1. Structural and compositional complexity of nitrogen implantation in silicon carbide
- Author
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Suvorova, Alexandra A., Rubanov, Sergey, and Suvorov, Alexander V.
- Subjects
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ION implantation , *SILICON carbide , *ANNEALING of crystals , *TRANSMISSION electron microscopy , *RAMAN spectroscopy , *NITROGEN - Abstract
Abstract: We present a study of the nitrogen-implanted SiC, with the focus being to understand the structure and composition of the implanted region and its evolution with annealing. The implantation region was probed as a function of implant and annealing conditions using a combination of transmission electron microscopy (TEM) based imaging and spectroscopy techniques as well as Raman spectroscopy. Raman spectroscopy revealed carbon bands at ∼1600cm−1 and 1370cm−1 and silicon nitride bands at ∼460cm−1 and 790cm−1 for the samples processed at high temperatures. TEM showed that nitrogen ion implantation of the silicon carbide followed by thermal annealing creates complicated nanocomposite structure. Elemental maps obtained using energy-filtered TEM revealed concentration variation across the implanted layer with carbon accumulation observed at the interfaces and the center of the implanted layer. The nitrogen atoms substitution of carbon in SiC and the segregation of implantation-induced carbon atoms are believed to be the reason for the observed structure. [Copyright &y& Elsevier]
- Published
- 2012
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