3.80 × 108, thereby emphasising its vital role in amplifying the sensor's response to hydrogen gas. Furthermore, relative investigation has been done for Mo and Ag-based sensors divulging distinct sensitivities and response profiles to their respective gases. The sensor reveals maximum sensitivity of 1.29 × 108 and 8.87 × 107 for oxygen and ammonia gas, respectively, accentuating the significance of material choice in optimizing gas sensor performance for miscellaneous environmental monitoring and industrial applications. Overall, this research participates in the advancement of gas sensing technology, proposing insights into the framework and optimalization of immensely sensitive and selective gas sensors for concrete applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • Stability concerns of 3D perovskites are addressed by using 2D layer perovskites. • MXene contacts are used to mitigate the pinhole effects in perovskite solar cells. • The thickness of the BDA active layer varies with different MXene compositions. • In order to reduce thermalization and transmission losses, grading of a BDA DJ-perovskite layer is performed. • The results show that 24.6 % efficiency can be achieved with 1 µm thick BDA. In the midst of the growing emphasis on renewable energy sources, there is an urgent requirement for materials that are devoid of lead and non-toxic, aligning with the demands of the 21st century. In this regard, the perovskite solar cells present themselves as a compelling option, offering cost-effectiveness and non-toxic nature. Nevertheless, these 3D perovskite materials encounter stability challenges. To mitigate these issues, 2D DJ (Dion Jacobson) perovskite material-based solar cells are increasingly utilized in contemporary applications. In this work, (BDA)(MA) n−1 Pb n I 3n+1 -based 2D DJ perovskite solar cells (BDPSC) are investigated. Further, it is crucial to use proper contact with BDPSC in order to eliminate the pinhole effect. Therefore, in this study, MXene contacts have been employed with BDPSC to combine the benefits of both, resulting in enhanced stability, superior charge transport, and tunable energy levels without pinhole effects. Further, the bandgap of the BDA active layer is adjusted by varying the number of inorganic layers (n) from 1 to 6 within the (BDA)(MA) n−1 Pb n I 3n+1. Firstly, the thickness of the BDA active layer along with different MXene are varied for all the possible compositions of the (BDA)(MA) n−1 Pb n I 3n+1. The result shows that the optimized thickness for the BDA layer is 1 µm, and the work function value of the left/right contact MXene is 3.56/5.65 eV. Additionally, this work also investigates the influence of grading on the PV performance of BDPSC. The result shows that the reported BDPSC can deliver a maximum open circuit voltage (V OC) is 1.18 V, short circuit current density (J SC) is 24.58 mA/cm2, Fill Factor (FF) is 84.96 % and efficiency is 24.58 %. [ABSTRACT FROM AUTHOR]

In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed using a rigorous quantum simulation. This latter self-consistently solves the Poisson equation with the mode space (MS) non-equilibrium Green's function (NEGF) formalism in the ballistic limit. The adopted photosensing principle is based on the light-induced photovoltage, which alters the electrostatics of the carbon-based junctionless nano-phototransistors. The investigations included the photovoltage behavior, the I-V characteristics, the potential profile, the energy-position-resolved electron density, and the photosensitivity. In addition, the subthreshold swing–photosensitivity dependence as a function of change in carbon nanotube (graphene nanoribbon) diameter (width) was thoroughly analyzed while considering the electronic proprieties and the quantum physics in carbon nanotube/nanoribbon-based channels. As a result, the junctionless paradigm substantially boosted the photosensitivity and improved the scaling capability of both carbon phototransistors. Moreover, from the point of view of comparison, it was found that the junctionless graphene nanoribbon field-effect phototransistors exhibited higher photosensitivity and better scaling capability than the junctionless carbon nanotube field-effect phototransistors. The obtained results are promising for modern nano-optoelectronic devices, which are in dire need of high-performance ultra-miniature phototransistors. [ABSTRACT FROM AUTHOR]

Although Tunnel Field Effect Transistors (TFET) offer low leakage current and allow good scalability, but they suffer from low ON-current. Present research paper focuses on the designing of an industry ready TFET that can operate efficiently at nano-scales allowing the fabrication of a smaller and more energy efficient overall device. To achieve the same, the Gate Metal Engineering (GME) and n+ Source Pocket (SP) schemes have been integrated on Double-Gate TFET (DG-TFET). For a distinct examination of the merits of GME and SP, 4 types of TFET architectures, namely the DG-TFET, GME-DG-TFET, SP-DG-TFET and GME-SP-DG-TFET (which amalgamates the merits of both GME and SP engineering) are investigated. All these device architectures are examined in terms of their electrical characteristics and analog parameters. GME-SP-DG-TFET (being superior among the four) is further analyzed under the presence of interface fixed charges (FC) of different polarity to affirm its reliability. Investigations of this device structure reveal that the positive FC are more noxious for the device as compared to negative FC. However, the enhanced flatband voltage under the negative FC translates to the high gate bias requirement to turn the device ON. Observance of only marginal variations in the parasitic capacitances and efficiency of the GME-SP-DG-TFET device in the presence of FC (both positive/negative) signifies its immunity and promises enhanced reliability. A remarkable improvement of the ION/IOFF by two order of magnitude (from 1010 to 1012) and a decrease in Vth by 27.71% observed for GME-SP-DG-TFET as compared to DG-TFET along with the improved reliability makes the former an efficient candidate for low power analog/RF applications. [ABSTRACT FROM AUTHOR]

The major losses that limit the efficiency of a single-junction solar cell are thermalization loss and transmission loss. Thus, to efficiently utilize the full solar spectrum and to mitigate these losses, tandem solar cells (TSC) have significantly impacted the photovoltaic (PV) landscape. In this context, the research on perovskite/silicon tandems is currently dominating the research community. The stability improvements of perovskite materials and mature fabrication techniques of silicon have underpinned the rapid progress of perovskite/silicon TSC. However, the low absorption coefficient and high module cost of the silicon are the tailbacks for the mass production of perovskite/silicon TSCs. Therefore, PV technology demands to explore some new materials other than Si to be used as absorber layer in the bottom cell. Thus, here in this work, to mitigate the aforementioned losses and to reduce cost, a 23.36% efficient two-terminal perovskite-PbS CQD monolithic tandem solar cell has been designed through comprehensive device simulations. Before analyzing the performance of the proposed TSC, the performance of perovskite top cells has been optimized in terms of variation in optical properties, thickness, and interface defect density under standalone conditions. Thereafter, filtered spectrum and associated integrated filtered power by the top cell at different perovskite thickness from 50 to 500 nm is obtained to conceive the presence of the top cell above the bottom cell with different perovskite thickness. The current matching by concurrently varying the thickness of both the top and bottom subcell has also been done to obtain the maximum deliverable tandem JSC for the device under consideration. The top/bottom subcell with current matched JSC of 16.68 mA cm−2/16.62 mA cm−2 showed the conversion efficiency of 14.60%/9.07% under tandem configuration with an optimized thickness of 143 nm/470 nm, where the top cell is simulated under AM1.5G spectrum, and bottom cell is exposed to the spectrum filtered by 143 nm thick top cell. Further, the voltages at equal current points are added together to generate tandem J–V characteristics. This work concludes a 23.36% efficient perovskite-PbS CQD tandem design with 1.79 V (VOC), 16.67 mA cm−2 (JSC) and 78.3% (FF). The perovskite-PbS CQD tandem device proposed in this work may pave the way for the development of high-efficiency tandem solar cells for low-cost applications. [ABSTRACT FROM AUTHOR]

