1. Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN.
- Author
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Lucja Marona, Julita Smalc-Koziorowska, Ewa Grzanka, Marcin Sarzynski, Tadek Suski, Dario Schiavon, Robert Czernecki, Piotr Perlin, Robert Kucharski, and Jaroslaw Domagala
- Subjects
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LIGHT emitting diodes , *SEMICONDUCTOR lasers , *CATHODOLUMINESCENCE , *X-ray diffraction , *TRANSMISSION electron microscopy - Abstract
In this work, we fabricated green-light-emitting laser structures on a (20-21) semipolar GaN substrate. Using cathodoluminescence mapping, x-ray diffraction, and transmission electron microscopy, we revealed the formation of relaxation defects within InGaN waveguides and AlGaN claddings. The observed defects in the AlGaN layers are stripe-like and extend along the a axis, but in the InGaN layers they form a characteristic checkered pattern. We demonstrate that using the selective area growth method we can effectively suppress the formation of both types of defects, thus enabling the fabrication of defect-free green laser structures on semipolar GaN substrates. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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