1. Influence of the growth rate during Nb film pulsed laser deposition on the sapphire R-plane.
- Author
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Malikov, I.V.
- Subjects
- *
PULSED laser deposition , *ULTRAHIGH vacuum , *GAUSSIAN distribution , *GAUSSIAN sums , *X-ray diffraction - Abstract
Optimal conditions for obtaining high quality epitaxial Nb thin films on the monocrystalline sapphire R-plane by pulsed laser deposition in ultrahigh vacuum have been determined. The ratio of room temperature resistance to the residual resistance (RRR) on the substrate temperature has the maximum at about 630 °C. The RRR dependence on the growth rate has the maximum at growth rates of 3–6 nm/min. In epitaxial Nb films, there is a simultaneous increase in the value of RRR and growth misorientation of Nb(001) relatively sapphire R-plane. At the maximum value of RRR, the shapes of Nb X-ray diffraction (XRD) peaks (002) and (011) are symmetrical and close to the Gaussian distribution; at lower RRR values, the shapes of XRD peaks become asymmetrical and cannot be approximated by a single Gaussian distribution, and their shape can be described by the sum of several Gaussian functions. For all obtained films, full width at half maximum (FWHM) of Nb (002) and Nb (011) peaks are 0.2o and 0.4о, respectively. FWHM of Nb (002) rocking curves is 0.4o. • Epitaxial Nb films on the sapphire R-plane with the highest RRR values were obtained. • The comparison of the obtained RRR values with the literature data was carried out. • RRR values correlate with the tilt of the growth plane of Nb film. • RRR values correlate with the shapes of Nb X-ray diffraction peaks (002) and (011). [ABSTRACT FROM AUTHOR]
- Published
- 2025
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