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The first pseudomorphic HEMT (PHEMT) with a doping profile of Sn nanowires (Sn-NWs) on a vicinal GaAs substrate has been demonstrated. Anisotropy of saturation current at 300 K was obtained when current flows along and across Sn-NWs. In the case of PHEMT orientation for a current flow along Sn-NWs, a higher power gain cut-off frequency was observed in comparison with PHEMT orientation for a current flow perpendicular to Sn-NWs (). We relate the obtained anisotropy of the static and dynamic characteristics of PHEMT to the formation of quasi-one-dimensional conductivity channels in a quantum well. [ABSTRACT FROM AUTHOR]

We report on the design, evaluation and fabrication of the sub-terahertz (sub-THz) detector using a GaAs gated field-effect transistor with a buried quasi-two-dimensional electron gas created by the self-assembled Sn-nanothreads (Sn-NTs) embedded into the GaAs channel. This GaAs–Sn-NTs detector efficiently detects a sub-THz radiation at cryogenic and room temperatures (CT and RT, respectively). Two possible detection mechanisms are the bolometric mechanism due to electron heating by the sub-THz radiation and the mechanism related to the rectification of the decayed plasmonic oscillations. We developed a classical self-consistent device model of the bolometric detection involving the Poisson equation and the electron density of states and estimated responsivity and noise-equivalent power of the detector. The measured I–V characteristics and the photoresponse to the incident sub-THz radiation at CT and RT are in reasonable agreement with our model. The detector demonstrates a better performance than semiconductor-based hot-electron bolometers and quantum-well/dot IR and THz photodetectors. [ABSTRACT FROM AUTHOR]

In this paper, we report on an approach for shaping the spectra of THz pulse generation in photoconductive antennas (PCAs) by frequency-dependent impedance modulation. We introduce a theoretical model describing the THz pulse generation in PCAs, and accounting for impedances of the photoconductor and of the antenna. Additionally we account a detector response for comparative analysis with experimental data. In order to showcase an impact of frequency-dependent impedance modulation on the spectra of THz pulse generation, we applied this model to simulating broadband PCAs with log-spiral topology. Finally, we fabricated two different log-spiral PCAs and characterized them experimentally using the THz pulsed spectroscopy. The observed results demonstrate agreement between the theoretical model and experiment, justifying the potential of shaping the spectra of THz pulse generation in PCAs by modulation of frequency-dependent impedances. This approach makes it possible to optimize PCA performance and thus accommodes the needs of THz pulsed spectroscopy and imaging in fundamental and applied branches of THz science and technology. [ABSTRACT FROM AUTHOR]

We report on the proposal and the theoretical and experimental studies of the terahertz hot-electron bolometer (THz HEB) based on a gated GaAs structure like the field-effect transistor with the array of parallel Sn nanothreads (Sn-NTs). The operation of the HEB is associated with an increase in the density of the delocalized electrons due to their heating by the incoming THz radiation. The quantum and the classical device models were developed, the quantum one was based on the self-consistent solution of the Poisson and Schrödinger equations, the classical model involved the Poisson equation and density of states omitting quantization. We calculated the electron energy distributions in the channels formed around the Sn-NTs for different gate voltages and found the fraction of the delocalized electrons propagating across the energy barriers between the NTs. Since the fraction of the delocalized electrons strongly depends on the average electron energy (effective temperature), the proposed THz HEB can exhibit an elevated responsivity compared with the HEBs based on more standard heterostructures. Due to a substantial anisotropy of the device structure, the THz HEB may demonstrate a noticeable polarization selectivity of the response to the in-plane polarized THz radiation. The features of the THz HEB might be useful in their practical applications in biology, medicine and material science. [ABSTRACT FROM AUTHOR]