• Bandgap engineering scheme has been implemented to improve the PV performance of lead-free all inorganic perovskite CsSnI 3-x Br x based solar cell. • The results shows that linear grading achieves a maximum PCE of 21.68%. • Parabolic grading while varying bowing factor from 0 to 1 has attained a PCE of 23.61%. • Further, different ETLs and HTLs are investigated to check the compatibility. • The SnO 2 / PEDOT identified as best ETL and HTL and delivered PCE of 24.30%. In the modern era of technology, worldwide paradigms have been shifted toward the utilization of green energy. Sun energy is the most astonishing eco-friendly resource of energy and can be harnessed with the help of photovoltaic cells. Hybrid (Organic-Inorganic) perovskite solar cells (PSCs) are emerged with incredible photovoltaic (PV) performance. Nevertheless, a significant challenge lies in their lower stability under diverse environmental conditions. To deal with this challenge, all inorganic cesium-based PSC has been studied and analyzed, results improved stability in comparison to hybrid PSC. However, the noxious nature of lead is deleterious to the environment. So, this work primarily aimed, to study lead-free all inorganic tin-based perovskite compound CsSnI 3-x Br x , as the main light absorber layer. Further, to elevate the PV performance of PSC, bandgap grading is performed on CsSnI 3-x Br x by varying bromide concentration x from 0 to 3. Bandgap grading encourages the absorption of a wide range of the light spectrum, by modulating bandgap (E g) / affinity(χ) through the distance of the CsSnI 3-x Br x layer. Additionally, it enhances light-generated charge carrier separation and collection by end electrodes. In this work, two different strategies have been adopted, linear and parabolic. During linear grading, the impact of variation in x (0 to 3) has been analyzed over the thickness 50–––500 nm in 10 linear steps for CsSnI 3-x Br x. The highest PCE fetched from linearly graded layered FTO / CeO 2 / CsSnI 3-x Br x / CFTS / Gold PSC is 21.68 %. Similarly, in the parabolic graded absorber layer, the influence of change in the bowing factor (0 to 1), has been analyzed relative to different values of x (0 to 3). With improvement in PV performance, the maximum PCE delivered by parabolic-graded PSC is 23.61 %. Additionally, this work extends to check the compatibility of distinct electron transport layers (ETLs) and hole transport layers (HTLs). Upon analysis, it has been found that the best PV performance was obtained while selecting SnO 2 / PEDOT as ETL / HTL respectively. [ABSTRACT FROM AUTHOR]

[Display omitted] • Ag-doped Cu 2 ZnSnS 4 (CAZTS) solar cell has been explored, with varying Ag concentrations (x = 0, 0.1, 0.2, 0.3, 0.4) in the composition (Cu 1−x Ag x) 2 ZnSnS 4. • To address back surface recombination, a Sn 2 S 3 layer was introduced as a back surface field layer in CAZTS solar cells. • The efficiency enhancement employs a bandgap grading approach, elevating efficiency from 15.8% to 24.7% compared to without a graded device. • The optimization of thickness, total defect density and doping of the CAZTS layer has been investigated. • Results showed a maximum efficiency of 27.3 % at a doping value of 1 × 1016 cm−3. The Ag-doped Cu 2 ZnSnS 4 (CAZTS) based solar cell has been explored, with varying Ag concentrations (x = 0, 0.1, 0.2, 0.3, 0.4) in the composition (Cu 1−x Ag x) 2 ZnSnS 4. In order to mitigate back surface recombination in CAZTS-based solar cells, a Sn 2 S 3 layer has been incorporated as a back surface field (BSF). Further, the efficiency enhancement employs a bandgap grading approach, elevating efficiency from 15.8 % to 24.7 % compared to devices without the graded structure. Additionally, the thickness and total defect density of the CAZTS layer are optimized. The result demonstrates that the optimized value of the CAZTS layer's thickness is 1.1 µm, and the defects are 1 × 1012 cm−3. To further enhance the performance, the doping variation of the CAZTS layer has also been investigated. The findings indicate that the maximum efficiency of 27.32 % is attained with a doping value of 1 × 1016 cm−3. [ABSTRACT FROM AUTHOR]

• Explored 3T-APTSC to overcome single-junction solar cell limitations, especially the SQ limit. • Demonstrated the superiority of three-terminal tandems, optimizing current matching and allowing independent adjustments. • Optimized PV parameters for 3T-APTSC: V OC 3.76 V, J SC 10.70 mA/cm2, FF 69.00 %, PCE 26.24 %. Despite numerous publications on two-junction tandems using SCAPS-1D simulation, there is a gap in research regarding three-junction tandems. This paper explores the advantages of three junction all-perovskite tandem solar cells (3J-APTSC) where we introduce a new methodology utilizing two-step filtered spectrum and current matching techniques in SCAPS-1D to design realistic tandem solar cells. Crucial steps involve determining filtered spectrum and current matching points among sub-cells for tandem optimization. Our designed three-terminal tandem solar cell exhibits promising photovoltaic parameters, including V OC : 3.76 V, J SC : 10.70 mA/cm2, FF: 69.00 %, and PCE: 26.24 %, achieved through optimized active layer thicknesses. This thorough examination of 3J-APTSC offers insights that could drive the future development of highly efficient tandem solar cells. [ABSTRACT FROM AUTHOR]

• Cs₂CuBiCl₆ based perovskite solar cell explored. • Optimization of thickness, density and doping performed. • Machine learning models (XGBoost, RF) implemented for PCE prediction. • XGB outperforms RF (R-squared: 99.97 %, low MSE: 0.0014). Conventional perovskite materials offer reasonable power conversion efficiency (PCE) but are plagued by stability issues. To address this, researchers have explored alternative materials, such as MA and FA-based lead or lead-free perovskites, known for their improved PCE and stability. In this study, we focused on a cesium (Cs)-based cell, Cs₂CuBiCl₆, which not only exhibits acceptable PCE but also demonstrates superior stability compared to traditional perovskite materials. To optimize the Cs₂CuBiCl₆-based cell, we conducted simulations varying parameters like thickness, bulk defect density (BDD), and doping. The optimized PCE for the Cs₂CuBiCl₆-based cell reached 10.30 %. We generated 1000 datasets through simulations, which serve as input for machine learning (ML) algorithms, including random forest (RF) and XGboost (XGB). The XGB model outperformed the RF model, achieving a higher R-squared value (R2: 99.97 %) and a lower mean squared error (MSE: 0.0014). [ABSTRACT FROM AUTHOR]

Conventional perovskite-based solar cells (PSCs) have emerged as promising candidates for next-generation solar energy due to their remarkable features, including a high absorption coefficient, tunable bandgaps, high mobility, low maintenance cost, and high power conversion efficiency (PCE). However, the major bottleneck in commercialization of conventional PSCs is their poor stability (of few days), and toxicity concerns (due to lead content). To address these challenges cesium-based perovskites are widely adopted by researchers. However, detailed understanding of these devices considering several device parameters and their connection with overall PCE is not comprehensively disclosed in previous findings. Therefore, in this study, the PV performance of six (6) different PSCs with Cs-based absorber layer (CAL) viz. CsPbI 3 , CsPbBr 3 , CsSnCl 3 , CsSnI 3 , Cs 2 AgBiBr 6 and CsSn 0.5 Ge 0.5 I 3 has been investigated through SCAPS simulator, followed by developing few machine learning models to forecast the efficiency. Total 2160 dataset has been obtained by varying the absorber layer, thickness, and doping and defect density for training and testing the five different machine learning algorithms such as linear regression (LR), support vector regression (SVR), neural network (NN), random forest (RF), and XGBoost (XGB). The XGB algorithm outperforms other approaches, achieving an impressive R2 of 99.99 % and low MSE of 0.0006. Impact of each input variable on the efficiency is also obtained by generating SHAP plot for each model which revealed that absorber layer and it thickness variation greatly affected the PCE and least impact of doping is observed on PCE. Among all the absorbers, CsPbI 3 shows promising performance by delivering a maximum PCE of 14.00 %. Results reported in this work along with developed ML models may pave the way in the development of Cs based PSCs without the need of complex device simulations. • Investigated six different PSCs with Cs-based materials CsPbI 3 , CsPbBr 3 , CsSnCl 3 , CsSnI 3 , Cs 2 AgBiBr 6 and CsSn 0.5 Ge 0.5 I 3. • Five different supervised machine learning models are employed on 2160 datasets using Python. • SHAP plots are generated to visualize the impact of each feature on the conversion efficiency. • XGB outperformed other algorithms, achieving an impressive R2 value of 99.99 % and a low MSE of 0.0006. [ABSTRACT FROM AUTHOR]

Tunnel field effect transistors (TFETs) are generating considerable interest in switching applications due to their steep-subthreshold slope achieved by the quantum mechanical tunneling as a switching mechanism. However, all TFET structures currently in vogue based on Si, Ge or III–V materials have not been able to satisfy the other stringent requirements like higher on current (ION) and low cost of fabrication. We, in this paper, report a cost-effective, organic–inorganic hybrid perovskite CH3NH3PbI3 material-based DG–DL TFET (labeled as MAPbI3–DG–DL TFET hereinafter) which has been shown to adapt to the advantages of the double gate (DG) and doping less (DL) technique for better electrostatic control and low thermal budget respectively. In simulations conducted using Silvaco Atlas tool at room temperature and supply voltage of 1 V on the proposed device structure, we have been able to achieve subthreshold swing of 27.33 mV decade−1, cut-off frequency of 0.268 THz and switching ratio of 1.85 × 1011. Detailed explanations of the results provided in the paper tend to establish that MAPbI3–DG–DL TFET could be a suitable candidate for low-power and high-speed logic applications. [ABSTRACT FROM AUTHOR]

