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Gradient epsilon-near-zero (ENZ) metamaterials offer broadband directional control over thermal emission. Implementing this approach using materials that remain stable in harsh thermo-chemical environments would allow it to be broadly deployed in thermal photonics. Our prior work showed that heterostructures of rock salt MgO and perovskite BaZr0.5Hf0.5O3 (BZHO) are stable up to 1100 °C in air, with no discernible intermixing. In this work, we design a gradient ENZ metamaterial made from three lattice-matched refractory oxides: MgO, BZHO, and NiO. The miscibility of MgO and NiO makes it possible to linearly vary the ENZ frequency of the metamaterial layers. BZHO is used as a thin, interlayer diffusion barrier. We model the emissivity of our gradient ENZ metamaterial at 25 and 1000 °C to demonstrate that the spectral bandwidth of directional emission is preserved at high temperatures despite changes in the optical properties of each material. Finally, we discuss practical fabrication challenges associated with the back reflector and offer potential solutions based on advancements in hetero-integration. Overall, this work shows a pathway toward gradient ENZ metamaterials with ultrahigh-temperature stability. [ABSTRACT FROM AUTHOR]

Functional thin film superlattices with stability in extreme environments can lead to transformative performance in optical and thermal applications such as thermophotovoltaics. In this work, key issues associated with defects that prevent layer-by-layer growth in epitaxial, low-miscibility oxide superlattices are investigated. Layer protrusions, approximately 8 nm wide and 3 nm thick, arise from a strain relaxation mechanism in 8 nm bilayer superlattices of Ba(Zr0.5Hf0.5)O3/MgO and propagate through the subsequent superlattice layers forming an inverted pyramid structure that is spatially phase offset from the matrix. The density and size of these defects scales with the number of interfaces in the sample, indicating that surface roughness during growth is a significant factor in the formation of these defects. In situ high temperature transmission electron microscopy (1000 °C, in vacuo) measurement reveals that phase decomposition of Ba(Zr0.5Hf0.5)O3 and decoherence of the superlattice is nucleated by these defects. This work highlights that achieving optimum growth conditions is imperative to the synthesis of single-crystalline superlattices with sharp interfaces for optimized performance in extreme environments. [ABSTRACT FROM AUTHOR]

Recent work has demonstrated record-high thermophotovoltaic efficiency using thin-film InGaAs cells, but the power density of devices remains low. Elevated power densities are relevant to many thermophotovoltaic (TPV) applications, ranging from mobile generators to stationary energy storage of renewable electricity, and require effective management of heat and charge carriers. Here we investigate the use of single-junction InGaAs airbridge cells (ABCs) under such conditions. Experimental characterization of an InGaAs ABC with varying emitter and cell temperature is used to develop a predictive device model where carrier lifetimes and series resistances are the sole fitting parameters. The utility of this model is demonstrated through its use in identifying near-term opportunities for improving performance at elevated power densities, and for designing a thermal management strategy that maximizes overall power output. After accounting for the power necessary to cool the cells, this model shows that an InGaAs ABC with high material quality can reach a peak efficiency of ∼41% at 0.5 W/cm2, corresponding to an emitter temperature of 1070 °C, and sustain efficiencies above 36% up to 1.5 W/cm2. • Current airbridge TPV cells are limited by recombination, series resistance, and cell heating. • Improved material quality largely addresses recombination and series resistance losses. • An air-cooled design is proposed for thermal management. • A 41%-efficient TPV cell at 0.5 W/cm2 is predicted based on above improvements. [ABSTRACT FROM AUTHOR]