In conventional perovskite solar cells (PSCs), a thin active layer of perovskite is sandwiched between two charge transport layers (CTLs)–electron transport layer (ETL) and hole transport layer (HTL). CTLs help in extracting and navigating the photogenerated electron–hole (e-h) pairs to the respective electrodes. Although this phenomenon gives high-energy conversion efficiencies but leads to quite a few performances as well as fabrication challenges. The ways to partially overcome these challenges are to have a device without the need of having CTLs altogether and opting for the back-contact (BC) design for PSCs. Dipole fields (DFs) present at the metal perovskite interface may be thought for their possible utilization to have CTL-free BC PSC. However, the performance of such devices is limited by the difference between the metal work functions across the perovskite layer. In this article, we report the results for our studies to establish that an electrostatically doped DF-assisted metal perovskite metal back-contact (ED-DF-MPM) PSC structure has the ability to overcome the limitations of DF-assisted metal perovskite metal back-contact (DF-MPM) PSCs. As a part of the work carried out here, ED p-n-junction and corresponding built-in potential have been combined for DF-assisted extraction of generated carriers within the perovskite layer so as to enhance the collection probability and open-circuit voltage. Quantitively, 32.7%, 10.6%, and 8.6% improvement in short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) are obtained, respectively, which resulted in an observation of 59.4% improvement in power conversion efficiency (PCE) for ED-DF-MPM PSC compared to DF-MPM PSC. Besides that, the reported ED-DF-MPM PSC structure delivers the photovoltage and photocurrent of 659 mV and 14.19 mA ⋅ cm−2, respectively. The work reported in this article may pave the way for the development of “transport layer-free” ED scalable and low-cost PSCs in future. [ABSTRACT FROM AUTHOR]

Perovskite being a wide bandgap material has shown profound impact as an active material for the use of top cell in the tandem solar cell. However, finding a suitable low-bandgap material for the bottom cell of the perovskite associated tandem solar cell has always been a concern for researchers. Over the last decade, several materials for designing of the bottom cell have been reported as a combination to perovskite for superior efficiency. In this paper, a novel perovskite/Mg2Si based monolithic tandem solar cell is reported through numerical simulations using AFROS-HET v2.5. The reported device shows 25% efficiency prior to optimization. However, the structure of the device has been optimized to obtain better results in terms of efficiency by varying active layer thickness and using different electron/hole transport materials. About 8% improvement in efficiency has been noticed by the selection of optimum design parameters. Further, to account for the temperature reliability of the proposed design, the device is simulated for a temperature range of 300 K–450 K. This study highlights a drop-in open-circuit voltage (VOC) by a factor of about 0.1 V with an increase in temperature by about 50 K. Results clearly establish that structural and temperature variations significantly affect overall device performance. Results have been suitably analyzed so as to set a roadmap for further research work in this direction and explore the best of the characteristics of this unique tandem solar cell structure. [ABSTRACT FROM AUTHOR]

• All-perovskite tandem solar cell is designed and simulated. • 10.1% efficient, lead (Pb) free perovskite, Cs 2 AgBi 0.75 Sb 0.25 Br 6 (1.8 eV) based cell is used for top cell. • 14.2% efficient, low content Pb based perovskite, FACsPb 0.5 Sn 0.5 I 3 (1.2 eV) based cell is used for bottom cell. • Enhanced open circuit voltage (V OC = 1.83 V) is simulated in all-perovskite tandem design. • Optimized tandem design showed a conversion efficiency of 17.3%. Present research paper brings forth the results of simulation-based studies carried out on all-perovskite tandem (both top and bottom subcells made up of perovskites) multijunction devices. The all-perovskite tandem structure presented in this work employs a wide bandgap perovskite, i.e., Cs 2 AgBi 0.75 Sb 0.25 Br 6 (1.8 eV) and a narrow bandgap perovskite, i.e., FACsPb 0.5 Sn 0.5 I 3 (1.2 eV) as top and bottom cell respectively. An additional merit of the reported work is projection of lead (Pb)-free perovskite, Cs 2 AgBi 0.75 Sb 0.25 Br 6 and low Pb content-based perovskite, FACsPb 0.5 Sn 0.5 I 3 based tandem solar cell. The viability of proposed tandem design is performed in two steps firstly, 1.8 eV perovskite-based top cell is simulated and calibrated to fit the state-of-the-art conversion efficiency of 10.1%, and then, 1.2 eV perovskite-based bottom cell is simulated to have a calibrated efficiency of 14.2%. After calibrating the standalone (top and bottom) subcells, both the devices are evaluated for tandem configuration. The current matching conditions between the top and bottom cell is obtained at different thicknesses of the absorber layer in both top and bottom subcell. The optimized thickness for perovskite, 380 nm for top cell and 400 nm for bottom cell are obtained for tandem configuration. Top and bottom cells (fed with the filtered spectrum) reflect the conversion efficiency of 10.01% and 7.36%, respectively. Overall, tandem design showed a conversion efficiency of 17.3% owing to an enhancement in open-circuit voltage (V OC), which is 1.83 V. [ABSTRACT FROM AUTHOR]

SnS is rapidly gaining popularity as a promising material for developing solar technologies owing to its remarkable absorption coefficient, ability to reduce environmental effects, and streamlined manufacturing expenses. However, the SnS-based solar cells' efficiency is still limited due to interface losses. So, this study opens up a creative path by implementing the glancing angle deposition (GLAD) approach and introducing a CZTSSe layer with the goal of improving the performance of SnS-based solar cells. The deposition angle of the SnS layer and its effects on the bandgap properties of SnS solar cell are closely examined. The findings of this investigation offer valuable insights for enhancing the design of SnS-based solar cells and making them more efficient. The results show that by altering the deposition angle, the efficiency is enhanced from 7.83 % to 12.17 %. Additionally, to further boost the efficiency of the SnS solar cell, the thickness and doping concentration of the CZTSSe layer are also being analysed. The final efficiency of 14.02 % has been achieved with the open circuit voltage of 0.68 V for the SnS solar cell. • A novel approach was developed to enhance the efficiency of SnS-based solar cells. • The approach used the glancing angle deposition (GLAD) technique and a CZTSSe layer. • The addition of a CZTSSe layer reduced interface defects and improved efficiency. • The deposition angle of the SnS layer using the GLAD technique was examined. • The results showed a remarkable increase in efficiency, reaching 14.02 %. [ABSTRACT FROM AUTHOR]

Purpose: Adoption of integrated MOS based pseudo-resistor (PR) structures instead of using off-chip passive poly resistors for analog circuits in complementary metal oxide semiconductor technology (CMOS) is an area-efficient way for realizing larger time constants. However, issue of common-mode voltage shifting and excess dependency on the process and temperature variations introduce nonlinearity in such structures. So there is dire need to not only closely look for the origin of the problem with the help of a thorough mathematical analysis but also suggest the most suitable PR structure for the purpose catering broadly to biomedical analog circuit applications. Design/methodology/approach: In this work, incremental resistance (IR) expressions and IR range for balanced PR (BPR) structures operating in the subthreshold region have been closely analyzed for broader range of process-voltage-temperature variations. All the post-layout simulations have been obtained using BSIM3V3 device models in 0.18 µm standard CMOS process. Findings: The obtained results show that the pertinent problem of common-mode voltage shifting in such PR structures is completely resolved in scaled gate linearization and bulk-driven quasi-floating gate (BDQFG) BPR structures. Among all BPR structures, BDQFG BPR remarkably shows constant IR value of 1 TΩ over −1 V to 1 V voltage swing for wider process and temperature variations. Research limitations/implications: Various balanced PR design techniques reported in this work will help the research community in implementing larger time constants for analog-mixed signal circuits. Social implications: The PR design techniques presented in the present piece of work is expected to be used in developing tunable and accurate biomedical prosthetics. Originality/value: The BPR structures thoroughly analyzed and reported in this work may be useful in the design of analog circuits specifically for applications such as neural signal recording, cardiac electrical impedance tomography and other low-frequency biomedical applications. [ABSTRACT FROM AUTHOR]

Low‐noise and low‐voltage operation is prime requirement of an operational transconductance amplifier for low frequency applications. However, achieving low‐noise operation at low supply voltages is a challenging task in CMOS technology owing to noise‐power and noise‐stability tradeoffs. This article outlines, the design of four differential bias self‐cascode (DBSC) operational transconductance amplifiers (OTAs) working at ±0.7 V. The four design techniques namely gate driven (GD), bulk driven (BD), bulk driven quasi‐floating gate (BDQFG), and gate driven quasi floating bulk (GDQFB) have been applied on DBSC OTAs. The designing aspects and performance parameters of these four OTAs such as gain, gain‐bandwidth, input referred noise (IRN), settling time (ST), common mode rejection ratio (CMRR), total harmonic distortion, input impedance, transconductance, power consumption, area consumption and process/mismatch variations have been fairly compared in this work. These DBSC OTAs have been designed and simulated using a standard 0.18‐μm 6M1P CMOS N‐well process. The results infer GD DBSC OTA shows high CMRR of 125.83 dB. While the BD DBSC OTA consumes very low power of 0.2 μW. The BDQFG DBSC OTA shows low 1% ST of 24.83 μS. The GDQFB DBSC OTA show high transconductance (2.35 mS), high gain (64.97 dB), and low IRN (0.40 μV/√Hz at 10 Hz). The theoretical predictions for these OTAs agree with the post‐layout simulations. The proposed OTAs can be used for designing various analog circuits such as programmable gain amplifiers, variable gain amplifiers, and transimpedance amplifiers for low‐frequency biomedical and health care applications. [ABSTRACT FROM AUTHOR]

This work mainly focuses on synthesizing and evaluating the efficiency of methylammonium lead halide‐based perovskite (MAPbX3; X=Cl, Br, I) solar cells. We used the colloidal Hot‐injection method (HIM) to synthesize MAPbX3 (X=Cl, Br, I) perovskites using the specific precursors and organic solvents under ambient conditions. We studied the structural, morphological and optical properties of MAPbX3 perovskites using XRD, FESEM, TEM, UV‐Vis, PL and TRPL (time‐resolved photoluminescence) characterization techniques. The particle size and morphology of these perovskites vary with respect to the halide variation. The MAPbI3 perovskite possesses a low band gap and low carrier lifetime but delivers the highest PCE among other halide perovskite samples, making it a promising candidate for solar cell technology. To further enrich the investigations, the conversion efficiency of the MAPbX3 perovskites has been evaluated through extensive device simulations. Here, the optical constants, band gap energy and carrier lifetime of MAPbX3 were used for simulating three different perovskite solar cells, namely I, Cl or Br halide‐based perovskite solar cells. MAPbI3, MAPbBr3 and MAPbCl3 absorber layer‐based devices showed ~13.7 %, 6.9 % and 5.0 % conversion efficiency. The correlation between the experimental and SCAPS simulation data for HIM‐synthesized MAPBX3‐based perovskites has been reported for the first time. [ABSTRACT FROM AUTHOR]

In this work, the effect of gate metal work function engineering (GME), gate bias and drain bias on the bias dependent parasitic capacitances has been studied. Further, RF Figure of merits (FOMs) such as power gains, cut-off frequency ( f ), maximum oscillation frequency ( f ) and intrinsic delay of hetero-dielectric gate-metal-engineered gate-all-around tunnel FET (HD-GME-GAA-TFET) are studied and compared with HD-GAA-TFET. Simulation results show an appreciable improvement in RF FOMs with the application of GME architecture on GAA TFET. Further, it has been observed that GME exhibits 3.76 times enhancement and 0.017 times reduction in cut-off frequency and intrinsic delay respectively as we increase the work function difference, which makes it a promising candidate for low power switching applications. Moreover, the small signal Y-parameters have also been studied which indicates that HD-GME-GAA-TFET is a promising candidate for RF/microwave applications. All the simulations have been done using ATLAS device simulator. [ABSTRACT FROM AUTHOR]

This paper presents a mathematical modeling insight for the novel heterogate dielectric-dual material gate-GAA TFET (HD-DMG-GAA-TFET) and validating the results with TCAD simulation. By using the appropriate boundary conditions and continuity equations, the Poisson's equation is solved to obtain the potential profile. The developed model is used to study the analog performance parameters such as subthreshold swing (SS), threshold voltage (V), transconductance (g), drain conductance (g), device efficiency (g/I), intrinsic gain (g/g), channel resistance (R) and output resistance (R). Further, to optimize the effect of metal work function on analog performance, three different combinations of DMG configurations has been studied. The results demonstrated that for a difference of 0.4 eV, the analog performance of the device is optimized. Low off current and high value of on current resulting into a higher I/I ratio has been obtained, which is appropriate for sub-nanometre devices and low standby power applications. The analytical results obtained from the proposed model shows good agreement with the simulated results obtained with the ATLAS device simulator. [ABSTRACT FROM AUTHOR]

This paper investigates the reliability of PIN-gate-all-around (GAA)-tunnel field-effect transistor (TFET) with N+ source pocket. The reliability of the PNIN-GAA-TFET is examined by analyzing: 1) the impact of interface trap charge (ITC) density and polarity and 2) the temperature affectability on analog/RF performance of the device. It is realized that the interface traps existing at the Si/SiO2 interface modifies the flatband voltage and, thereby, alters the analog and RF characteristics of the device. The analysis is done at various trap charge densities and polarities. The results, thus, obtained reveal that, at higher trap charge density, the device performance alters significantly. It is obtained that, for a donor trap charge density of $3 \times 10^{{12}} cm ^-2 , the off-state current of the device degrades tremendously (increases from an order of 10^-17 – 10^-9\textA ). The temperature affectability over the device reveals that, at lower gate bias, the Shockley–Read–Hall phenomenon dominates and degrades the subthreshold current of the device at elevated temperatures. However, for the superthreshold regime, the band-to-band tunneling (BTBT) mechanism dominates. Furthermore, the results show enormous degradation in the off-state current at elevated temperatures, such that, with an increase in the ambient temperature from 200 K to 400 K, the I \mathrm{\scriptscriptstyle OFF} degrades by an order of 10^5 , i.e., increases from 10^-18 A to 10^-13 A. The results specify that the PNIN-GAA-TFET is insusceptible to the acceptor traps existing at the Si/SiO2 interface in comparison with the donor traps. [ABSTRACT FROM PUBLISHER]

This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is analysed that the source pocket located at the source-channel junction narrows the tunneling barrier width at the tunneling junction and thereby enhances the ON-state current of GAA-TFET. Further, it is obtained that the GDU resists the extension of carrier density (built-up under the gated region) towards the drain side (under the underlapped length), thereby suppressing the ambipolar current and reducing the parasitic capacitances of GAA-TFET. Consequently, the amalgamated merits of both engineering schemes are obtained in GDU-PNIN-GAA-TFET that thus conquers the greatest challenges faced by TFET. Thus, GDU-PNIN-GAA-TFET results in an up-gradation in the overall performance of GAA-TFET. Moreover, it is realised that the RF figure of merits FOMs such as cut-off frequency ( f T ) and maximum oscillation frequency ( f MAX ) are also considerably improved with integration of source pocket on GAA-TFET. Thus, the improved analog and RF performance of GDU-PNIN-GAA-TFET makes it ideal for low power and high-speed applications. [ABSTRACT FROM AUTHOR]

• Magnesium fluoride (MgF 2) textured perovskite solar cell is proposed. • The impact of ten different MgF 2 textured surfaces is examined. • Textured device showed significant improvement as compared to device (22.7%). • The study revealed that the proposed PSC device achieved 24.8% efficiency. • Device delivered enhanced short circuit current density of 26.12 mA/cm2. In this work, we explored the use of magnesium fluoride (MgF 2) based textured surfaces in perovskite solar cells (PSCs) to enhance light trapping and increase conversion efficiency. We studied the impact of different positions of random pyramid arrays (RAs) on reflectance, EQE, JV curve, and PV parameters. Our results showed that this approach led to a conversion efficiency of 24.8% with J SC of 26.12 mA/cm2. [ABSTRACT FROM AUTHOR]

The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO 2 -Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H 2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices. [ABSTRACT FROM AUTHOR]

The goal of this work is to overcome the major impediments of tunnel FET such as the inherent ambipolar current ( I ) and the lower ON current ( I ). To suppress the I , gate drain overlap (GDO) engineering scheme has been incorporated over the cylindrical gate all around TFET (GAA-TFET). However, to enhance the I , heterogate dielectrics (HD) are used in the gate oxide region. Results indicate that an appreciably reduced I and significantly enhanced I has been obtained with the amalgamation of GDO and HD, respectively, onto GAA-TFET. Further, the effect of GDO length ( L ) has also been studied. Quantitative analysis of ambipolarity factor ' α' reveals that at large L , ' α' improves. It is found that GDO degrades the high-frequency (HF) performance such as cutoff frequency ( f ) of the device, because of the enhanced parasitic capacitances. To surpass the deterioration at HF caused by GDO, the dielectric over GDO region has been altered, and it has been analyzed that by inserting a material of low-dielectric constant ( k = 1) and parasitic capacitances of the device reduces, resulting into enhancement in f . Moreover, the low-k dielectric inserted over L reduces the I supplementary, along with enhanced f . Suppressed I and enhanced f of GDO-HD-GAA-TFET with low-k dielectric over L make it adequate for application in HF and digital circuitry. [ABSTRACT FROM AUTHOR]

Among all available photovoltaic (PV) technology options, c-Si based passivated emitter rear cell (PERC) has already proved its mettle by delivering more than 22% conversion efficiency at the industrial level. However, designing of PERC solar cell device remains a challenge owing to recombination and absorption losses, which eventually restrict the performance of the device toward achieving an Auger efficiency limit of 29.4%. The primary contributor to these losses is emitter recombination losses that limits the performance of PERC devices. The n + -emitter region in the proposed PERC devices is formed using ion implantation followed by a diffusion process. The impact of process variables such as dose (cm−2), energy (keV), diffusion time (s), and diffusion temperature (oC) on the PERC device performance is not much explored. Therefore, in an attempt to fulfill this research gap, the emitter region performance in terms of ion implantation of phosphorus, influence of local back surface field (BSF) doping concentration (1017 to 1019 cm−3), and back surface recombination velocity (SRV 101–107 cm/s) on PERC device performance followed by the loss analysis is examined in this work. An upright pyramid textured structure with constant height (5 μm) and industrial standard stacked dielectric anti-reflective coating layers, SiN X /SiO 2 and Al 2 O 3 /SiN X at front and back side respectively is realized using different process statements such as deposit, etch, implantation, and diffusion with the help of a Silvaco TCAD software. Investigations reveal that the PERC device can deliver an efficiency of 22.8% with 150 μm boron-doped crystalline silicon (c-Si) wafer at an optimum phosphorous dose (5 × 1015 cm−2), BSF doping (1019 cm−3), and SRV n (107 cm/s). Short-circuit current density (J SC) of 40.8 mA/cm2, open-circuit voltage (V OC) of 0.686 V, and fill factor (FF) of 81.54% are obtained for the structure under consideration. A roadmap to achieve 23.5% conversion efficiency has also been reported by assuming a carrier selective contact at the backside with a surface recombination velocity of 10 cm/s. • 22.8% and 23.5% efficient ion-implanted PERC solar cells are designed. • Industry-standard process and device simulations are carried out to design the PERC solar cells under consideration. • The implantation dose has been optimized to improve the performance of the emitter region. • The impact of back surface doping and rear contact surface recombination velocity has been studied and optimized. • Detailed loss analysis is also presented relative to the Auger limit (29.4%) to provide a path for further improvement. [ABSTRACT FROM AUTHOR]

To meet the increasing demand for power sources, scientists are continuously trying to improve the efficiency of solar cells. In these circumstances, Cs-based perovskites have attracted attention due to their intriguing performance. In this paper, eight different solar cells based on Cs-halide perovskite absorbers (CsPbI3, CsPbBr3, CsSnI3, CsSnCl3, Cs2BiAgI6, Cs3Bi2I9, CsSn0.5Ge0.5I3, and Cs3Sb2I9) are investigated using the SCAPS-1D simulation program. Besides, ZnO and CFTS materials are proposed as promising candidates for charge transport material application, along with gold as the back contact. Initially, the impact of the absorber and the electron transport layer (ETL) thickness on the photovoltaic performance was evaluated. In addition, various parameters, such as the thickness, the donor and acceptor densities and the defect density, are investigated to locate the final optimized Cs-based structures. From this optimization, it is evident that among all the optimizing features, absorber materials and the hole transport layer (HTL) thickness, the HTL acceptor density enhanced the performance much more than the other optimizing features. Furthermore, to evaluate the characteristics of these devices, the series resistance, shunt resistance, working temperature, current–voltage density, and quantum efficiency are also simulated. Among all eight Cs-based perovskites, the ITO/ZnO/CsPbBr3/CFTS/Au and ITO/ZnO/Cs3Bi2I9/CFTS/Au devices achieved the best performance, with a conversion efficiency of 19.28% and 19.23%, respectively. Lastly, the performance of the SCAPS-1D simulator software is verified using the wxAMPS simulation program, where both yield results that are in excellent agreement. In conclusion, this research provides useful information for optimizing solar cell architectures and understanding the effects of various device components. [ABSTRACT FROM AUTHOR]

• A comprehensive study of lead-free PSCs are accomplished using SCAPS-1D simulating software. • The novel approach of grading of the active layer is also studied. • The CTM combination of Titanium oxide (TiO 2) and 2,2′,7,7′-Tetrakis[ N , N - di (4- methoxyphenyl) amino ]-9,9′-spirobifluorene. (SpiroOMeTAD) attains the best possible device outputs. • The lesser defective MASnI3 layer at optimal thickness offers excellent efficiency of 22.3%. • The present work can be valuable for futuristic device optimization of PSC. Methylammonium tin iodide (MASnI 3) is the most commonly used lead-free perovskite absorber material to resolve the issues related to toxic lead (Pb)-based MAPbI 3 perovskite. However, conversion efficiency for MASnI 3 -based perovskite solar cells (PSCs) are still struggling to compete with lead-based PSCs. Therefore, this study provides a roadmap to achieving 22.3 % conversion efficiency for MASnI 3 -based PSCs through extensive device modeling. The work utilizes the graded active layer approach to attain higher excitons inside the active layer. The opto-electrical model's combined effort is considered an excellent light trapping mechanism by matching precise bandgaps 1.3 eV/1.3 eV for a higher generation of excitons. Detailed investigation and optimization of single, double, and triple graded perovskite absorber layer (PAL) have been done in terms of absorber layer thickness, temperature, back contact materials, and bulk defect density to achieve a conversion efficiency of 22.3 %. Results revealed that double-graded perovskite outperforms compared to single and triple-graded material and delivered excellent photovoltaic (PV) parameters such as short circuit current density (J SC) of 33.51 mAcm−2, open-circuit voltage (V OC) of 875 mV and fill factor (FF) of 75.93 %. This paper provides a smooth pathway for futuristic development and further optimization of the device lead-free MASnI 3 -based PSCs. [ABSTRACT FROM AUTHOR]

This present work emphasizes the numerical modeling of lead-free methylammonium tin tri-iodide (MASnI3)-based perovskite solar cells (PSCs) under optimizing preconditions. The prior selection of the perovskite material of MASnI3 is feasible for a more extended absorption spectrum due to a smaller bandgap of 1.3 eV than higher bandgap methylammonium lead tri-iodide (MAPbI3)-based PSC and the factor of lesser toxicity. Furthermore, to enhance the efficiency of the device, selecting potentially steadier and superior carrier transport materials (CTMs) is among the most effective approaches for optimizing device outputs. Among the proposed materials, a prior selection of copper antimony sulfide (CuSbS2) and zinc oxide (ZnO) as CTMs with an optimized thickness of MASnI3 material has offered a higher power conversion efficiency (PCE) of 22.16% under the photoillumination AM1.5. Furthermore, the less-defective PSC device can also be helpful for further device optimization and futuristic development. [ABSTRACT FROM AUTHOR]

In the advanced technology nodes, conventional MOSFETs are being replaced by tunnel field effect transistors (TFETs), due to its potential of achieving subthreshold swing (SS) less than 60 mV/decade. However, certain constraints are to be met to improve the performance of TFET in terms of higher ON current (I ON) and lower threshold voltage (V th). Here, in this paper, magnesium silicide/silicon (Mg 2 Si/Si) heterojunction double gate TFET (Mg 2 Si/Si HDG-TFET) is explored and is simultaneously compared with conventional silicon double gate TFET (Si DG-TFET). Results depict superior performance of Mg 2 Si/Si HDG-TFET as compared to conventional Si DG-TFET, in terms of dc characteristics, i.e., I ON , V th , SS, and I ON /I OFF ratio. Obtained V th (0.26 V), SS (10.05mV/decade) and I ON /I OFF ratio (1013) for the case of Mg 2 Si HDG-TFET shows an improvement of 77%, 49% and 10 decades respectively compared to counterpart i.e., Si DG-TFET. In particular, this improvement in the performance of Mg 2 Si/Si HDG-TFET over Si DG-TFET is attributed to staggered type-II heterojunction interface at the source-channel junction, which leads to reduction of the width for interband tunneling barrier and hence, improves I ON. This viability of the device is also determined by analyzing the impact of non-idealities present in the device. In this respect, the Gaussian and tail defects are considered in the bulk of Mg 2 Si. The results reveal that the Gaussian defects alter the device characteristics mainly in the subthreshold regime, whereas, in the ON state, the impact of defects is minimal. Further, it is obtained that the device is much immune for tail defects in comparison with the Gaussian defects. The CV analysis reveals a marginal degradation in parasitic capacitances for Mg 2 Si/Si HDG-TFET as compared to Si DG-TFET. However, this degradation can be overlooked against the remarkably enhanced drain current. Thus, the device overcomes the bottleneck of TFET and provides high I ON and low V th without degrading the other performance parameters and hence is suitable for low power analog and digital applications. • Mg 2 Si/Si heterojunction DG-TFET has been proposed. • Impact of presence of non-idealities such as Gaussian and tail defects is analyzed. • Staggered type-II heterojunction interface of Mg 2 Si/Si conquer bottleneck of TFET. • Proposed device is suitable for low power analog and digital applications. [ABSTRACT FROM AUTHOR]

Perovskite solar cells (PSCs) are one of the fastest emerging photovoltaic (PV) technology at the research level. To achieve higher conversion efficiencies from PSCs, a perovskite absorber layer is stacked between two charge transport layers (CTLs) such as electron and hole transport layers. However, fabrication of defect-free multi-layered PSC is a challenging task, and the presence of CTL and their corresponding interfaces with perovskite enhances the recombination, hysteresis and led to poor stability. Here, in this work, CTL free (i.e., electron and hole transport layer free) PSC is simulated using metal work function shifted contacts. The device presented in this work is free from transport layers and the collection process is with the help of an electric field across the perovskite layer. The electric field is created by using two metals of different work function, i.e., 4.35 eV and 5.25 eV (can be realized using self-assembled monolayers technique) used as cathode and anode respectively. Simulated CTL free PSC exhibits J SC = 17.8 mA cm−2, V OC = 712 mV, FF = 68.5% and PCE = 8.7% with 250 nm thick perovskite absorber layer having bulk defect density of 2.5 × 1013 cm−3. Further, a comprehensive study is done in terms of front electrode work function (FEW), front electrode transparency, perovskite thickness and bulk defect density to understand the impact of these parameters on the performance of the device. To understand the behavior of the device, the energy band diagram profile is examined. Reported results show that higher metal work function difference between front and back electrode, higher transparency, and thick perovskite layer with low defect density results in better PV effect in CTL free PSC. Optimized CTL free PSC device delivers J SC = 19.9 mA cm−2, V OC = 726 mV, FF = 66.8% and PCE = 9.7%. The design simulated in this work opens up a new window for next-generation interface defect and hysteresis-free PSC. [ABSTRACT FROM AUTHOR]

• Investigates a solar cell with SnO2 (ETL), fullerene (C60), KGeCl3, and Me4PACz layers. • SCAPS 1d generated 1000 datasets: VOC: 1.13V, JSC: 23.47 mA/cm², FF: 73.34%, PCE: 19.62%. • Uses ML algorithms, especially XGBoost (XGB), to predict PCE with high accuracy. • XGB shows highest R² (99.60%) and lowest MSE (0.150) in predictions. The existing designs of perovskite based solar cells frequently encounter issues with poor photovoltaic (PV) performance and stability issues. In this study, to address above issues, we investigate a novel solar cell device featuring layers of tin dioxide (SnO 2), fullerene (C 60), potassium germanide chloride (KGeCl 3), and Me4PACz. SnO 2 , serving as the electron transport layer (ETL), offers high electron mobility and compatibility with solution processing techniques. Further, different machine learning (ML) algorithms have been utilized for the prediction of accurate PCE prediction in order to simplify computations and improve accuracy. The complex interactions between these parameters and their combined impact on device stability and efficiency are shown through systematic experimentation with SCAPS 1d and 1000 datasets have been generated. Impressive PV parameters are obtained by optimization: V OC : 1.13 V, J SC : 23.47 mA/cm2, FF: 73.34 %, and PCE: 19.62 %. Ensemble machine learning techniques, such as XGBoost (XGB), perform better than individual models, exhibiting increased accuracy and resilience across a range of machine learning performance metrics. When compared to individual SVR, RF and stacked SVR & RF the MSE value produced by the XGB (0.150) algorithm is significantly lower. However, out of all the ML algorithms in this study, the R2 value found in XGB (99.60 %) is the best. The boosting strategy used by XGB is notable for how well it handles complicated datasets and enhances PCE prediction in solar cells. After finding the best suited models (RF & XGB), mean and standard deviation have also been calculated for the different ML performance matrices like MSE, R2 and CVS for 10 iterations. The development of innovative perovskite base PSCs without the need for tedious and lengthy simulations may be facilitated by this approach. [ABSTRACT FROM AUTHOR]

• Comparison of Mg 2 Si/Si DL-DGTFET with conventional-DL-DGTFET, showing 77.5 % and 81.3 % improvement in V th and SS Mg 2 Si DL-DGTFET. • Biosensing device, with dual cavities, exhibits notable sensitivity for DNA and neutral biomolecules. • Biosensor, with Gelatin-filled nanocavity (k = 12), shows ∼ 103 sensitivity, varying with DNA charge density. • Study deems SS and I ON /I OFF vital, highlighting Mg 2 Si/Si DL-DGTFET's biosensing competence. • Mg 2 Si-biosensor promises low-power bioequipment, holds potential for specific bio-species detection with nanotech advances. In this work, we contrasted the potential of Mg 2 Si/Si heterojunction-based dopingless (DL) double gate tunnel field effect transistor (DGTFET) with conventional (C)-DL-DGTFET. The simulation results exhibit excellent capabilities of Mg 2 Si source DL-DGTFET in terms of electrical properties, that are I ON , I ON /I OFF , electron tunnelling rate, V th and SS in comparison to C-DL-TFET. A remarkable improvement of 77.5 % and 81.3 % is observed while computing V th and SS, in the case of Mg 2 Si source DL-DGTFET. For that reason, to avail most advantage of Mg 2 Si/Si heterojunction, the proposed device with similar specifications and dimensions is critically analysed for biosensing applications. Dual cavities (20 nm x 5 nm) are carved underneath gate electrodes near source channel junction to grab the biomolecules. The proposed biosensor (Mg 2 Si source DL-DGTFET) exhibits significant sensitivity results for both charged (deoxyribonucleic acid (DNA)) and uncharged (neutral) biomolecules. Also, we have reported an impact on biosensor sensitivity with variation in the height of nanocavity (t bio). The effect of steric hindrance on sensitivity is analysed by considering four step profiles - increasing, decreasing, convex and concave. The result reveals the competency of Mg 2 Si/Si heterojunction DL-DGTFET in terms of overall device sensitivity. [ABSTRACT FROM AUTHOR]

Tunnel Field Effect Transistors (TFET) based on quantum mechanical band to band tunneling (BTBT) are promising alternatives for low power analog applications. Additionally, the concept of junctionless (JL) devices realized by the charge plasma concept offers added advantages in terms of simplified fabrication techniques. In n type JL-TFET, p+ source is induced using a polarity gate (PG) with suitable work function. However, retention of induced p+ source is not a sole contribution of PG, the source electrode (SE) metal silicide work function also plays a significant role in the retention of hole plasma (specially near the interface of SE/induced source). Thorough study regarding the combined influence of PG and SE metal silicide work function on induced p+ source is missing in the literatures. This work explores the performance of JL-TFET of different SE metal silicide such as TiSi2 (4.53 eV), CrSi2 (4.85 eV) and Pd2Si (5.3 eV). It is perceived that for SE metal silicide with work function lower than p+ induced source i.e., TiSi2 and CrSi2 the depletion of hole plasma (formation of Schottky interface) appears near the SE/p+ induced source interface. The depletion of hole plasma is attributed to the combined electric field of SE metal silicide and the PG, the immediate consequence is the refrainment of current. Further, due to the formation of Schottky interface for TiSi2 and CrSi2, the performance of the device is examined by revoking and evoking the Universal Schottky Tunneling (UST) model. Results reveal the undervalued performance of the device without the inclusion of UST, primarily a lower drain current (and thereby the analog performance) of the device is obtained, since it ignores the Schottky tunneling at SE/p+ induced source interface. However, the inclusion of UST model emulates the performance of JL-TFET precisely, by incorporating the Schottky tunneling at the SE/p+ induced source interface. Thus, for the retention of hole plasma, appropriate SE work function i.e., ΦSE > Φp+ induced source is required, whereas for SE work function ΦSE < Φp+ induced source appropriate Schottky tunneling must be considered for accurate analysis of the device. The study also reveals that the depletion of hole plasma and hence the formation of Schottky interface can be avoided using SE with metal work function source for which consideration of UST is immaterial. [ABSTRACT FROM AUTHOR]

This work seeks to present a comparative analysis of linear and analog/RF performances of a silicon (Si)-source double gate tunnel field effect transistors (DG-TFET), germanium (Ge)-source DG-TFET and Gate Material Engineered germanium (GME-Ge)-source DG-TFET. The objective of this analysis is to probe the viability of the Ge-source-DG-TFET and GME-Ge-source-DG-TFET as possible components of RF/microwave systems vis-à-vis conventional Si-source-DG-TFETs. The Ge-source-DG-TFET has been shown to have superior performance parameters as compared to the Si-source-DG-TFET. It is realized that the GME-Ge-source-DG-TFET preserves the superior performance of the Ge-source-DG-TFET and displays improved device reliability in contrast to the latter. With these ideas in the backdrop, a study of parasitic capacitances, transconductance (gm1) and its higher order coefficients (gm2 and gm3), and signal performance metrics such as VIP2, VIP3, third-order Input Intercept Point (IIP3) and third-order Intermodulation Distortion (IMD3) sheds light on the linear performances of the three devices. Further, the analog/RF performances of the three devices are investigated through analog/RF Figures of Merit (FOM) including current gain, unilateral power gain and maximum available power gain (Gma). This analysis reveals that the GME-Ge-source-DG-TFET is suitable for high-frequency, low-power operation required in modern communication systems. [ABSTRACT FROM AUTHOR]

Tandem solar cells (TSC) is the most promising photovoltaic technology, as it efficiently overcomes the thermalization and nonabsorption losses. In this context, thin‐film/colloidal quantum dot (CQD)‐based 2‐terminal monolithic TSCs are designed using a‐Si:H of wide bandgap (1.7 eV) as the top cell and PbS CQD of narrow bandgap (1.2 eV) as the bottom cell. Initially, top and bottom subcells are designed and calibrated to have state‐of‐the‐art power conversion efficiencies (PCE) of 6.86% and 9.38%, respectively. Afterward, the thicknesses of the inverted bottom cell are optimized as 200 nm so as to obtain 8.34% efficiency. The standalone condition reflects current density (JSC)/open‐circuit voltage (VOC) of 9.97 mA cm−2 and 0.91 V in the top cell and 21.28 mA cm−2/0.63 V in the bottom cell. Further, both subcells are evaluated for tandem configuration with ITO‐based interlayer to provide the current matching conditions. In the proposed tandem design, the thickness of the absorber layers is optimized to achieve the highest JSC, which is indeed limited by the top cell, due to a lower JSC value of 10.61 mA cm−2 in standalone conditions. Optimized tandem design with 200 nm/150 nm‐thick absorber layer‐based top/bottom subcell results in JSC of 10.52 mA cm−2, VOC of 1.59 V, FF of 71.65%, and PCE of 12.02%. [ABSTRACT FROM AUTHOR]

In the exponential growth of perovskite solar cells (PSCs), there remains certain concerns regarding the wide-range incident photons absorption. The doubly graded lead-free absorber in the PSC has been recommended for solving these problems. The absorber material in the PSC is based on the lead-free as well as tin-based perovskite i.e., CH 3 NH 3 SnI 3 , that is one of the precarious parameters due to the non-toxic behavior as well as the lower band gap of 1.3 eV that can be useful in broad visible absorption spectrum than the traditional CH 3 NH 3 PbI 3 layer. Furthermore, the quantum efficiency (QE) as well as the power conversion efficiency (PCE) in the double-graded configuration of the PSC can be improve. The outcomes of the present numerical simulations examine the solar cells' single and double grading strategy. Further, we use a novel approach of HTL-free PSC, that can lower the manufacturing cost and the defectivity. The present work compares single and double-grading Perovskite Absorber Layer (PAL) for obtaining high PCE. The results are exciting as the highest open-circuit voltage (V OC) of 0.965V, higher short-current density (J SC) of 35.26 mA/cm2, and high fill factor (FF) of 86.40% in the doubly-graded PSC shows a much-optimized PCE of nearly 29.35% that can be convenient for fabricating much efficient PSC device. • The double graded absorber were simulated for higher performance parameters. • The HTL free along with optimized graded approach enhanced the efficiency. • An optimum power conversion efficiency of 29.35% was achieved using the novel technique. • The current study will pave the way for the development of highly efficient solar cells in the future. • The present work can be valuable for futuristic device optimization of tin-based solar cells. [ABSTRACT FROM AUTHOR]

The extensive outcomes of the specific modeling method for hybrid photovoltaic solar cells at the illumination condition of AM 1.5G spectrum are shown in this simulation work. This research aims to optimize the efficiency of the device structures by introducing the novel hybrid-absorber layer (AL). The hybrid solar cell (HSC) has higher efficiency with an absorber layer (AL), i.e., Copper Zinc Tin Sulphide. The current simulation uses ZnO, V 2 O 5 , and Spiro-OMeTAD as the carrier transport layers (CTLs); both hole/electron transport layer (HTL/ETL) to sandwich the CZTS, which have precise bandgaps of 1.5 eV. Using double HTLs of Spiro-OMeTAD/V 2 O 5 offers a high efficiency of 23.21%. The detailed examination of thickness, total defect density (DD), temperature dependency, and impedance-capacitance analysis of the simulated device structures are also studied simultaneously. • A comprehensive study of CZTS-based solar cells (SCs) is accomplished using SCAPS-1D software. • For the first time, CZTS-based SCs with double HTLs are comprehensively investigated. • Exclusive optimization confirms a high efficiency of the CZTS-based solar cell beyond 23%. • Results reported in this study will pave the way for the development of highly efficient solar cells. • Present work can be valuable for futuristic device optimization of solar cells. [ABSTRACT FROM AUTHOR]

The trapping of photons and broad-spectrum absorption of solar irradiance are the primary focus of numerous solar cell research applications. In the current work, a novel paradigm for trapping light is introduced by introducing a nano-pyramidal array (NPA) using the SETFOS simulator. The triple layer used in the optimized design of the PSC helps improve photon absorption inside the device. The current study shows the optimization of carrier transport layer (CTL) thickness, temperature, cathode materials, and defectivity of the PSC devices. The simulation confirms that the NPA on the top of the ITO combined with a triple-graded active layer (AL) exhibits a current density (JSC) of 21.43 mA cm−2, an open-circuit voltage (VOC) of 0.835V, a fill factor (FF) of 82.37, and a power conversion efficiency (PCE) of 14.73%, respectively. The study also includes a lower-cost and novel TaTm as the hole transport layer (HTL) and C60 as the electron transport layer (ETL) for suitable band alignment with the photon absorber. Hence, combining the triple grading with NPA and TaTm as HTL efficiently improves the device performance and shows an effective way to optimize the PSC devices. [ABSTRACT FROM AUTHOR]

In the rapid growth of perovskite solar cells, there are still specific issues regarding the extensive absorption of incident photons. Double-layered methyl ammonium (MA)-free perovskite solar cells (PSC) have been proposed to sort out these issues. The material absorber in solar cells based on MA-free and cesium-based perovskite, i.e., Cs2BiAgI6, is a critical parameter because of its non-volatile nature as well as its band gap of 1.6 eV being helpful in a broader visible absorption spectrum than the conventional CH3NH3PbI3 material. Moreover, the quantum efficiency (QE) and power conversion efficiency (PCE) in a configuration with MXene + TiO2 as the electron transport layer (ETL) in the PSC can make improvements over a more extensive range. The results of the current modeling of numerical simulations are used to investigate the exclusive optoelectrical outputs of the PSC. Furthermore, we use a novel approach of an ETL of MXene + TiO2 in a PSC, which will lower the manufacturing cost and defectiveness. The present work compares different ETLs to attain the best PCE using Cs2BiAgI6 as a perovskite absorber layer (PAL). The results are exciting as the highest open circuit voltage (VOC) of 1.48 V, high short current density (JSC) of 22.8 mA cm-2, with a high fill factor (FF) of nearly 84.6% in the double-layered PSC offer a high power conversion efficiency (PCE) of more than 28%. The designed outputs will be efficient for the convenient fabrication of the PSC. [ABSTRACT FROM AUTHOR]

The wide photon absorption range of tandem solar cells (TSCs) allows them to deliver higher efficiencies than single-junction solar cells. The top cell with a wide bandgap absorbs the higher energy photons, while the bottom cell with a relatively low bandgap absorbs the filtered lower energy photons. However, for cheap, efficient, and long-lasting solar cells, the design must incorporate the top and bottom cell absorber layers with an appropriate band gap. In this context, this article proposes all-perovskite tandem solar cells with suitable perovskite partners as active materials in both the upper (band gap 1.68 eV) and the lower (band gap 1.16 eV) sub-cell. This research has retrieved the calibrated top cell from a previous publication, and the bottom cell has been designed, calibrated, and optimised. The filtered spectrum of the upper cell is evaluated at different perovskite thicknesses and fed to the lower cell to set up a tandem configuration. Subsequently, the current- matching technique has been used to study the tandem short-circuit current density (J SC) at different thicknesses of both sub-cells, followed by current density-voltage (J-V) curve. A total of ten tandem J-V curves are constructed and corresponding PV parameters are obtained to obtain the optimized efficiency of 33.8% with an open circuit voltage (V OC) of 2.15 V, a fill factor (FF) of 78.87% and a J SC of 20 mA.cm−2. The reported results will open the door for future development of highly efficient and low-cost monolithic two-terminal tandem devices. [ABSTRACT FROM AUTHOR]

In this study, we investigated the potential of CsPbI3 as an absorber material to be used in perovskite solar cells (PSCs). To optimize the device, we used TiO2 as the electron transport layer and copper barium thiostannate (CBTS) as the hole transport layer in the CsPbI3-based PSC, and employed SCAPS- 1D software. We initially tested 10 different back metal contacts (BMCs) to identify the most suitable one for the primary device. After optimization of the BMC, the best-optimized device structure, ITO/TiO2/CsPbI3/CBTS/Ni, achieved a power conversion efficiency of 17.91%. We then evaluated the impact of the absorber thickness, acceptor density, and defect density on the device performance. We also analyzed the effect of changing the thickness, charge-carrier density, and defect density of the CsPbI3, TiO2, and CBTS layers, as well as the interfacial defect densities at the CBTS/CsPbI3 and CsPbI3/TiO2 interfaces, to further optimize device performance. This resulted in an improved efficiency of 19.06% for the ITO/TiO2/CsPbI3/CBTS/Ni device with HTL, compared to 18.17% without HTL. We also analyzed the impacts of operating temperature, series resistance, and shunt resistance on the final optimized device performance, as well as its capacitance-voltage, generation and recombination rate, current density- voltage (J-V), and quantum efficiency (QE) features. The results of these simulations provide valuable insights for the experimental fabrication of an efficient CsPbI3-based inorganic PSC. [ABSTRACT FROM AUTHOR]

Achieving high-gain and low-noise operation of bulk-driven (BD) operational transconductance amplifier (OTA) with low-power consumption is a challenging task owing to inherent low transconductance and high noise in BD MOSFET. In this paper, we report a self-cascode partial positive feedback (SCPPF) approach-based BD OTA and have fairly compared the results with regular single MOS partial positive feedback (PPF) approach-based BD OTA. In comparison to regular BD PPF OTA, the proposed BD SCPPF OTA yields an improved gain of 68.71 dB, gain-bandwidth of 39.4 kHz, power consumption of 630 nW, output impedance of 0.4 MΩ and common mode rejection ratio of 134.4 dB for same input referred noise of 1.11 μV/√ Hz at frequency of 10 Hz and supply voltage of ±0.5 V. The area consumed by BD SCPPF OTA is 0.0523 mm2. The proposed BD SCPPF OTA can be possibly used to improve the performance of biomedical analog front-end sensing and signal processing systems. [ABSTRACT FROM AUTHOR]

• The study models BaZrS 3 solar cells, alloying Ti at the Zr site for bandgap engineering at concentrations up to 3%. • Various back surface fields (BSFs) (CdTe, CIGS, CZTSe, Cu 2 Te, FeSi 2 , GeSe, PbS, µc-Si, SnTe, SnS, Sn 2 S 3 , and WSe 2) are investigated to enhance photo-absorption. • Comparative study of BaZrS 3 -based solar cells with BSFs with already existing structures of BaZrS 3 solar cells without BSFs. • The findings indicate that a Ti alloying concentration of 3% at the Zr site, coupled with a Cu 2 Te BSF, achieves the highest efficiency, approximately 30%. Chalcogenide perovskites are emerging as superior alternatives to hybrid halide perovskites for photovoltaic applications due to their non-carcinogenic composition and enhanced environmental resilience, including superior resistance to moisture. This study focuses on the computational modeling of BaZrS 3 (Barium Zirconium Sulfide) based solar cells, featuring a native bandgap of ∼1.71 eV. Through precise bandgap engineering via Ti alloying at the Zr site, the study aims to optimize the bandgap to the ideal range for photovoltaic efficiency. The device architecture is further refined by adjusting parameters such as layer thickness, doping densities, trap densities and metal contacts. The optimum device efficiencies at this stage were found to be 22.45 % for BaZrS 3 ; 23.91 % for Ba(Zr 0.99 Ti 0.01)S 3 ; 26.64 % for Ba(Zr 0.98 Ti 0.02)S 3 ; and 27.74 % for Ba(Zr 0.97 Ti 0.03)S 3. Additionally, the incorporation of various back surface fields (BSFs) (CdTe, CIGS, CZTSe, Cu 2 Te, FeSi 2 , GeSe, PbS, µc-Si, SnTe, SnS, Sn 2 S 3 , and WSe 2) is investigated to enhance photo-absorption. The findings indicate that a Ti alloying concentration of 3 % at the Zr site, coupled with a Cu 2 Te BSF, achieves the highest efficiency, approximately 30 %. These optimized structures present a robust framework for developing efficient, stable, and non-toxic photovoltaic devices utilizing chalcogenide perovskites. [ABSTRACT FROM AUTHOR]

In this study, the perovskite tandem solar cell (TP SC) has been accomplished using SCAPS-1D. The present study focuses on comprehensive exploration and detailed optimization using various strategies constructing a tandem device. To calculate high photovoltaic power conversion efficiency (PCE), the numerical analysis has been carried out for a wide-bandgap halide (W BH) FA 0.75 Cs 0 · 25 Pb(I 0 · 8 Br 0.2) 3 of bandgap 1.67eV and a Pb–Sn based narrow-bandgap halide (N BH) FA 0.7 MA 0.3 Pb 0 · 5 Sn 0 · 5 I 3 of bandgap 1.22eV as absorber layer in top-cell (T CELL) and bottom-cell (B CELL) respectively. The W BH has huge potential as a front light absorber and the N BH based B CELL provides stability and high performance by accepting high and low energy photons respectively. This method mitigates thermalization and non-absorbed photon loss which results in the growth in PCE. The proposed work demonstrates the impact of active-layer thickness along with defect density on the solar-cell parameters. It has been observed that defect density is low for the optimal performance. An investigation for various electron transport medium (ETMs) and hole transport medium (HTMs) has been done to secure an optimum performing T CELL as well as B CELL. Using filtered-spectrum study along with current-matching method, every PV metric parameter has been analyzed after their deployment into tandem configuration. The numerical investigation has shown promising photovoltaic parameters with aa high open circuit voltage (V OC) of 2.33 V, a short circuit current density (J SC) of 17.07 mA/cm2, a fill factor (FF) of 79.34 % and PCE of 31.55 % in tandem configuration. • Perovskite tandem solar cell (TP SC) has been accomplished using SCAPS-1D. • Wide-bandgap halide (W BH) FA 0.75 Cs 0 · 25 Pb(I 0 · 8 Br 0.2) 3 of bandgap 1.67eV and a Pb–Sn based narrow-bandgap halide (N BH) FA 0.7 MA 0.3 Pb 0 · 5 Sn 0 · 5 I 3 of bandgap 1.22eV as absorber layer in T CELL and B CELL respectively have been studied. • Open circuit voltage (V OC) of 2.33 V, a short circuit current density (J SC) of 17.07 mA/cm2, a fill factor (FF) of 79.34 % and PCE of 31.55 % in tandem configuration. • Using filtered-spectrum study along with current-matching method, every PV metric parameter has been analyzed after their deployment into tandem configuration. • The proposed work demonstrates the impact of active-layer thickness along with defect density on the solar-cell parameters. [ABSTRACT FROM AUTHOR]

[Display omitted] • Optimized Cs 0.05 FA 0.95 PbI 2.55 Br 0.45 layer for solar windows and BIPV. • Achieved 20 % PCE, 1.24 V V OC , and 80.70 % fill factor. • Increased J SC from 9.98 to 21.60 mA/cm2 with thinner absorber layers. • Balanced transparency and efficiency for building-integrated photovoltaics. Perovskite materials are gaining attention due to their superior photovoltaic performance and potential for transparent solar cell applications, such as solar windows and building-integrated systems. This study focuses on designing thinner Cs 0.05 FA 0.95 PbI 2.55 Br 0.45 perovskite layers to balance transparency and power conversion efficiency (PCE). The solar cell performance improves with increased absorber layer thickness, resulting in a current density (J SC) rise from 9.98 to 21.60 mA/cm2. The optimized device achieves an open-circuit voltage (V OC) of 1.24 V, a fill factor (FF) of 80.70 %, and PCE of 20 %. For absorber thicknesses of 100–500 nm, the PCE ranges from 10.01 % to 19.45 %, while the average visible transmittance (AVT) decreases from 51.05 % to 2.63 %. These results provide insights into designing semi-transparent perovskite solar cells with a balance between efficiency and transparency. [ABSTRACT FROM AUTHOR]